PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET(R) Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current RDS(on) max ID 0.18 14A D-Pak IRFR13N15D I-Pak IRFU13N15D Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 14 9.8 56 86 0.57 30 3.8 -55 to + 175 Units A W W/C V V/ns C 300 (1.6mm from case ) Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes through are on page 10 www.irf.com 1 12/9/04 IRFR/U13N15DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.17 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.18 VGS = 10V, ID = 8.3A 5.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.0 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 19 5.5 9.4 8.0 26 12 11 620 130 38 780 62 110 Max. Units Conditions --- S VDS = 50V, ID = 8.3A 29 ID = 8.3A 8.2 nC VDS = 120V 14 VGS = 10V, --- VDD = 75V --- I D = 8.3A ns --- RG = 11 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 130 8.3 8.6 mJ A mJ Typ. Max. Units --- --- --- 1.75 50 110 C/W Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 56 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 8.3A, VGS = 0V --- 110 --- ns TJ = 25C, IF = 8.3A --- 520 --- nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFR/U13N15DPbF 100 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 5.0V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 5.0V 1 0.1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 175 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 5 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 0.1 20s PULSE WIDTH TJ = 175 C 11 ID = 14A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U13N15DPbF 10000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd 1000 Ciss Coss 100 Crss ID = 8.3A VDS = 120V VDS = 75V VDS = 30V 16 12 8 4 10 1 10 100 FOR TEST CIRCUIT SEE FIGURE 13 1000 0 VDS , Drain-to-Source Voltage (V) 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) 100 10 TJ = 25 C 1 10 100us 1ms 1 0.1 0.2 10ms TC = 25 C TJ = 175 C Single Pulse V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 1.4 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U13N15DPbF 14 V DS VGS I D , Drain Current (A) 12 D.U.T. RG 10 RD + -VDD VGS 8 Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 VDS 2 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) IRFR/U13N15DPbF 240 TOP 200 BOTTOM 160 120 80 40 0 25 tp ID 3.4A 5.9A 8.3A 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U13N15DPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFR/U13N15DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IF IER LOGO Note: "P" in ass embly line position indicates "Lead-F ree" IRFU120 916A 12 34 ASS EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 AS S EMBLY LOT CODE 8 34 DAT E CODE P = DESIGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY S IT E CODE www.irf.com IRFR/U13N15DPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMB LY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" INT ERNAT IONAL RECT IF IER LOGO PART NUMBER IRF U120 919A 56 78 AS SEMB LY LOT CODE Note: "P" in assembly line pos ition indicates "Lead-F ree" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56 AS S EMB LY LOT CODE www.irf.com 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMB LY SIT E CODE 9 IRFR/U13N15DPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 3.8mH RG = 25, IAS = 8.3A. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 8.3A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie") . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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