HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 4.9mΩ
ID = 120A
HEXFET® is a registered trademark of International Rectifier.
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
D2P a k 7 P i n
IRF1405ZS-7PPbF
IRF1405ZL-7PPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
TO-263CA 7 Pin
Form Quantity
IRF1405ZS-7PPbF Tube 50 IRF1405ZS-7PPbF EOL notice # 289
IRF1405ZS-7PPbF Tape and Reel Left 800 IRF1405ZSTRL7PP
IRF1405ZL-7PPbF
TO-263CA
Tube
50
IRF1405ZL-7PPbF
EOL notice # 288
NoteBase part number Package Type Standard Pack
D
2
Pak-7Pin
Orderable Part Number
Absolute Maximum Ratings
Parameter Units
I
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package L imited)
I
DM
Pulsed Drain Current
c
P
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
E
AS
(tested) Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
j
––– 0.65
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
i
––– 40
300(1.6mm from case)
°C
A
°C/W
230
1.5
± 20
250
810
See Fig.12a,12b,15,16
-55 to + 175
Max.
150
100
590
120
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C
R
DS(on)
SMD Static Drain-to-Source On-Resistance ––– 3.7 4.9 mΩ
V
GS(t h)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 150 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 150 230
Q
gs
Gate-to-Source Charge ––– 37 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 64 –––
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Ris e Time ––– 140 –––
t
d(off)
Turn-Off Delay Time ––– 170 –––
t
f
Fall Time ––– 130 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 5360 –––
C
oss
Output Capacitance ––– 1310 –––
C
rss
Reverse Transfer Capacitance ––– 340 –––
C
oss
Output Capacitance ––– 6080 –––
C
oss
Output Capacitanc e ––– 920 –––
C
oss
eff. Effective Output Capacitance ––– 1700 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 63 95 ns
Q
rr
Reverse Recovery Charge ––– 160 240 nC
pF
nA
nC
μA
ns
––– ––– 150
––– ––– 590
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 88A
e
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
di/dt = 100A/μs
e
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
d
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 44V
ƒ = 1.0MHz, See Fig. 5
R
G
= 5.0Ω
I
D
= 88A
V
DS
= 25V, I
D
= 88A
V
DD
= 28V
I
D
= 88A
V
GS
= 20V
V
GS
= -20V
V
DS
= 44V
V
GS
= 10V
e
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Solder mounted on IMS substrate.
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 25°C
4.5V
0246810 12
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60μs PULSE WIDTH
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 25 50 75 100 125 150 175 200
ID,Drain-to-Source Current (A)
0
25
50
75
100
125
150
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
300μs PULSE WIDTH
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IRF1405ZS/L-7PPbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 50 100 150 200
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
ID= 88A
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 88A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1707 0.000235
0.1923 0.000791
0.2885 0.008193
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
25
50
75
100
125
150
ID, Drain Current (A)
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 14A
23A
BOTTOM 88A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 88A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
D2Pak - 7 Pin Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
TO-263CA 7 Pin Long Leads Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability
 Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
MS L 1
TO- 263CA 7Pin
RoHS c ompliant
(per JEDEC J-STD-020D
††
)
Yes
Qualification information
†
Qualification level
Industrial
††
(per JEDEC JESD47F
†††
guidelines)
D
2
Pak-7PIN
Moisture Sensitivity Level
Date Comments
• Updated data sheet with IR corporate template.
• Updated D2-Pak 7-Pin ordering information to reflect the End-Of-life of the Tube packaging option (EOL notice #289)
•
Removed TO-263CA package (EOL notice # 288).
• Removed R
θJA
= 62 °C/W & R
θ

= 0.5 °C/W from thermal resistance table on page 1( does not apply to D2-Pak 7- Pin).
• Updated part marking on page 9 .
Revision History
10/29/2014