October 2010 Doc ID 17934 Rev 1 1/8
8
STTH2R02-Y
Automotive ultrafast recovery diode
Features
■very low conduction losses
■negligible switching losses
■low forward and reverse recovery times
■high junction temperature
■AEC-Q101 qualified
Description
The STTH2R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in SMB, this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection for automotive
applications.
Table 1. Device summary
Symbol Value
IF(AV) 2 A
VRRM 200 V
Tj (max) 175 °C
VF (typ) 0.7 V
trr (typ) 15 ns
KA
SMB
STTH2R02UY
K
A
www.st.com
Characteristics STTH2R02-Y
2/8 Doc ID 17934 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.06 IF2(RMS)
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz 60 A
IF(RMS) Forward rms current 60 A
IF(AV) Average forward current, δ = 0.5 Tc = 90 °C 2 A
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Tstg Storage temperature range -65 to +175 °C
TjOperating junction temperature range -40 to +175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
Rth(j-c) Junction to case 30 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
IR(1)
1. Pulse test: tp = 5 ms, δ < 2 %
Reverse leakage current Tj = 25 °C VR = VRRM
--3
µA
Tj = 125 °C - 2 20
VF(2)
2. Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
Tj = 25 °C IF = 6 A - - 1.20
V
Tj = 25 °C
IF = 2 A
- 0.89 1.0
Tj = 100 °C - 0.76 0.85
Tj = 150 °C - 0.70 0.80
STTH2R02-Y Characteristics
Doc ID 17934 Rev 1 3/8
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
trr Reverse recovery time
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C -2330
ns
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C -1520
IRM Reverse recovery current IF = 2 A, dIF/dt = -200 A/µs,
VR = 160 V, Tj = 125 °C -34A
tfr Forward recovery time IF = 2 A, dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C -40- ns
VFP Forward recovery voltage IF = 2 A, dIF/dt = 100 A/µs,
Tj = 25 °C -2.0- V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
I
M
(A)
0
20
40
60
80
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
d
=tp/T tp
I
M
T
δ
=tp/T tp
I
M
P = 2 WP = 2 W P = 1 WP = 1 W
P = 5 WP = 5 W
δ
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
I
FM
(A)
Tj=25°C
Tj=150°C
VFM(V)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
I
FM
(A)
Tj=25°C
Tj=150°C
V
FM
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMA
S
cu
=1cm²
t
P
(ms)
Characteristics STTH2R02-Y
4/8 Doc ID 17934 Rev 1
Figure 5. Junction capacitance versus
reverse applied voltage
(typical values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
1
10
100
1 10 100 1000
C
(pF)
F=1MHz
Vosc=30mVRMS
Tj=25°C
VR(V)
0
10
20
30
40
50
60
10 100 1000
Q
RR
(nC)
IF=2A
VR=160V
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
Figure 7. Reverse recovery time versus dIF/dt
(typical values)
Figure 8. Peak reverse recovery current
versus dIF/dt (typical values)
0
10
20
30
40
50
60
10 100 1000
t
RR
(ns)
I
F
=2A
V
R
=160V
T
j
=125°C
T
j
=25°C
dIF/dt(A/µs)
0
1
2
3
4
5
6
10 100 1000
I
RM
(A)
IF=2A
VR=160V
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
Figure 9. Dynamic parameters versus
junction temperature
Figure 10. Thermal resistance, junction to
ambient, versus copper surface
under each lead
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
;I
RM
[T
j
]/Q
RR
;I
RM
[T
j
=125°C]
IRM
QRR
IF=2A
VR=160V
Tj(°C)
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
S
CU
(cm²)
Epoxy printed circuit board,
copper thickness = 35 µm
STTH2R02-Y Ordering information scheme
Doc ID 17934 Rev 1 5/8
2 Ordering information scheme
Figure 11. Ordering information scheme
STTH 2 R 02 XX
Ultrafast switching diode
Average forward current
2 = 2 A
02 = 200 V
U = SMB in tape and reel
Y = Automotive grade
Model R
Package
Repetitive peak reverse voltage
Package information STTH2R02-Y
6/8 Doc ID 17934 Rev 1
3 Package information
●Epoxy meets UL94, V0
●Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 12. SMB footprint (dimensions in mm)
Table 6. SMB dimensions
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A1 1.90 2.15 2.45 0.075 0.085 0.096
A2 0.05 0.15 0.20 0.002 0.006 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.40 5.60 0.201 0.213 0.220
E1 4.05 4.30 4.60 0.159 0.169 0.181
D 3.30 3.60 3.95 0.130 0.142 0.156
L 0.75 1.15 1.60 0.030 0.045 0.063
D
E
E1
cA1
A2 b
L
2.22
1.751.751.75
5.25
STTH2R02-Y Ordering information
Doc ID 17934 Rev 1 7/8
4 Ordering information
5 Revision history
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
STTH2R02UY R2UY SMB 0.12 g 2500 Tape and reel
Table 8. Document revision history
Date Revision Changes
20-Oct-2010 1 Initial release.
STTH2R02-Y
8/8 Doc ID 17934 Rev 1
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