A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 65 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 2.0 mA
hFE VCE = 5.0 V IC = 200 mA 35 --- ---
COB VCB = 28 V f = 1.0 MHz 250 pF
PG
η
ηη
ηC VCC = 28 V POUT = 25 W f = 175 MHz 8.5
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VHB25-28S
DESCRIPTION:
The ASI VHB25-28S is an NPN
power transistor, designed 108-175
MHz applications. The device utilizes
diffused emitter r esistors to achieve
good VSWR capability
FEATURES:
• Common Emitter-Class-C
• PG = 10 dB at 30 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO 36 V
VCEO 18 V
VEBO 4.0 V
PDISS 40 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 4.4 °C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10725
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UN C -2A
C
B
E E
