BP104, BP104S
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 1Document Number: 81500
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BP104 is a PIN photodiode with high speed and high radiant
sensitivity in miniature, flat, top view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
BP104S is packed in tubes, specifications like BP104.
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
948386_1
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
BP104 45 ± 65 870 to 1050
BP104S 45 ± 65 870 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BP104 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view
BP104S Tube MOQ: 1800 pcs, 45 pcs/tube Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 3 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
BP104, BP104S
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 2Document Number: 81500
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR= 0 V, f = 1 MHz, E = 0 CD70 pF
VR= 3 V, f = 1 MHz, E = 0 CD25 40 pF
Open circuit Voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik38 μA
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 40 45 μA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp950 nm
Range of spectral bandwidth λ0.5 870 to 1050 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
0.01 0.1 1
0.1
1
10
100
1000
I - Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm²)
10
94 8414
V
R
= 5 V
= 950 nm
λ
0.1 1 10
1
10
100
VR- Reverse Voltage (V)
100
94 8415
I - Reverse Light Current (µA)
ra
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
= 950 nm
λ
BP104, BP104S
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 3Document Number: 81500
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1 100
110
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S (λ)rel - Relative Spectral Sensitivity
λ - Wavelength (nm)
1150
94 8408
1.0
0.4 0.2 0
Srel - Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
BP104, BP104S
www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 4Document Number: 81500
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
TUBE PACKAGING DIMENSIONS in millimeters
Fig. 8 - Drawing Proportions not scaled
96 12186
18800
Stopper
10.7
9.5
214.5
Quantity per tube: 45 pcs
Quantity per box: 1800 pcs
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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