ON Semiconductor PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * NPN Complement is PZT2222AT1 * The SOT-223 package can be soldered using wave or reflow * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. BASE 1 * Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel. SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 4 1 2 3 3 EMITTER CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc PD 1.5 12 Watts mW/C TJ, Tstg -65 to 150 C RJA 83.3 C/W TL 260 10 C Sec Collector Current Total Power Dissipation @ TA = Derate above 25C 25C(1) Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance -- Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath DEVICE MARKING P2F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -60 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO -60 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) Characteristic OFF CHARACTERISTICS V(BR)EBO -5.0 -- -- Vdc Collector-Base Cutoff Current (VCB = -50 Vdc, IE = 0) ICBO -- -- -10 nAdc Collector-Emitter Cutoff Current (VCE = -30 Vdc, VBE = 0.5 Vdc) ICEX -- -- -50 nAdc Base-Emitter Cutoff Current (VCE = -30 Vdc, VBE = -0.5 Vdc) IBEX -- -- -50 nAdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 5 1 Publication Order Number: PZT2907AT1/D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic ON Min Typ Max 75 100 100 100 50 -- -- -- -- -- -- -- -- 300 -- -- -- -- -- -0.4 -1.6 -- -- -- -- -1.3 -2.6 Unit CHARACTERISTICS(2) DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) hFE Collector-Emitter Saturation Voltages (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltages (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) -- Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) fT 200 -- -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cc -- -- 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Ce -- -- 30 pF ton -- -- 45 ns td -- -- 10 tr -- -- 40 toff -- -- 100 ts -- -- 80 tf -- -- 30 SWITCHING TIMES Turn-On Time 30 Vdc, Vd IC = -150 150 mAdc, Ad (VCC = -30 IB1 = -15 mAdc) Delay Time Rise Time Turn-Off Time (VCC = -6.0 6 0 Vdc, Vd IC = -150 150 mAdc, Ad IB1 = IB2 = -15 mAdc) Storage Time Fall Time ns 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. -30 V INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 200 1.0 k 0 -16 V +15 V TO OSCILLOSCOPE RISE TIME 5.0 ns 0 -30 V 50 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit -6.0 V 1.0 k 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 50 1N916 Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 2 PZT2907AT1 1000 hFE, CURRENT GAIN TJ = 125C TJ = 25C 100 TJ = -55C 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 1000 100 VCE = -20 V TJ = 25C 10 -1.0 Figure 3. DC Current Gain 30 TJ = 25C 20 VBE(sat) @ IC/IB = 10 CAPACITANCE (pF) VOLTAGE (VOLTS) -0.6 -1000 Figure 4. Current Gain Bandwidth Product -1.0 -0.8 -10 -100 IC, COLLECTOR CURRENT (mA) VBE(on) @ VCE = -10 V -0.4 -0.2 Ceb 10 7.0 Ccb 5.0 3.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 2.0 -0.1 -500 Figure 5. "ON" Voltage -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 REVERSE VOLTAGE (VOLTS) Figure 6. Capacitances http://onsemi.com 3 PZT2907AT1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE POWER DISSIPATION the equation for an ambient temperature TA of 25C, one can The power dissipation of the SOT-223 is a function of the calculate the power dissipation of the device which in this pad size. These can vary from the minimum pad size for case is 1.5 watts. soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is 150C - 25C PD = = 1.5 watts determined by TJ(max), the maximum rated junction 83.3C/W temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, The 83.3C/W for the SOT-223 package assumes the TA. Using the values provided on the data sheet for the recommended collector pad area of 965 sq. mils on a glass SOT-223 package, PD can be calculated as follows. epoxy printed circuit board to achieve a power dissipation of 1.5 watts. If space is at a premium, a more realistic approach TJ(max) - TA is to use the device at a PD of 833 mW using the footprint PD = RJA shown. Using a board material such as Thermal Clad, a The values for the equation are found in the maximum power dissipation of 1.6 watts can be achieved using the ratings table on the data sheet. Substituting these values into same footprint. MOUNTING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 http://onsemi.com 4 0.059 1.5 inches mm PZT2907AT1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) H M K STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 5 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 PZT2907AT1 Notes http://onsemi.com 6 PZT2907AT1 Notes http://onsemi.com 7 PZT2907AT1 Thermal Clad is a trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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