RHRP1540, RHRP1560 Data Sheet January 2002 15A, 400V - 600V Hyperfast Diodes Features The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics (trr < 35ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. * Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <35ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Avalanche Energy Rated Formerly developmental type TA49061. * Power Switching Circuits Applications * Switching Power Supplies * General Purpose Ordering Information PART NUMBER * Planar Construction PACKAGE BRAND RHRP1540 TO-220AC RHRP1540 RHRP1560 TO-220AC RHRP1560 Packaging NOTE: When ordering, use the entire part number. JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP1540 RHRP1560 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 400 600 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 400 600 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR 400 600 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 140oC) 15 15 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 30 30 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 200 200 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 100 100 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 20 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 -65 to 175 oC (c)2002 Fairchild Semiconductor Corporation RHRP1540, RHRP1560 Rev. B RHRP1540, RHRP1560 Electrical Specifications TC = 25oC, Unless Otherwise Specified RHRP1540 SYMBOL TEST CONDITION RHRP1560 MIN TYP MAX MIN TYP MAX UNITS IF = 15A - - 2.1 - - 2.1 V IF = 15A, TC = 150oC - - 1.7 - - 1.7 V VR = 400V - - 100 - - - A VR = 600V - - - - - 100 A VR = 400V, TC = 150oC - - 500 - - - A VR = 600V, TC = 150oC - - - - - 500 A IF = 1A, dIF/dt = 100A/s - - 35 - - 35 ns IF = 15A, dIF/dt = 100A/s - - 40 - - 40 ns ta IF = 15A, dIF/dt = 100A/s - 20 - - 20 - ns tb IF = 15A, dIF/dt = 100A/s - 15 - - 15 - ns QRR IF = 15A, dIF/dt = 100A/s - 40 - - 40 - nC VR = 10V, IF = 0A - 60 - - 60 - pF 1.5 oC/W VF IR trr CJ RJC - - 1.5 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current . trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse Recovery Change. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse Width. D = Duty Cycle. Typical Performance Curves 1000 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 100 100oC 10 25oC 175oC 1 0.5 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2002 Fairchild Semiconductor Corporation 3 175oC 100 100oC 10 1 0.1 25oC 0.01 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRP1540, RHRP1560 Rev. B RHRP1540, RHRP1560 Typical Performance Curves (Continued) 50 100 40 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) TC = 25oC, dIF/dt = 100A/s trr 30 ta 20 10 tb 0 0.5 1 5 10 TC = 100oC, dIF/dt = 100A/s 80 trr 60 ta 40 tb 20 0 0.5 15 IF(AV) , AVERAGE FORWARD CURRENT (A) TC = 175oC, dIF/dt = 100A/s t, RECOVERY TIMES (ns) 150 125 trr 100 75 tb 50 ta 5 1 15 FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 175 0 0.5 10 IF , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT 25 5 1 IF , FORWARD CURRENT (A) 10 15 15 DC 12 SQ. WAVE 9 6 3 0 100 115 IF , FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT 160 130 145 TC , CASE TEMPERATURE (oC) 175 FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 175 150 125 100 75 50 25 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2002 Fairchild Semiconductor Corporation RHRP1540, RHRP1560 Rev. B RHRP1540, RHRP1560 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRP1540, RHRP1560 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4