A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25° C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 55 V
BVCES IC = 200 mA 110 V
BVEBO IE = 20 mA 4.0 V
ICEO VCE = 30 V 10 mA
ICES VCE = 60 V 10 mA
hFE VCE = 6.0 V IC = 10 A 15 80 ---
Cob VCB = 50 V f = 1.0 MHz 320 360 pF
GP
IMD3
C
VCE = 50 V ICQ = 150 mA f = 30 MHz
POUT = 250 W (PEP)
14.5
37
-30 dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
TH430
DESCRIPTION:
The ASI TH430 is Designed for SSB
ad VHF communications. This device
utilizes emitter ballasting for improved
ruggedness and reliability.
FEATURES:
PG = 14.5 dB min. at 220 W/30 MHz
IMD = -30 dB max.
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 40 A
VCBO 110 V
VCEO 55 V
VEBO 4.0 V
PDISS 330 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
JC 0.40 °C/W
PACKAGE STYLE 0.550 4L FLG
C
E
E
B
