SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features * * * * * * Low On-Resistance: RDS(ON) SOT-23 Low Gate Threshold Voltage Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 K 0.903 1.10 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 L 0.45 0.61 M 0.085 0.180 a 0 8 Low Input Capacitance A Fast Switching Speed D Low Input/Output Leakage B Available in Lead Free/RoHS Compliant Version (Note 2) G Mechanical Data * * * * * * * * * TOP VIEW C S D E G H Case: SOT-23 K Case Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C J M L Terminal Connections: See Diagram All Dimensions in mm Marking (See Page 2): K7B Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Maximum Ratings @ TA = 25C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS 1.0MW VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS 20 40 V Drain Current Continuous ID 240 mA Pd 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30376 Rev. 4 - 2 1 of 3 www.diodes.com 2N7002E a Diodes Incorporated @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 3/4 V VGS = 0V, ID = 10mA A VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25C @ TC = 125C IDSS 3/4 3/4 1.0 500 IGSS 3/4 3/4 10 nA VGS(th) 1.0 3/4 2.5 V VDS = VGS, ID = 250mA RDS (ON) 3/4 3/4 1.6 2.0 3 4 W VGS = 10V, ID = 250mA VGS = 4.5V, ID = 200mA ID(ON) 0.8 1.0 3/4 A VGS = 10V, VDS = 7.5V gFS 80 3/4 3/4 mS Input Capacitance Ciss 3/4 22 50 pF Output Capacitance Coss 3/4 11 25 pF Reverse Transfer Capacitance Crss 3/4 2.0 5.0 pF Turn-On Delay Time tD(ON) 3/4 7.0 20 ns Turn-Off Delay Time tD(OFF) 3/4 11 20 ns Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 25C On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Ordering Information Notes: VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W (Note 4) Device Packaging Shipping 2N7002E-7 SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above. Example: 2N7002E-7-F. Marking Information K7B YM NEW PRODUCT Electrical Characteristics K7B = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September Date Code Key Year 2003 2004 2005 2006 2007 2008 2009 Code P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30376 Rev. 4 - 2 2 of 3 www.diodes.com 2N7002E 0.6 10V 5.5V 5.0V 0.4 TA = 25C 1.2 TA = 125C 0.8 0.4 0.2 2.1V 0 0 1 3 2 0 5 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 5 RDS(ON), DRAIN-SOURCE-ON-RESISTANCE (W) RDS(ON), - DRAIN-SOURCE-ON-RESISTANCE (W) TA = -55C 1.6 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 2.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 4 3 ID = 250mA 2 ID = 75mA 1 0 0 2 4 6 8 10 0 1 3 2 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 2 Drain Current vs. Gate-Source Voltage 5 4 3 VGS = 4.5V 2 VGS = 10V 1 0 0 0.2 VGS - GATE TO SOURCE VOLTAGE (V) Fig. 3 On Resistance vs. Gate to Source Voltage 0.6 0.4 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 On Resistance vs. Drain Current 5 PD, POWER DISSIPATION (mW) 350 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) NE W PRODUCT 1.0 3 VGS= 4.5V @ 200mA 2 VGS= 10V @ 250mA 1 300 250 200 150 100 50 0 0 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature DS30376 Rev. 4 - 2 3 of 3 www.diodes.com 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 6, Max Power Dissipation vs Ambient Temperature 2N7002E