PD- 91849D IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 9.5 6.0 76 2.5 1.6 0.02 60 12 -55 to + 150 V W/C mJ V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 7/7/99 IRF7233 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -14 -12 --- --- --- -0.6 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -5.0mA --- --- V VGS = 0V, I D = -250A 0.001 --- V/C Reference to 25C, ID = -1mA 0.013 0.020 VGS = -4.5V, I D = -9.5A 0.023 0.033 VGS = -2.5V, I D = -6.0A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -9.5A --- -10 VDS = -12V, VGS = 0V --- -1.0 VDS = -9.6V, VGS = 0V A --- -100 VDS = -12V, VGS = 0V, TJ = 70C --- -100 nA VGS = -12V --- 100 VGS = 12V 49 74 ID = -9.5A 9.3 14 nC VDS = -10V 22 32 VGS = -5.0V 26 --- VDD = -10V 540 --- ID = -9.5A ns 77 --- RD = 1.0 370 --- RG = 6.2 4530 6000 VGS = 0V 2400 --- pF VDS = -10V 2220 --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- -2.5 --- --- -76 --- --- --- --- 43 35 -1.2 65 52 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. 2 When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 1.3mH RG = 25, IAS = 9.5A. www.irf.com IRF7233 100 100 VG S - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BO TTO M - 1.5V VG S - 7 .5 V - 5 .0 V - 4 .0 V - 3 .5 V - 3 .0 V - 2 .5 V - 2 .0 V B O TT O M - 1 .5 V TO P 80 -ID , D ra in-to-S o urce C urre nt (A ) -I D , Drain-to-S ource C urrent (A ) TOP 60 40 20 -1.5V 0 0 2 4 20s PULSE W IDTH T J = 25C 6 8 A 80 60 40 20 0 10 0 -V D S , D ra in-to-Source V oltage (V) R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , D ra in -to-S ou rc e C urre n t (A ) 2.0 T J = 2 5 C TJ = 1 5 0 C 10 V D S = -1 0 V 2 0 s P U L S E W ID TH 1.5 2.0 2.5 -VG S , G a te -to -S o u rc e V o lta ge (V ) Fig 3. Typical Transfer Characteristics www.irf.com 4 6 8 A 10 Fig 2. Typical Output Characteristics 100 1.0 2 20 s PU L SE W ID TH T J = 1 50C -VD S , D rain-to-Sou rce V oltage (V ) Fig 1. Typical Output Characteristics 1 -1 .5 V 3.0 A I D = -9.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7233 10 V G S = 0V, f = 1kHz C iss = Cg s + C g d , Cd s SH ORTE D C rss = C g d C o ss = C d s + C g d 5000 C iss 4000 3000 C o ss C rss 2000 2 4 6 8 10 8 6 4 2 0 A 0 ID = -9.5A VDS =-10V -VGS, Gate-to-Source Voltage (V) C , C apac it ance (pF ) 6000 0 12 30 40 50 60 70 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -I S D , Rev erse Drain Current (A) 20 QG , Total Gate Charge (nC) -VD S , D rain-to-So urc e Voltage (V) T J = 150C 100 TJ = 25C 10 V G S = 0V 1 0.0 1.0 2.0 -VS D , S ou rce-to-D ra in Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 A 3.0 100us 1ms 10 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7233 10.0 EAS , Single Pulse Avalanche Energy (mJ) 140 -ID , Drain Current (A) 8.0 6.0 4.0 2.0 0.0 25 50 75 100 125 150 ID -4.2A -7.6A BOTTOM -9.5A TOP 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7233 SO-8 Package Details D IM D -B - 5 E -A - 5 A 8 7 6 5 1 2 3 4 e 6X H 0.2 5 (.0 10 ) M A M e1 -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. M IN M AX .0532 .0688 1 .35 1 .75 .0040 .0098 0 .10 0 .25 B .014 .018 0 .36 0 .46 C .0 075 .0 098 0 .19 0.25 D .1 89 .1 96 4 .80 4.98 E .150 .157 3 .81 3 .99 e1 A M IL LIM E T E R S MAX A1 e K x 45 IN C H E S M IN .050 B A S IC 1.2 7 B A S IC .025 B A S IC 0.6 35 B A S IC H .2 284 .2 440 K .011 .019 0 .28 5 .80 0 .48 6.20 L 0 .16 .050 0 .41 1.27 0 8 0 8 R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking 6 www.irf.com IRF7233 Tape and Reel SO-8 T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 7/99 www.irf.com 7