Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 9
1Publication Order Number:
PZT2907AT1/D
PZT2907AT1,
SPZT2907AT1G
Preferred Device
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die.
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
TA = 25C
PD1.5
12
W
mW/C
Thermal Resistance Junction−to−Ambient
(Note 1)
RqJA 83.3 C/W
Lead Temperature for Soldering,
0.0625 from case
Time in Solder Bath
TL260
10
C
Sec
Operating and Storage Temperature Range TJ, Tstg −65 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm2 of copper area.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
COLLECTOR
2, 4
1
BASE
3
EMITTER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
PZT2907AT1 SOT−223 1,000 / Tape & Reel
PZT2907AT1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
PZT2907AT3 SOT−223 4,000 / Tape & Reel
1
AYW
P2F G
G
P2F = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G= Pb−Free Package
http://onsemi.com
(Note: Microdot may be in either location)
PZT2907AT3G SOT−223
(Pb−Free)
4,000 / Tape & Reel
SPZT2907AT1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
PZT2907AT1, SPZT2907AT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
−60 − −
Vdc
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
−60 − −
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0 − −
Vdc
Collector−Base Cutoff Current
(VCB = −50 Vdc, IE = 0)
ICBO
− − −10
nAdc
Collector−Emitter Cutoff Current
(VCE = −30 Vdc, VBE = 0.5 Vdc)
ICEX
− − −50
nAdc
Base−Emitter Cutoff Current
(VCE = −30 Vdc, VBE = −0.5 Vdc)
IBEX
− − −50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
hFE 75
100
100
100
50
−
−
−
−
−
−
−
−
300
−
−
Collector-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
−
−
−
−
−0.4
−1.6
Vdc
Base-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
−
−
−
−1.3
−2.6
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT200 − −
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cc
− − 8.0
pF
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Ce
− − 30
pF
SWITCHING TIMES
Turn-On Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
ton − − 45 ns
Delay Time td− − 10
Rise Time tr− − 40
Turn-Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
toff − − 100 ns
Storage Time ts− − 80
Fall Time tf− − 30
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
PZT2907AT1, SPZT2907AT1G
http://onsemi.com
3
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
INPUT
Zo = 50 W
PRF = 150 Hz
RISE TIME 2.0 ns
0
1.0 k
50
-16 V
200 ns
-30 V
200
TO OSCILLOSCOPE
RISE TIME 5.0 ns 0
1.0 k
50
-30 V
200 ns
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME 5.0 ns
+15 V
1.0 k
1N916
INPUT
Zo = 50 W
PRF = 150 Hz
RISE TIME 2.0 ns
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10 -1000-100-10-1.0-0.1
IC, COLLECTOR CURRENT (mA)
hFE, CURRENT GAIN
TJ = 125C
TJ = -55C
TJ = 25C
Figure 3. DC Current Gain
1000
100
10 -1000-100-10-1.0
VCE = -20 V
TJ = 25C
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain Bandwidth Product
fT
, CURRENT‐GAIN BANDWIDTH PRODUCT (MHz)
-1.0
-0.8
-0.6
-0.4
-0.2
0
VOLTAGE (VOLTS)
-500-200-100
-50-20-10-0.1 -0.2 -0.5 -1.0 -2.0 -5.0
IC, COLLECTOR CURRENT (mA)
Figure 5. “ON” Voltage
TJ = 25C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE(sat) @ IC/IB = 10
30
20
10
7.0
5.0
3.0
2.0
-0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30
REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
CAPACITANCE (pF)
Ceb
Ccb
PZT2907AT1, SPZT2907AT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
010010
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81−3−5817−1050
PZT2907AT1/D
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