MRE Products 440 Commerce Drive ; Microsemi : aNeeaa Montgomeryville, PA 18936. "Erm Tel: (215) 631-9840 2N5642/2N5643 RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS a FREQUENCY 1FSMME VOLTAGE 28 a HIGH POWER OUT PRO 40W HIGH POWER GAIN EFFICIENCY a CLASS C TRANSISTORS } COMMON EMITTER 6386 Narrow 4L5TUD 366: 4LSTUG (Mi04) (M135) epoxy sealed epoxy sealed ORDER CODE BRANDING apiged ens BR1222-10 BNSG42 Spigea aN56a3 DESCRIPTION PIN CONNECTION These devices..are. epitaxial silicon NFN-planat . irangislors designed primarily fer 12.5V AM class & | RF amplifiers junctionalin the aviation band t18- | Li 136MHz and for 28V FM class AF amplifiers uti- LX ono 7 lized in ground station rangmilters. These devices oe &{ : 7 PT Lilize ballasted emitler resistors and improved me- N i Lath dewd al iallizalion systems ta-achieve optimum load mis: j | inateh capability. | Device Package ~ . 2N5641 B80 Narrow 4LSTUD SRE oNnsede BBO ALSTUD 1 collector 3 base PNSBA3 80 aL STHO 2 amitter SeareRer ABSOLUTE MAXIMUM RATINGS (7 cose & 25C) 2NG642 Catlector to Base ae Collector te Emitter to Base Continuous Collects 1 duinetion T +86 2N5641 eN5642 25643 Ringo] dunction-case Thermal Resistance WF 5.8 2g SAW. Marsh 1aa8 VS2N5641/2N5642/2N5643 ELECTRICAL CHARACTERISTICS (Tense = 25C) STATIC QN5642 Ns6d2 2NS643 Symbol Test Conditions Min, [Typ.|Max. Min. | Typ. Max.| Min. [Typ. Max. Balt | i bebina Vol} SE ere lg = 2DOmA tae O ia) a5 38 A le =o tee) 4. ile = SA ot a foes Veg = 30 tee 4 4 4 mA fre Voge BY ioe BDGMA S jit stormed} 5 (tee Slon8: OYNAMIC ' oneeat | ONsed2 2NS6a3 Symbol Test Conditions Min. Typ.) Max. | Ming) Typo Meo Min. Typ. | Man, Unit Ba Faw TY OMAZ Vee = ZBY z #0 4a We Class 6 By | Fe fT 7SMHe Vee BBV Ba az re as Claas oy the Foe 1 PSMHs Vion = 28V ao 8G AD oh Class <2 1 Cog | Veo. dov hee Q 18 a5 85 pe Fos MMe APPLICATION INFORMATION typical cur VES} ens64) i4 Be aa is dt . ve She <4 a = 8 2 % 5 SIS MBs o 4 2k 4 a4 ab BOWER IN WATES) Power Qutputws Power ine@ut SRENSONT-Le 25 IMPEDANCE DATA itypical) NETWORK IMPEDANCE AT TRANSISTOR TERMINALS f= 178MHz, Voo = 26 Pr Pour input Qutput Watts Watts Ohms Ohms G2 58 1815 ~]1 95 [29 98. jeg 6H oa g.08 24 1.87 |220G ~ (2o 50 68 1419 128d 1-48 [S180 jag 08. 42.87 240 jb 26 (18.65 = (80382N5641/2N5642/2N5643 APPLICATION INFORMATION typical IMPEDANCE DATA (typical) (cantinuad) curves} (continued) 2nsoaz NETWORK IMPEDANCE AT TRANSISTOR 3 TERMINALS NY < fo T7SMHz, Veo = aay E 5 Pig Pour leput Output E20 Waits Watts Ohms Ohms x a 10 13 | TAS G88 (ode ae x sj mA? Be oe a Y 2 oR rl wae 5 2.0 849 1.07 4/190 9.42 ~ 1237 10 ~ 3.0 317 Pii2seihi8 | 00-] $50 Vora any 4.0 aa 430 4 ]re6 | 8 92.) RDS 4 z 3 POWER IM UVAT ES Power Chitnot vs. Power taput SSGSMeat 2N5643 a6 bal NETWORK IMPEDANCE AT TRANSISTOR & TERMINALS 70 = x t= 175MNz, Voom 2BY a be Puy Pour input Output eC @ i Watts Waits Ohms Ohing = & 20 28.5 BS 4D Ges FP OR 3 Be 40 430 11.02 1.08) 4.48 ~ 8.40 & Pout ATSW ae : B 35 INPUTONLYS = 69 52.0 100+ ao] S28 ~ 6s 3 BO BOS (1054.35) 545-1412 18 fo Veg BBY Z a 4 8 & F POWER IN (WATTS) Power Output vs Power input SAGAINERAA AY 882N5641/2N5642/2N5643 PACKAGE MECHANICAL DATA 380 NARROW 4LSTUD Pe fot 4 A { i 4 r | + ESBONGES 2-23. Minimum Maximum Minimum Maxinuum Inches inches inches inches A 1.000 H 20 4330) 8 ean 23d { ARQ 490 o bes Das if ah ie O75 K OG 430 E 155 wis) I, Ba rE OOF OOF M 49) 400 & .df0 386 #02N564 1/2N5642/2N5643 PACKAGE MECHANICAL DATA (continued) 80 4b STUD i a E ry B f i % 8-92. PRE 2A "x i % SARC. Minimum Maxon Minimum Maxim inches inches inches inches & SHO i] 90 400 i 220 ao H eo A CG B70 S85 f 489 450 Q ers d 86 E 455 478 K G0 30 F 04 07 =f 3