DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Gate up to 2kV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability * * * * Case: SOT563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) SOT563 ESD protected up to 2kV Top View Bottom View D2 G1 S1 S2 G2 D1 Top View Internal Schematic Ordering Information (Note 3) Part Number DMN2004VK-7 DMN2004VK-13 Notes: Case SOT563 SOT563 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information NAB YM Date Code Key Year 2006 Code T Month Code Jan 1 NAB = Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMN2004VK Document number: DS30865 Rev. 5 - 2 1 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMN2004VK Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) TA = 25C TA = 85C Steady State Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics Units V V IDM Value 20 8 540 390 1.5 Symbol PD RJA TJ, TSTG Value 250 500 -55 to +150 Units mW C/W C ID mA A @TA = 25C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 1 1 V A A VGS = 0V, ID = 10A VDS = 16V, VGS = 0V VGS = 4.5V, VDS = 0V VGS(th) 0.5 1.0 V RDS (ON) 0.4 0.5 0.7 0.55 0.70 0.9 |Yfs| VSD 200 0.5 1.4 ms V VDS = VGS, ID = 250A VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss 150 25 20 pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf 8.0 13.3 53.5 36.1 ns ns ns ns VDD = 10V, RL = 47, ID = 200mA. VGEN = 4.5V, RG = 10 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. DMN2004VK Document number: DS30865 Rev. 5 - 2 2 of 6 www.diodes.com March 2012 (c) Diodes Incorporated ID, DRAIN CURRENT (A) DMN2004VK 0 4 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 1 0.1 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current VGS = 5V Pulsed T A = 125C TA = 150C TA = 85C TA = -55 C TA = 25C TA = 0C TA = -25 C 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004VK Document number: DS30865 Rev. 5 - 2 3 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMN2004VK Tj, JUNCTION TEMPERATURE (C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) IDR, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 1,000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004VK Document number: DS30865 Rev. 5 - 2 4 of 6 www.diodes.com VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation March 2012 (c) Diodes Incorporated DMN2004VK Package Outline Dimensions A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMN2004VK Document number: DS30865 Rev. 5 - 2 5 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMN2004VK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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