BC846ST/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 May 28 1999 Sep 01

DISCRETE SEMICONDUCTORS

BC846S

NPN general purpose double

transistor

ndbook, halfpage

MBD128

1999 Sep 01 2

NXP Semiconductors Product data sheet

NPN general purpose double transistor BC846S

FEATURES

•Two transistors in one package

•Reduces number of components and board spa ce

•No mutual interference between the transistors.

APPLICATIONS

•General purpose s witc hing and small signal

amplification.

DESCRIPTION

NPN double transistor in an SC-88 (SOT363) plastic six

lead package.

PINNING

MARKING

PIN DESCRIPTION

1, 4 emitter TR1; TR2

2, 5 base TR1; TR2

6, 3 collector TR1; TR2

TYPE NUMBER MARKING CODE

BC846S 4Ft

Fig.1 Simplified outline (SC- 88) and symbol.

handbook, halfpage

132

Top view

MAM340

132

TR1 TR2

LIMITING VALUES

In accordance with the A b solute Maxi m um Rating Syst em (IEC 134).

Note

1. Refer to SC-88 (SOT363) standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

VCBO collector-base volta ge open emitter −80 V

VCEO collector-emitter voltage open base −65 V

VEBO emitter-base voltage open collector −6 V

ICcollector current (DC) −100 mA

Ptot total power dissipation Tamb ≤ 25 °C−200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW

1999 Sep 01 3

NXP Semiconductors Pr oduct data shee t

NPN general purpose double transistor BC846S

THERMAL CHARACTE RISTICS

Note

1. Refer to SC-88 (SOT363) standard mounting conditions.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 416 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor

ICBO collector cut-off current IE = 0; VCB = 30 V −−15 nA

IE = 0; VCB = 30 V; Tj = 150 °C−−5μA

IEBO emitter cut-off current IC = 0; VEB = 5 V −−100 nA

hFE DC current gain IC = 2 mA; VCE = 5 V 110 − −

VCEsat collector-emitter saturation

voltage IC = 10 mA; IB = 0.5 mA −−100 mV

IC = 100 mA; IB = 5 mA; note 1 −−300 mV

VBEsat base-emitt er saturation

voltage IC = 10 mA; IB = 0.5 mA −770 −mV

Cccollector capa citance IE = ie = 0; VCB = 10 V; f = 1 MHz −−1.5 pF

fTtransition frequenc y IC = 10 mA; VCE = 5 V;

f = 100 MHz 100 −−MHz

1999 Sep 01 4

NXP Semiconductors Pr oduct data shee t

NPN general purpose double transistor BC846S

Fig.2 Collector-emitter saturation v oltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

103

102

MGL738

10−11IC (mA)

VCEsat

(mV)

10 102103

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE = 5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

200

1200

400

600

800

1000

MGL739

10−11

VBE

(mV)

IC (mA)

10 102103

(1)

(2)

(3)

handbook, full pagewidth

300

400

100

200

MGL740

10−11

hFE

IC (mA)

10 102103

(1)

(2)

(3)

Fig.4 DC current gain as a function of collector current; typical values.

VCE = 5 V.

(1) Tamb = 150 °C. (2) Tamb = 25 °C.

(3) Tamb = −55 °C.

1999 Sep 01 5

NXP Semiconductors Pr oduct data shee t

NPN general purpose double transistor BC846S

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT363 SC-88

pin 1

index A

detail X

0 1 2 mm

scale

132

Plastic surface mounted package; 6 leads SOT363

UNIT A1

max bpcDEe

HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28

1999 Sep 01 6

NXP Semiconductors Product data sheet

NPN general purpose double transistor BC846S

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s ) described in this do cument may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

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regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document d oes not form part of an y q uot ation or co ntract, is believed to be a ccur ate a nd reliable and may be changed

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 115002/02/pp7 Date of release: 1999 Sep 01 Document orde r number: 9397 750 06102