AUTOMOTIVE GRADE AUIRFR1018E HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) 60V 7.1m 8.4m 79A 56A typ. max. ID (Silicon Limited) ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number D-Pak S D-Pak AUIRFR1018E G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type AUIRFR1018E G S Source Orderable Part Number AUIRFR1018E AUIRFR1018ETRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 79 ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation 56 56 315 110 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Pead Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.76 20 88 47 11 21 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- --- 1.32 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-19 AUIRFR1018E Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Trans conductance RG(Int) Internal Gate Resistance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 60 --- --- V VGS = 0V, ID = 250A --- 0.073 --- V/C Reference to 25C, ID = 5mA --- 7.1 8.4 mVGS = 10V, ID = 47A 2.0 --- 4.0 V VDS = VGS, ID = 100A 110 --- --- S VDS = 50V, ID = 47A --- 0.73 --- --- --- 20 VDS = 60V, VGS = 0V A --- --- 250 VDS = 48V,VGS = 0V,TJ =125C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge Qsync Total Gate Charge Sync. (Qg - Qgd) td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss eff. (ER) Effective Output Capacitance (Energy Related) Coss eff. (TR) Effective Output Capacitance (Time Related) Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time --- --- --- --- --- --- --- --- --- --- --- --- --- 46 10 12 34 13 35 55 46 2290 270 130 390 630 69 --- --- --- --- --- --- --- --- --- --- --- --- Min. Typ. Max. Units --- --- 79 --- --- 315 --- --- --- --- --- --- --- 26 31 24 35 1.8 1.3 39 47 36 53 --- ID = 47A VDS = 30V nC VGS = 10V VDD = 39V ID = 47A ns RG = 10 VGS = 10V VGS = 0V VDS = 50V pF = 1.0MHz VGS = 0V, VDS = 0V to 48V VGS = 0V, VDS = 0V to 48V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 47A,VGS = 0V TJ = 25C ns TJ = 125C VR = 51V, TJ = 25C IF = 47A nC TJ = 125C di/dt = 100A/s A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax , starting TJ = 25C, L = 0.08mH, RG = 25, IAS = 47A, VGS =10V. Part not recommended for use above this value. ISD 47A, di/dt 1668A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Ris measured at TJ approximately 90C. 2 2015-11-19 AUIRFR1018E 1000 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 100 BOTTOM 4.5V 10 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 1 1 0.1 1 10 0.1 100 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 100 2.5 1000 100 TJ = 175C 10 TJ = 25C 1 VDS = 25V 60s PULSE WIDTH 2 3 4 5 6 7 ID = 47A VGS = 10V 2.0 1.5 1.0 0.5 0.1 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 9 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 16 4000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 3000 C, Capacitance (pF) 10 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics C iss 2000 1000 C oss C rss 0 1 ID= 47A VDS = 48V VDS = 30V 12 VDS = 12V 8 4 0 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 0 10 20 30 40 50 60 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-11-19 AUIRFR1018E 10000 100 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 TJ = 175C 10 TJ = 25C 1 1000 VGS = 0V 0.5 1.0 1.5 100 1msec 10 LIMITED BY PACKAGE 10msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 2.0 80 ID, Drain Current (A) LIMITED BY PACKAGE 60 40 20 0 75 100 125 150 175 V(BR)DSS, Drain-to-Source Breakdown Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 50 1 100 Fig 8. Maximum Safe Operating Area Id = 5mA 75 70 65 60 -60 -40 -20 0 20 40 60 80 100 120 140160 180 TJ , Temperature ( C ) Fig. 9 Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 0.8 EAS, Single Pulse Avalanche Energy (mJ) 400 0.6 Energy (J) 10 80 TC, Case Temperature (C) 0.4 0.2 0.0 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Fig. 11 Typical COSS Stored Energy 4 DC VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) 25 100sec 0.1 0.1 0.0 OPERATION IN THIS AREA LIMITED BY R DS (on) ID 5.3A 11A BOTTOM 47A 350 TOP 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2015-11-19 AUIRFR1018E Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 J 0.05 R1 R1 J 1 0.02 0.01 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 C 4 Ci= iRi Ci= iRi 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ri (C/W) i (sec) 0.026741 0.000007 0.28078 0.000091 0.606685 0.000843 0.406128 0.005884 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 100 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current Vs. Pulse width EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 47A 80 60 40 20 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) Starting TJ , Junction Temperature (C) Fig 15. Maximum Avalanche Energy Vs. Temperature 5 PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 2015-11-19 AUIRFR1018E 4.0 ID = 1.0A ID = 1.0mA 3.5 ID = 100A 14 ID = 250A 3.0 IRR (A) VGS(th) Gate threshold Voltage (V) 4.5 2.5 12 IF = 32A VR = 51V 10 TJ = 25C TJ = 125C 8 6 2.0 4 1.5 2 0 1.0 -75 -50 -25 0 25 50 75 0 100 125 150 175 200 600 800 1000 diF /dt (A/s) TJ , Temperature ( C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 320 14 12 IF = 47A VR = 51V 10 TJ = 25C TJ = 125C IF = 32A VR = 51V 280 TJ = 25C TJ = 125C 240 QRR (nC) IRR (A) 400 8 6 4 200 160 120 80 2 40 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/s) diF /dt (A/s) Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt 320 IF = 47A VR = 51V 280 TJ = 25C TJ = 125C QRR (nC) 240 200 160 120 80 40 0 0 200 400 600 800 1000 diF /dt (A/s) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2015-11-19 AUIRFR1018E Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V L VDS tp DRIVER D.U.T RG IAS 20V tp + V - DD 0.01 Fig 21a. Unclamped Inductive Test Circuit Fig 22a. Switching Time Test Circuit A I AS Fig 21b. Unclamped Inductive Waveforms Fig 22b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 23a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 23b. Gate Charge Waveform 2015-11-19 AUIRFR1018E D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUFR1018E YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-11-19 AUIRFR1018E D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-19 AUIRFR1018E Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M4 (+/- 600V) AEC-Q101-002 Class H1C (+/- 1500V) AEC-Q101-001 Class C4 (+/- 1000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 11/19/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Corrected typo on test condition Coss eff. VDS from "60V" to "48V" on page 2. Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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