7 Ordering number: EN 2435A No2S5A 2SA1536/2SC3951 PNP/NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications Applications - High-definition CRT display video output, wide-band amp Features -Highfp: fp=600MHz - High breakdown voltage: Vcogo=70Vmin - Small reverse transfer capacitance and excellent high-frequency characteristic: c,~=1.9pF/NPN, 2.4pF/PNP. . - Complementary PNP and NPN types - Adoption of FBET process - Miealess type (): PNP Absolute Maximum Ratings at Ta= 25C unit Collector-to-Base Voltage Vcso ()80 Vv Collector-toEmitter Voltage Vcro ()70 V Emitter-to-Base Voltage VEBO ()3 Vv Collector Current Ic ()300 mA Collector Current (Pulse) Igp ()600 mA Collector Dissipation Pc ; 13 #W Te=25C oo 8 W Junction Temperature Tj 150 C Storage Temperature Tstg 55to+150 C Electrical Characteristics at Ta= 25C min typ. max unit Collector Cutoff Current Icgo Vcp=()60V Igp=0 ()0.1 pA Emitter Cutoff Current lrBo Vep=()2V,Ic=0 (-)1.0 pA DC Current Gain hpgl Vog=(-)10V I=()50mA 40% 320% hre2 Vog=()10V,Ic=()200mA -20 Gain-Bandwidth Product fr Vog=(-)10V, Ic=()100mA 600 MHz Output Capacitance Cob Vop=()30V,f=1MHz 2.4 pF , (3.1) pF Reverse Transfer Cre Vop=()30V,f=1MHz 1.9 pF Capacitance ' (2,4) pF C-E Saturation Voltage Verwat) Ic=()50mA,Ip=()5mA ()1.0 V E-B Saturation Voltage VBE(sat) Ic=()50mA,Ip=()5mA ()1.0 Vv *K hppl : The 25A1536/25C3951 are classified by 50mA hpg as follows : 40 c 80 | 60 D 120 | 100 E 200 | 160 F 320 | Package Dimensions 2042A (unit : mm) < 11.0 >te 15.5 | LW 5 - rT 1.4 = ek 2, DO t 4.8 B: Base C: Collector E: Emitter aoe SANYO: TOL26ML ? SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 9149M0/2247TA,TS No2435-1/4 me 799707b OOZO4LS 437 a 503 Pen28A1536/2SC3951 Collector Current,I, mA 2SA1536 1,8mA 1.2m *=1,0mA 0.8mA 0.6mA 0.4mA Collector Current,Ig mA Collectorto-Emitter Voltage,Vcg V 1,6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA ls=0 Collector-toEmitter Voltage, Vox V Ic VBE 2503951 VceE=10V | Ic -V -350, c BE r 3 2SA1536 3 Voe=10V 1 [ | 259 2 2 ne s zd 5 4 Ei o + o = g $ 5 2 - 21 8 | s oO \ 0.2 ~04 -0.6 -0.8 -3.0 -1.2 0 Base-toEmitter Voltage,Vpp V hre Ic 28A1536 Vce=10V (B10 Bio EF & Ss CO 5 3 5 = 3 E 3 oO 2 2 oO. A a 10 10 st Gain-Bandwidth Product,fp MHz 504. uss 10 -100 1000 Collector Current,Ig mA fr - 2541536 Vee=10V 8 anos Gain-Bandwidth Product,fy MHz af 10 10 Collector Current,ic mA me 7997076 OOCO4bb 373 Me 02 0.4 0.6 0.8 1.0 1.2 Baseio-Emitter Voltage,Vpp V hFe Ic 2803951 VceE=10V 10 100 1000 Collector Current,lg mA ft Ic 2303951 VceE=10V 100 10 Collector Current,I - mACollectorto-Emitter Reverse Transfer Capacitance, Cre - pF Saturation Voltage, Vcneay V . Collector CurrentI mA Qutput Capacitance, Cob. pF ! 9 ~ o S s ft wn Nw g 8 28A1536/25C3951 Cob - Veg 2SA1536 f= 1 MHz =1.0 -10 Collector-to-Base Voltage,Vcg V Cre - Vcp 2SA1536 f=1 MH. 10 CollectortoBase Voltage, Voz - V Vce(sat) Ic 2841536 ic / IB=10 -10 -100 Collector Current,ic mA operation Te= 25C For PNP, minus sign is omitted. 10 CoillectortoEmitter Voltage,Vcg V jz 100 Collector-to Emitter Cob Vcg 2803951 f= 1 MHz _ o Output Capacitance, Cob - pF 1.0 10 100 Collector-to-Base Voltage,Vcp V Cre Vee 2803951 f= 1 MHz o Reverse Transfer Capacitance, Cre pF 1.0 10 100 Collector-to-Base Voltage,Vcg V Vce(sat) Ic 2803951 Ic / la=10 ~ uN ny w Qo Saturation Voltage, Vopieaty V ~ 100 1000 Collector Current,Ig mA Pc Ta I I I 2S8A1536/2803951 [ ~ \ an \ ~ iN Collector Dissipation,P. W = a) No heat Sink 2 40 60 80 100 12 wo YT Ambient Temperature,Ta -*C me 75997076 OO204b7 aor = . 505