SOT-363 Plastic-Encapsulated Transistors
2N7002DW MOSFET (N-Channel)
FEATURES
Power dissipation
P
D : 0.2 W (Tamb=25℃)
Collector current
I
D: 115 mA
Collector-base voltage
V
DS: 60 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage * V(BR)DSS VGS=0 V, ID=10 µA 60 70
Gate-Threshol d Voltage* Vth(GS) VDS=VGS, ID=250 µA 1 1.5 2 V
Gate-body Leakage* lGSS V
DS=0 V, VGS=±20 V ±10 nA
VDS=60 V, VGS=0 V 1
Zero Gate Voltage Drain Current * IDSS VDS=60V,VGS=0V,Tj=125 500 µA
On-state Drain Current * ID(ON) V
GS=10 V, VDS=7.5 V 500 1000 mA
VGS=5 V, ID=50 mA 3.2 7.5
Drain-Source On -Resist ance * rDS(0n) VGS=10 V, ID=500 mA 4.4 13.5 Ω
Forward Tran conductance * gFS V
DS=10 V, ID=200 mA 80 ms
Input Capacitance Ciss 22 50
Output Capacitance Coss 11 25
Reverse Tr ansfer Capacitance CrSS
VDS=25 V, VGS=0 V
f=1 MHz 2 5
pF
SWITCHING
Turn -o n Time td(0n)
7 20
Turn-off Time td(off)
VDD=30 V, RL=150 Ω
ID=200 mA, VGEN=10 V
RG=25 Ω 11 20
ns
* Pulse test , pulse width≤300µs, duty cycle≤2% .
Marking: K7 2
Transys
Electronics
LI
M
ITE
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