RFD15P05, RFD15P05SM, RFP15P05 S E M I C O N D U C T O R 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB * 15A, 50V SOURCE DRAIN GATE * rDS(ON) = 0.150 * Temperature Compensating PSPICE Model DRAIN (FLANGE) * Peak Current vs Pulse Width Curve * UIS Rating Curve Description JEDEC TO-251AA The RFD15P05, RFD15P05SM, and RFP15P05 P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) PACKAGING AVAILABILITY GATE PART NUMBER PACKAGE BRAND RFD15P05 TO-251AA F15P05 RFD15P05SM TO-252AA F15P05 RFP15P05 TO-220AB RFP15P05 SOURCE Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A. G Formerly developmental type TA09833. Absolute Maximum Ratings S TC = +25oC RFD15P05, RFD15P05SM, RFP15P05 UNITS Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -50 V Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -50 V Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 V Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 15 Refer to Peak Current Curve A Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 0.533 W W/ o C Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -55 to +175 oC Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260 oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1995 4-27 File Number 2387.3 Specifications RFD15P05, RFD15P05SM, RFP15P05 Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current Gate-Source Leakage Current MIN TYP MAX UNITS ID = 250A, VGS = 0V -50 - - V VGS = VDS, ID = 250A -2.0 - -4.0 V TC = +25oC - - -1 A TC = +150oC - - -50 A VGS = 20V - - 100 nA ID = 15A, VGS = -10V - - 0.150 VDD = -25V, ID = 7.5A RL = 3.3, VGS = -10V RGS = 12.5 - - 60 ns - 16 - ns tR - 30 - ns tD(OFF) - 50 - ns tF - 20 - ns tOFF - - 100 ns - - 150 nC - - 75 nC IDSS IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tD(ON) TEST CONDITIONS VDS = -50V, VGS = 0V Total Gate Charge QG(TOT) VGS = 0V to -20V VDD = -40V, ID = 15A, RL = 2.67 Gate Charge at -10V QG(-10) VGS = 0V to -10V Threshold Gate Charge QG(TH) VGS = 0V to -2V - - 3.5 nC VDS = -25V, VGS = 0V f = 1MHz - 1150 - pF Input Capacitance CISS Output Capacitance COSS - 300 - pF Reverse Transfer Capacitance CRSS - 56 - pF Thermal Resistance Junction to Case RJC TO-220AB, TO-251AA, TO-252AA - - 1.875 o C/W Thermal Resistance Junction to Ambient RJA TO-251AA, TO-252AA - - 100 o C/W TO-220AB - - 80 oC/W MIN TYP MAX UNITS Source-Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS Forward Voltage VSD ISD = -15A - - -1.5 V Reverse Recovery Time tRR ISD = -15A, dISD/dt = -100A/s - - 125 ns 4-28 RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves TC = +25oC 2 -100 ZJC, NORMALIZED THERMAL RESPONSE ID , DRAIN CURRENT (A) 1 100s -10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -1 -1 10ms 0.5 0.2 0.1 0.1 .02 .01 100ms DC VDSS MAX = -50V -10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) PDM .05 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 -100 10-4 10-3 10-2 10-1 FIGURE 1. SAFE OPERATING AREA CURVE TC = +25oC IDM , PEAK CURRENT CAPABILITY (A) ID , DRAIN CURRENT (A) -200 -12 -8 -4 0 50 75 100 125 150 175 VGS = -20V FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: -100 I = I 175 - T C ------------------25 150 VGS = -10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -10 10-5 TC , CASE TEMPERATURE (oC) 10-4 10-3 10-2 10-1 ID(ON), ON STATE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VDD = -15V VGS = -10V VGS = -8V -30 VGS = -7V -20 VGS = -6V -10 VGS = -4.5V VGS = -5V 0 0.0 -1.5 -3.0 -4.5 101 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250s, TC = +25oC VGS = -20V 100 t, PULSE WIDTH (s) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE -40 101 FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -16 25 100 t, RECTANGULAR PULSE DURATION (s) -6.0 -7.5 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS -40 -32 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -55oC +25oC -24 +175oC -16 -8 0 0.0 -2.0 -4.0 -6.0 -8.0 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 4-29 -10.0 RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves (Continued) VGS = VDS, ID = -250A 2.0 2.0 1.5 1.0 0.5 THRESHOLD VOLTAGE VGS(TH) , NORMALIZED GATE -40 0 40 80 120 160 1.0 0.5 0.0 -80 0.0 -80 1.5 200 -40 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 80 120 160 200 ID = -250A 1.2 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 1.0 0.8 0.6 0.4 0.2 0.0 200 0 25 TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN-SOURCE VOLTAGE (V) CISS VDD = BVDSS VDD = BVDSS -7.5 -37.5 1000 800 600 COSS 400 RL = 3.33 IG(REF) = -0.65mA VGS = -10V -25 CRSS -5.0 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS -12.5 200 -2.5 0.0 0 0 0 -5 -10 -15 -20 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE 175 150 -10.0 -50 VGS = 0V, f = 1MHz 1400 1200 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE C, CAPACITANCE (pF) 40 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE POWER DISSIPATION MULTIPLIER BVDSS , NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 0 TJ , JUNCTION TEMPERATURE (oC) -25 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN7260 4-30 VGS , GATE-SOURCE VOLTAGE (V) rDS(ON) , NORMALIZED ON RESISTANCE PULSE DURATION = 250s, VGS = -10V, ID = -15A 2.5 RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves (Continued) -50 IAS , AVALANCHE CURRENT (A) STARTING TJ = +150oC STARTING TJ = +25oC -10 If R = 0 tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -1 0.1 1 10 tAV , TIME IN AVALANCHE (ms) 100 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VDS BVDSS tP VDS L IAS VARY tP TO OBTAIN RG VDD - REQUIRED PEAK IAS DUT 0V VDD + tP IL -VGS 0.01 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDD tON tOFF tD(OFF) tD(ON) RL 10% 10% VDS 0V tF tR VDS DUT 90% 90% VGS 10% -VGS RGS 50% 50% PULSE WIDTH 90% FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-31 RFD15P05, RFD15P05SM, RFP15P05 Temperature Compensated PSPICE Model for the RFD15P05, RFD15P05SM, RFP15P05 REV 9/06/94 CA 12 8 1.6e-9 CB 15 14 1.47e-9 CIN 6 8 1.09e-9 LDRAIN 5 10 2 DRAIN DPLCAP DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD RSCL1 RSCL2 5 51 EBREAK 5 11 17 18 -73.0 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 - RGATE 9 IT 8 17 1 1 LGATE 17 18 + DBODY MOS2 21 - 18 20 8 EBREAK 16 VTO - EVTO + GATE RDRAIN 6 8 ESG + ESCL + .SUBCKT RFP15P05 2 1 3 MOS1 6 LDRAIN 2 5 1e-9 LGATE 1 9 6.73e-9 LSOURCE 3 7 6.69e-9 RIN 11 DBREAK CIN 8 RSOURCE LSOURCE 3 SOURCE MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 63.6e-3 RGATE 9 20 7.37 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 46.5e-3 RVTO 18 19 RVTOMOD 1 S1A 12 13 8 S1B 7 S2A 14 13 13 15 17 RBREAK S2B 18 RVTO CB CA IT + 6 EGS 8 - + EDS - 14 5 8 19 - VBAT + S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.65 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))} .MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8) .MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5) .MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10) .MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7) .MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5) .MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6) .MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. 4-32