FGI 2SD882/2SD882S NPN Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING e Complement to 2SB772 TO-126 (ABSOLUTE MAXIMUM RATINGS (Ta = 25 tc) ) Characteristic Symbol | Rating | Unit Collector-Base Voltage Veso 40 v Collector-Emitter Voltage Veto 30 Vv Emitter-Bias Voltage VeBo 5 Vv Collector Current (DC) Ik 3 A *Collector Current (Pulse) Ie 7 A Base Current (DC) Ig 0.6 A Collector Dissipation (Ta=25c ) Po - 10 Ww Collector Dissipation (Ta=25 ) Pe 1 Ww Junction Temperature Tj 150 c Storage Temperature Tste 55-150 1.Emitter 2.Collector 3.Base PW<=10ms,Duty Cycle = 50% {ELECTRICAL CHARACTERISTICS(Ta=25 } } Characteristics Symbol Test condition Min Typ Min Unit Collector Cutoff Current Topo Vop=30V,15=0 1 wA Emitter Cutoff Current Taso Vep=3 V,Ic=0 1 pA *DC Current Gain hes) Voe=2V,1=20mA 30 150 : rea Veg2V I 1A 60 160 400 *Collector Emitter Saturation Voltage Veesat) | 1c=2A,Ip=0.2A 0.3 0.5 v *Base Emitter Saturation Voltage Vegsat) | Ic=2A,Ip=0.2A 1.0 2.0 v Current Gain Bandwidth Product fr Vee=5V,1=0.1A 90 MHz Output Capacitance Cob Vop=10V,Ip=0 45 pF f=1MHz Pulse Test PW<350, s,Duty Cycle = 2% hrz(2) CLASSIFICATION Classification R oO. Y G hre(2) 60-120 100-200 160-320 200-400 8-7FCI 2SD882/2SD882S NPN Epitaxial Silicon Transistor Semiconductor 20 STATIC CHARACTERISTIC DC CURRENT GAIN . 1 = 500 z IB=10mA Z 300 fi 1.6 B= 10r =z & Ip=9mA o > Ip=8mA 5 1 2 12 IB=7mA id ce =6mA z 50 e Ip =5mA Rg a 0.8 In =4mA oO = QQ 10 oO B=3mA oO 04 5 2 IB=2mA & 0 Bel Q 4 8 12 16 20 1 1 3510 50 100 300 1000 300010000 Ic (mA).COLLECTOR CURRENT CURRENT GAIN-BANDWIDTH PRODUCT Vee .COLLECTOREMITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE : 1 : < 3 500 s 300 Si z Ee << 800 =, Pp 300 3 5 = 50 3 S 30 E 30 & . Qa , z 10 Es s > 3 3 Bo 1 F 13.5 10 30 100300 1000 5000 1 3 5 10 3050100 3005001000 > Ic(mA).COLLECTOR CURRENT Vecp{V). COLLECTOR-BASE VOLTAGE COLLECTOR OUTPUT CAPACITANCE SAFE OPERATING AREAS - 10 500 5 300 3 - 50 30 2 Ic (A).COLLECTOR CURRENT 2 0.0 0.1 60.030.050.1 0305 41 3.5 10 1 3.5 10 380 50 100 300 500 1000 Ic (A).COLLECTOR CURRENT Vcr (V). COLLECTOR-BASE VOLTAGE ft (Miz). CURRENT GAIN BANDWIDTH PRODUCTFCI 2SD882/2SD882S NPN Epitaxial Silicon Transistor Semiconductor DERATING CURVE OF SAFE OPERATING POWER DERATING AREAS 160 16 140 z 14 S & 2 120 = 12 e < 100 B 10 5 80 Oo 8 oe S60 = 6 a > = 40 & 4 o S 20 2 2 0 0 0 50 100 150 =. 200 0 50 100 150 200 Te(c)CASE TEMPERATURE Te(c)CASE TEMPERATURE