VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 1Document Number: 94523
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Ultrafast Rectifier, 8 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-MUR820PbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AC
IF(AV) 8 A
VR200 V
VF at IF0.895 V
trr typ. See Recovery table
TJ max. 175 °C
Diode variation Single die
Anode
13
2
Cathode
Base
cathode
TO-220AC
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current IF(AV) Total device, rated VR, TC = 150 °C 8
ANon-repetitive peak surge current IFSM 100
Peak repetitive forward current IFM Rated VR, square wave, 20 kHz, TC = 150 °C 16
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA 200 - -
V
Forward voltage VF
IF = 8 A - - 0.975
IF = 8 A, TJ = 150 °C - - 0.895
Reverse leakage current IR
VR = VR rated - - 5 μA
TJ = 150 °C, VR = VR rated - - 250
Junction capacitance CTVR = 200 V - 25 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 2Document Number: 94523
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
ns
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A - - 25
TJ = 25 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 160 V
-20-
TJ = 125 °C - 34 -
Peak recovery current IRRM
TJ = 25 °C - 1.7 - A
TJ = 125 °C - 4.2 -
Reverse recovery charge Qrr
TJ = 25 °C - 23 - nC
TJ = 125 °C - 75 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range TJ, TStg -65 - 175 °C
Thermal resistance,
junction to case RthJC --3.0
°C/W
Thermal resistance,
junction to ambient RthJA --50
Thermal resistance,
case to heatsink RthCS
Mounting surface, flat, smooth and
greased -0.5-
Weight -2.0- g
-0.07- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AC MUR820
VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 3Document Number: 94523
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
01.80.4 0.8
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1.2
0.1
0.2 0.6 1.0 1.4 1.6
0.01
0.1
1
10
100
0 100 150
VR - Reverse Voltage (V)
IR - Reverse Current (µA)
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
200 25050
0.001
100
1000
1 10 100 1000
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 4Document Number: 94523
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
03
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
69
Square wave (D = 0.50)
Rated VR applied
12
06
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
39
2
4
10
6
8
RMS limit
12
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
20
40
VR = 160 V
TJ = 125 °C
TJ = 25 °C
30
50
10
IF = 16 A
IF = 8 A
IF = 4 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
40
IF = 16 A
IF = 8 A
IF = 4 A
200
120
VR = 160 V
TJ = 125 °C
TJ = 25 °C
80
160
0
VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 5Document Number: 94523
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 6Document Number: 94523
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MUR820PbF 50 1000 Antistatic plastic tube
VS-MUR820-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95221
Part marking information TO-220ACPbF www.vishay.com/doc?95224
TO-220AC-N3 www.vishay.com/doc?95068
2- Ultrafast MUR series
3- Current rating (8 = 8 A)
- Voltage rating (20 = 200 V)
4
1- Vishay Semiconductors product
5
Device code
51 32 4
VS- MUR 8 20 PbF
PbF = lead (Pb)-free and RoHS,compliant
- Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
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Revision: 08-Feb-17 1Document Number: 91000
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