DMN2004VK-7 - DIODES INC - Datasheet.Directory

DMN2004VK

Document number: DS30865 Rev. 5 - 2 1 of 6

www.diodes.com March 2012

DMN2004VK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected Gate up to 2kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN2004VK-7 SOT563 3000/Tape & Reel

DMN2004VK-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT563

Top View Top View

Internal Schematic

Bottom View

ESD protected up to 2kV

S

1

D

1

D

2

S

2

G

1

G

2

NAB = Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

NAB YM

DMN2004VK

Document number: DS30865 Rev. 5 - 2 2 of 6

www.diodes.com March 2012

DMN2004VK

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 20 V

Gate-Source Voltage VGSS ±8 V

Drain Current (Note 4) Steady

State TA = 25°C

TA = 85°C ID 540

390 mA

Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 1.5 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) PD 250 mW

Thermal Resistance, Junction to Ambient R

θ

JA 500 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 16V, VGS = 0V

Gate-Source Leakage IGSS ⎯ ⎯ ±1 μA VGS = ±4.5V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS

(

th

)

0.5 ⎯ 1.0 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON) ⎯ 0.4

0.5

0.7

0.55

0.70

0.9 Ω VGS = 4.5V, ID = 540mA

VGS = 2.5V, ID = 500mA

VGS = 1.8V, ID = 350mA

Forward Transfer Admittance |Yfs| 200 ⎯ ⎯ ms VDS =10V, ID = 0.2A

Diode Forward Voltage VSD 0.5 ⎯ 1.4 V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance Ciss ⎯ ⎯ 150 pF

VDS = 16V, VGS = 0V

f = 1.0MHz

Output Capacitance Coss ⎯ ⎯ 25 pF

Reverse Transfer Capacitance Crss ⎯ ⎯ 20 pF

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time td

(

on

)

⎯ 8.0 ⎯ ns VDD = 10V, RL = 47Ω,

ID = 200mA. VGEN = 4.5V,

RG = 10Ω

Rise Time t

r

⎯ 13.3 ⎯ ns

Turn-Off Delay Time td

(

off

)

⎯ 53.5 ⎯ ns

Fall Time tf ⎯ 36.1 ⎯ ns

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subje c t to produ ct testing.

DMN2004VK

Document number: DS30865 Rev. 5 - 2 3 of 6

www.diodes.com March 2012

DMN2004VK

0

012345

V , DRAIN-SOURCE VOL TAGE (V)

Fig. 1 Typical Output Characteristics

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V , GATE-SOURCE VOLTAGE (V)

Fig. 2

GS

Reverse Drain Current vs. Source-Drain Vo ltage

T , CHANNEL TEMPERA T URE (°C)

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

ch

0.1

I DRAIN CURRENT( A)

Fig . 4 Static D r ai n- Source O n-Resist ance vs . Dr ain Cur r ent

D,

R STA T IC DRAIN-SOURCE

ON-RESIST ANCE (

DS(on),

Ω)

1

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

D

V = 5V

Pulsed

GS

T = 150 C

A

°

T = -55C

A

°

T = -25C

A

°

T = 0C

A

°

T = 25C

A

°

T = 125 C

A

°

T = 85C

A

°

6

DMN2004VK

Document number: DS30865 Rev. 5 - 2 4 of 6

www.diodes.com March 2012

DMN2004VK

I , DRAIN CURRENT (A)

Fig. 7

D

On-Resistance vs. Drain Current and Gate Voltage

T, JUNCTION TEMPERATURE ( C)

Fig. 8

j

°

Static Drai n-Source, On-Resi stance vs. Temperature

I , DRAIN-SOURCE LEAKAGE

CURRENT (nA)

DSS

I , REVERSE DRAIN CURRENT (A)

DR

1,000

I , DRAIN CURRENT (mA)

D

Fig . 11 Forw ard Tr ansfer Admittance vs . D r ai n Curr ent

|Y |, FORWARD TRANSFER ADMITT ANCE (S)

fs

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 Capacitance V ariation

DMN2004VK

Document number: DS30865 Rev. 5 - 2 5 of 6

www.diodes.com March 2012

DMN2004VK

Package Outline Dimensions

Suggested Pad Layout

SOT563

Dim Min Max Typ

A 0.15 0.30 0.20

B 1.10 1.25 1.20

C 1.55 1.70 1.60

D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60

K 0.55 0.60 0.60

L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

Dimensions Value (in mm)

Z 2.2

G 1.2

X 0.375

Y 0.5

C1 1.7

C2 0.5

A

M

L

BC

H

K

GD

X

Z

Y

C1

C2

G

DMN2004VK

Document number: DS30865 Rev. 5 - 2 6 of 6

www.diodes.com March 2012

DMN2004VK

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