©2002 Fairchild Semiconductor Corporation RHRP1540, RHRP1560 Rev. B
RHRP1540, RHRP1560
15A, 400V - 600V Hyperfast Diodes
The RHRP1540 and RHRP1560 are hyperfast diodes with
soft recovery characteristics (t
rr
< 35ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49061.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <35ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP1540 TO-220AC RHRP1540
RHRP1560 TO-220AC RHRP1560
NOTE: When ordering, use the entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRP1540 RHRP1560 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
400 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
400 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
400 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 140
o
C)
15 15 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
30 30 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
200 200 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
100 100 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-65 to 175 -65 to 175
o
C
Data Sheet January 2002
©2002 Fairchild Semiconductor Corporation RHRP1540, RHRP1560 Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION
RHRP1540 RHRP1560
UNITSMIN TYP MAX MIN TYP MAX
V
F
I
F
= 15A - - 2.1 - - 2.1 V
I
F
= 15A, T
C
= 150
o
C - - 1.7 - - 1.7 V
I
R
V
R
= 400V - - 100 - - -
µ
A
V
R
= 600V -----100
µ
A
V
R
= 400V, T
C
= 150
o
C - - 500 - - -
µ
A
V
R
= 600V, T
C
= 150
o
C -----500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s - -35- -35ns
I
F
= 15A, dI
F
/dt = 100A/
µ
s - -40- -40ns
t
a
I
F
= 15A, dI
F
/dt = 100A/
µ
s - 20 - - 20 - ns
t
b
I
F
= 15A, dI
F
/dt = 100A/
µ
s - 15 - - 15 - ns
Q
RR
I
F
= 15A, dI
F
/dt = 100A/
µ
s - 40 - - 40 - nC
C
J
V
R
= 10V, I
F
= 0A -60- -60- pF
R
θ
JC
- - 1.5 - - 1.5
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current .
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse Recovery Change.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
100
0.5
10
00.5 11.5 2 2.5 3
VF, FORWARD VOLTAGE (V)
25oC
175oC
100oC
VR, REVERSE VOLTAGE (V)
0 200 400 600300 500
1000
0.01
0.1
1
10
100
100
25oC
100oC
175oC
IR, REVERSE CURRENT (µA)
RHRP1540, RHRP1560
©2002 Fairchild Semiconductor Corporation RHRP1540, RHRP1560 Rev. B
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
IF, FORWARD CURRENT (A)
0.5
0
20
10
151
30
50
t, RECOVERY TIMES (ns)
10
tb
40
5
trr
ta
TC = 25oC, dIF/dt = 100A/µs
IF, FORWARD CURRENT (A)
0.5
0
40
20
15
1
60
100
t, RECOVERY TIMES (ns)
10
tb
80
5
trr
ta
TC = 100oC, dIF/dt = 100A/µs
IF, FORWARD CURRENT (A)
0.5
0
50
25
151
100
75
t, RECOVERY TIMES (ns)
10
tb
5
ta
125
150
175
trr
TC = 175oC, dIF/dt = 100A/µs
15
3
0
100 115 145 175
160
6
9
12
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
130
DC
SQ. WAVE
VR, REVERSE VOLTAGE (V)
50
25
0
100
0 50 100 150 200
175
CJ, JUNCTION CAPACITANCE (pF)
150
75
125
RHRP1540, RHRP1560
©2002 Fairchild Semiconductor Corporation RHRP1540, RHRP1560 Rev. B
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRP1540, RHRP1560
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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