Bridge Diode Low Noise type Single In-line Package OUTLINE D4SB60L Unit : mm Weight : 3.9g typ. Package3S 600V 4A Control No. Type No. * SIP * UL E142422 * * IFSM Date code 25 D4SB 60L 0264 15 - + - Feature * * * * 4.6 17.5 Thin-SIP UL E142422 Low Noise High VoltageLarge IFSM Web 'PSEFUBJMTPGPVUMJOFEJNFOTJPOT SFGFSUPPVSXFCTJUFPSUIF4FNJDPOEVDUPS 4IPSU'PSN$BUBMPH"TGPSUIFNBSLJOH SFGFSUPUIFTQFDJaDBUJPOi.BSLJOH 5FSNJOBM$POOFDUJPOu RATINGS Absolute Maximum Ratings Tc=25unless otherwise speci Symbol Conditions Item D4SB60L Unit Storage Temperature Operation Junction Temperature Tstg -40150 Tj 150 Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance IO IFSM 2 It Vdis TOR J534 Tc = 111 50Hz With heatsink 50Hz sine wave, Resistance load Ta = 25 Without heatsink 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj = 25 2mst10msTj = 25 per diode AC Terminals to Case, AC 1 minute 0.5 Nm Recommended torque : 0.5 Nm 4 A 2.5 150 A 80 A2s 2 kV 0.8 Nm Electrical Characteristics Tc=25unless otherwise speci Pulse measurement, per diode VF IF = 2A, IR trr VR = VRM, Pulse measurement, per diode IF = 0.1A, IR = 0.1A, per diode jc Junction to Case, With heatsink MAX 5.5 jl Junction to Lead, Without heatsink Junction to Ambient, Without heatsink MAX 6 MAX 30 ja 54 Type No. MAX 0.95 MAX 10 A MAX 10 s V /W Thin SIP UL Bridge D4SB60L CHARACTERISTIC DIAGRAMS Sine wave 50Hz )[TJOFXBWFJTVTFEGPSNFBTVSFNFOUT Typical 4FNJDPOEVDUPSQSPEVDUTHFOFSBMMZIBWFDIBSBDUFSSJTUJDWBSJBUJPO 5ZQJDBMJTBTUBUJTUJDBMBWFSBHFPGUIFEFWJDFhTBCJMJUZ J534 55