2SJ537
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSVI)
2SJ537
Chopper Regulator, DCDC Converter and Motor Drive
Applications
z Low drainsource ON resistance : RDS (ON) = 0.16 (typ.)
z High forward transfer admittance : |Yfs| = 3.5 S (typ.)
z Low leakage current : IDSS = 100 A (VDS = 50 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drainsource voltage VDSS 50 V
Draingate voltage (RGS = 20 k) VDGR 50 V
Gatesource voltage VGSS ±20 V
DC (Note 1) ID 5 A
Drain current
Pulse (Note 1) IDP 15 A
Drain power dissipation PD 0.9 W
Channel temperature Tch 150 °C
Storage temperature range Tstg 55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient Rth (cha) 138 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC TO-92MOD
JEITA
TOSHIBA 2-5J1C
Weight: 0.36 g (typ.)
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V — — ±10 A
Drain cutoff current IDSS V
DS = 50 V, VGS = 0 V — — 100 A
Drainsource breakdown
voltage V (BR) DSS I
D = 10 mA, VGS = 0 V 50 — — V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 0.8 — 2.0 V
VGS = 4 V, ID = 1.3 A — 0.27 0.34
Drainsource ON resistance RDS (ON)
VGS = 10 V, ID = 2.5 A — 0.16 0.19
Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 1.5 3.5 — S
Input capacitance Ciss — 470 —
Reverse transfer capacitance Crss — 60 —
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
— 210 —
pF
Rise time tr — 25 —
Turnon time ton — 35 —
Fall time tf — 20 —
Switching time
Turnoff time toff — 120 —
ns
Total gate charge (Gatesource
plus gatedrain) Qg — 18 —
Gatesource charge Qgs — 13 —
Gatedrain (“miller”) charge Qgd
VDD 40 V, VGS = 10 V,
ID = 5 A
— 5 —
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR — — — 5 A
Pulse drain reverse current
(Note 1)
IDRP — — — 15 A
Forward voltage (diode) VDSF I
DR = 5 A, VGS = 0 V — — 1.5 V
Marking
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
J537
Lot No.
Note 2
Part No. (or abbreviation code)
2SJ537
2009-09-29
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Forward transfer admittance
⎪Yfs⎪ (S)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Gate-source voltage VGS (V)
VDS – VGS
Drain current ID (A)
|Yfs| – ID
Drain current ID (A)
Drain-source ON resistance
RDS (ON) (Ω)
RDS (ON) – ID
Drain-source voltage VDS (V)
0
−2
−3
−4
−5
−0.8 −1.2 −1.6 −2.00 −0.4
VGS = −2.5V
−
5
−3.5
−3
−4
−10
−1
−4−6 −8 −10
0
−4
−6
−8
−10
−2
0−2
VGS = −2.5 V
−3
−3.5
−8
−10
−
4
−
6
−5
−8−12 −16 −20
0
−0.8
−1.2
−1.6
−2.0
−0.4
0−4
−100
0.1
1
−0.1 −1 −10 −100
0.01
0.1
−4 −8
0
−4
−6
−8
−10
−2
0 −2
10 10
−10
Ta = −55°C
25
100 1
VGS = −4 V
−10
−6
−10 −1 −0.1
Common
source
Ta = 25°C
Pulse Test
−8
−6
Common source
Ta = 25°C
Pulse Test
Ta = −55°C
100
25
Common source
VDS = −10 V
Pulse Test
ID = −5 A
−1.3
−2.5
Common source
Ta = 25℃
Pulse Test
Common source
VDS = −10 V
Pulse Test
Common source
Ta = 25°C
Pulse Test
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Ambient temperature Ta (°C)
Vth − Ta
Gate threshold voltage
Vth (V)
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
Capacitance C (pF)
Capacitance – VDS
RDS (ON) − Ta
Drain-source ON resistance
RDS (ON) ( Ω)
Ambient temperature Ta (°C)
IDR − VDS
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
PD − Ta
Drain power dissipation
PD (W)
Drain-source voltage VDS (V)
Dynamic input / output
characteristics
0
−80 040 80 120 160−40
−2.0
−0.4
−1.2
−0.8
−1.6
0
1.0
0.2
0.6
0.4
−40 −80 1600 40 120 80
1.6
0.4
1.2
0
0 8040 160120
0.8
VGS = 10 V
VGS = 4 V
ID = 2.5A
1.3
−1.3
5
−2.5
10
−0.1 −100
100
−1 −10
10000
0.40 0.8 1.2 1.6
−0.1
−1
−100
−10
VGS = 0 V
−1
−10
−5
−3
1000
Common source
Pulse Test
Drain-source voltage VDS (V)
Common source
VDS = −10 V
ID = −1mA
Pulse Test
Gate-source voltage VGS (V)
Common source
Ta = 25°C
Pulse Test
Ciss
Coss
Cr
ss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
0.8
−80
0
−60
−40
−20
0 20 30
10
−10
−5
−20
0
−15
VDD = −40V
−20V
−
1
0
V
VDS
VGS
Common source
ID = −5 A
Ta = 25°C
Pulse Test
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rth − tw
Pulse width tw (S)
Normalized transient thermal impedance
rth (t)/Rth (ch-a)
Single Pulse
0.001
100μ 1m 10m 100m 1 10 100
0.01
0.1
1
SAFE OPERATING AREA
Drain-source voltage VDS (V)
Drain current ID (A)
−0.01 −0.1 −1 −10
−0.1
−1
−100
−0.01
−100
−10
※ Single pulse
Ta=25℃
Curves must be derated linearly
with increase in temperature.
ID max (pulse)*
IDmax (continuous)
DC OPEATION
Ta =25°C
100 μs *
1 ms *
VDSS max
10
Duty=t/T
Rth(ch-a)=138℃/W
2SJ537
2009-09-29
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
