FGH40N60SMDF_F085 - ON SEMICONDUCTOR

January, 2020 − Rev. 3

1Publication Order Number:

FGH40N60SMDF−F085/D

IGBT - Field Stop

600 V, 40 A

FGH40N60SMDF-F085

Description

Using Novel Field Stop IGBT Technology, ON Semiconductor new

series of Field Stop IGBTs offer the optimum performance

for Automotive Chargers, Inverter, and other applications where low

conduction and switching losses are essential.

Features

•Max Junction Temperature TJ = 175°C

•Positive Temperature Co−efficient for Easy Parallel Operating

•High Current Capability

•Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 40 A

•High Input Impedance

•Fast Switching : EOFF = 6.25 uJ/A

•Tighten Parameter Distribution

•Qualified to Automotive Requirements of AEC−Q101

•This Device is Pb−Free and is RoHS Compliant

Applications

•Automotive Chargers, Converters, High Voltage Auxiliaries

•Inverters, PFC, UPS

TO−247−3LD

CASE 340CK

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

www.onsemi.com

VCES IC

600 V 40 A

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FGH40N60SMDF = Specific Device Code

COLLECTOR

(FLANGE)

$Y&Z&3&K

FGH40N60

SMDF

FGH40N60SMDF−F085

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ABSOLUTE MAXIMUM RATINGS

Symbol Description Ratings Unit

VCES Collector to Emitter Voltage 600 V

VGES Gate to Emitter Voltage ±20 V

ICCollector Current TC = 25°C 80 A

TC = 100°C 40 A

ICM (Note 1) Pulsed Collector Current TC = 25°C 120 A

PDMaximum Power Dissipation TC = 25°C 349 W

TC = 100°C 174 W

TJOperating Junction Temperature −55 to +175 °C

TSTG Storage Temperature Range −55 to +175 °C

TLMaximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: Pulse width limited by max. junction temperature.

THERMAL CHARACTERISTICS

Symbol Parameter Typ. Unit

RqJC (IGBT) Thermal Resistance, Junction to Case 0.43 _C/W

RqJC (Diode) Thermal Resistance, Junction to Case 1.45 _C/W

RqJA Thermal Resistance, Junction to Ambient 40 _C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package

Packing

Method Reel Size Tape Width Qty per Tube

FGH40N60SMDF−F085 FGH40N60SMDF TO−247 Tube N/A N/A 30

FGH40N60SMDF−F085

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ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 mA600 − − V

DBVCES / DTJTemperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 mA−0.6 −V/°C

ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA

IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA

ON CHARACTERISTICS

VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE 3.5 4.8 6.0 V

VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, −1.7 2.5 V

IC = 40 A, VGE = 15 V,

TC = 150°C−2.0 −V

DYNAMIC CHARACTERISTICS

Cies Input Capacitance VCE = 30 V, VGE = 0 V,

f = 1 MHz

−1840 −pF

Coes Output Capacitance −180 −pF

Cres Reverse Transfer Capacitance −50 −pF

SWITCHING CHARACTERISTICS

Td(on) Turn−On Delay Time VCC = 400 V, IC = 40 A,

RG = 6 W, VGE = 15 V,

Inductive Load, TC = 25°C

−18 −ns

TrRise Time −22 −ns

Td(off) Turn−Off Delay Time −110 −ns

TfFall Time −11 20 ns

Eon Turn−On Switching Loss −1.3 −mJ

Eoff Turn−Off Switching Loss −0.25 −mJ

Ets Total Switching Loss −1.55 −mJ

Td(on) Turn−On Delay Time VCC = 400 V, IC = 40 A,

RG = 6 W, VGE = 15 V,

Inductive Load, TC = 125°C

−18 −ns

TrRise Time −32 −ns

Td(off) Turn−Off Delay Time −112 −ns

TfFall Time −11 20 ns

Eon Turn−On Switching Loss −2.05 −mJ

Eoff Turn−Off Switching Loss −0.48 −mJ

Ets Total Switching Loss −2.53 −mJ

QgTotal Gate Charge VCE = 400 V, IC = 40 A,

VGE = 15 V

−122 −nC

Qge Gate to Emitter Charge −11 −nC

Qgc Gate to Collector Charge −59 −nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

FGH40N60SMDF−F085

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ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

VFM Diode Forward Voltage IF = 20 A TC = 25°C−1.3 1.7 V

TC = 150°C−1.2 −

Trr Diode Reverse Recovery Time IF = 20 A,

dIF/dt = 200 A/ms

TC = 25°C−57 90 ns

TC = 125°C−130 −

Qrr Diode Reverse Recovery Charge TC = 25°C−164 290 nC

TC = 125°C−718 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

FGH40N60SMDF−F085

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation

Voltage Characteristics Figure 4. Transfer Characteristics

Figure 5. Saturation Voltage vs. Case

Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE

Collector−Emitter Voltage, VCE (V)

Collector Current, IC (A)

Collector−Emitter Voltage, VCE (V)

Collector Current, IC (A)

Collector−Emitter Voltage, VCE (V)

Collector Current, IC (A)

Gate−Emitter Voltage,VGE (V)

Collector Current, IC (A)

Collector−Emitter Case Temperature Voltage, TC (5C)

Collector−Emitter Voltage, VCE (V)

Gate−Emitter Voltage, VGE (V)

Collector−Emitter Voltage, VCE (V)

0.0 1.5 3.0 4.5 6.0

120

20V 15V

12V

10V

VGE = 8V

0.0 1.5 3.0 4.5 6.0

20V

15V

12V

10V VGE = 8V

120

12340

TC = 25°CTC = 125°C

Common Emitter

VCE = 20 V

TC = 25°C

TC = 125°C

246 801012

25 50 75 100 125 150

1.0

1.5

2.0

2.5

3.0

80A

40A

IC = 20A

Common Emitter

VGE = 15 V

TC = 25°C

TC = 125°C

Common Emitter

VGE = 15 V

IC = 20A

40A 80A

Common Emitter

TC = −40°C

4 8 12 16020

120

FGH40N60SMDF−F085

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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

048121620

IC = 20A

40A

80A

048121620

IC = 20A

40A

80A

048121620

IC = 20A

40A

80A

Figure 7. Saturation Voltage vs VGE Figure 8. Saturation Voltage vs VGE

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics

vs. Gate Resistance

Gate−Emitter Voltage, VCE (V)

Collector−Emitter Voltage, VCE (V)

Gate−Emitter Voltage, VGE(V)

Collector−Emitter Voltage, VCE (V)

Capacitance (pF)

Gate Charge, Qg(nC)

Gate−Emitter Voltage, VGE (V)

Collector Current, IC (A)

Gate Resistance, RG (W)

Switching Time (ns)

Collector−Emitter Voltage, VCE (V)

80A

IC = 20A

40A

048121620

Common Emitter

TC = 25°C

Common Emitter

TC = 125°C

11 0

1000

2000

3000

4000

Cres

Coes

Cies

Common Emitter

VGE = 0 V, f = 1 MHz

TC = 25°C

300V

200V

VCC = 100V

0 306090120

1 10 100 1000

0.01

0.1

100

400

1ms

10 ms

100

Common Emitter

TC = 25°C

*Notes: Single Nonrepetitive

Pulse TC = 25°C

Curves must be derated linearly

with increase in temperature

100

td(on)

Common Emitter

VCC = 400 V

VGE = 15 V

IC = 40 A

TC = 25°C

TC = 125°C

0 1020304050

FGH40N60SMDF−F085

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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 13. Turn−off Characteristics

vs. Gate Resistance

Figure 14. Turn−on Characteristics

vs. Collector Current

Figure 15. Turn−off Characteristics vs.

Collector Current

Figure 16. Switching Loss vs.

Gate Resistance

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics

Switching Time (ns)

Gate Resistance, RG (W)

Switching Time (ns)

Collector Current, IC (A)

Switching Time (ns)

Collector Current, IC (A)

Switching Loss (mJ)

Gate Resistance, RG (W)

Switching Loss (mJ)

Collector Current, IC (A)

Collector−Emitter Voltage, VCE (V)

0 1020304050

100

1000

td(off)

Common Emitter

VCC = 400 V

VGE = 15 V

IC = 40 A

TC = 25°C

TC = 125°C

20 30 40 50 60 70 80

100

1000

td(on)

Common Emitter

VGE = 15 V, RG = 6 W

TC = 25°C

TC = 125°C

20 40 60 80

100

1000

td(off)

Common Emitter

VGE = 15 V, RG = 6 W

TC = 25°C

TC = 125°C

0 1020304050

0.1

Eon

Eoff

Common Emitter

VCC = 400 V

VGE = 15 V

IC = 40 A

TC = 25°C

TC = 125°C

20 30 40 50 60 70 80

0.1

Eon

Eoff

20 Common Emitter

VGE = 15 V, RG = 6 W

TC = 25°C

TC = 125°C

1 10 100 1000

200

Safe Operating Area

VGE = 15 V, TC = 125°C

100

FGH40N60SMDF−F085

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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 19. Forward Characteristics Figure 20. Reverse Current

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

Forward Current, IF (A)

Forward Voltage, VF (V)

Reverse Current, IR (uA)

Reverse Voltage, VR (V)

Thermal Response (Zthjc)

Rectangular Pulse Duration (s)

Figure 23. Transient Thermal Impedance of IGBT

Reverse Recovery Time, trr (ns)

Forward Current, IF (A)

Stored Recovery Charge, Qrr (nC)

Forward Current, IF (A)

0.0 0.5 1.0 1.5 2.0 2.5

0.1

100

TJ = 75oC

TJ = 25oC

TJ = 125oC

TC = 25°C

TC = 125°C

TC = 75°C

150 300 450 600

0.01

0.1

100

TJ = 25oC

TJ = 75oC

TJ = 125oC

510152025303540

100

150

200

200A/

di/dt = 100A/

1E−51E−41E−30.010.1 1 10

0.01

0.1

0.01

0.02

0.1

0.05

0.2

single pulse

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

0.5

PDM

200A/

di/dt = 100A/

510152025303540

TO−247−3LD SHORT LEAD

CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

ZZ = Assembly Lot Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

GENERIC

MARKING DIAGRAM*

AYWWZZ

XXXXXXX

(3X) b

(2X) b2

(2X) e

0.25 MBAM

DIM MILLIMETERS

MIN NOM MAX

A 4.58 4.70 4.82

A1 2.20 2.40 2.60

A2 1.40 1.50 1.60

b 1.17 1.26 1.35

b2 1.53 1.65 1.77

b4 2.42 2.54 2.66

c 0.51 0.61 0.71

D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35

E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25

L1 3.69 3.81 3.93

P 3.51 3.58 3.65

P1 6.60 6.80 7.00

Q 5.34 5.46 5.58

S 5.34 5.46 5.58

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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