
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSP2222A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as and PN2222A
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 600 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC=10µA, IE=0 75 V
BVCEO Collector Emitter Breakdown Voltage IC=10mA, IB=0 40 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=60V, IE=0 0.01 µA
IEBO Emitter Cut-off Current VEB=3V, IC=0 10 nA
hFE DC Current Gain IC=0.1mA, VCE=10V
VCE=10V, IC=1mA
VCE=10V, IC=10m A
VCE=10V, *IC=150m A
VCE=10V, *IC=500mA
35
50
75
100
40 300
VCE (sat) * Collector-Emitter Saturation V oltage IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.3
1V
V
VBE (sat) * Base-Emitter Saturation Voltage IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.6 1.2
2V
V
fTCurrent Gain Bandwidth Product VCE=20V, IC=20mA
f=100MHz 300 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
tON Turn On Time VCC=30V, IC=150mA
IB1=15mA, VBE(off)=0.5V 35 ns
tOFF Turn Off Time VCC=30V, IC=150mA
IB1=IB2=15mA 285 ns
NF Noise Figure IC=100µA, VCE=10V
RS=IKΩ, f=1KHz 4dB
KSP2222A
General Purpose Transistor
• Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Refer KSP2222 for graphs
1. Emitter 2. Base 3. Collector
TO-92
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