Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N6520 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation PCM : 0.625 2. BASE W (Tamb=25) Collector current ICM : -0.5 A Collector-base voltage V V(BR)CBO : -350 Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN TYP MAX UNIT Ic= -100 A , IE=0 -350 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO * IC= -1 mA , IB=0 -350 V Emitter-base breakdown voltage V(BR)EBO IE= -10 A, IC=0 -5 V Collector cut-off current ICBO VCB= -250 V , IE=0 -0.05 A Emitter cut-off current IEBO VEB= -4 V , IC=0 -0.05 A DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE(on) Transition frequency fT * VCE=-10 V, IC= -1 mA VCE=-10 V, IC= -10 mA VCE=-10 V, IC= -30 mA VCE=-10 V, IC= -50 mA VCE=-10 V, IC= -100 mA IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA IC= -50 mA, IB= -5 mA IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA 20 30 30 20 15 -0.3 -0.35 -0.5 -1 -0.75 -0.85 -0.9 VCE=-10V, IC= -100 mA VCE=-20 V, IC= -10 mA * Pulse test, Pulse width300s, Duty cycle2%. f =20 MHz 200 200 40 V V -2 V 200 MHz