BCW61 Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88171 www.vishay.com
09-May-02 1
New Product
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybr id cicuits.
• Low Current, Low Voltage.
• As complementar y types, BCW60 Series NPN
transistors are recommended.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking BCW61A = BA
Code: BCW61B = BB
BCW61C = BC
BCW61D = BD
Packaging Codes/Options:
E8/10K per 13”reel (8mm tape), 30K/box
E9/3K per 7”reel (8mm tape), 30K/box
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Collector-Emitter Voltage (VBE = 0) –VCES 32 V
Collector-Emitter Voltage –VCEO 32 V
Emitter-Base Voltage –VEBO 5.0 V
Collector Current (DC) –IC100 mA
Peak Collector Current –ICM 200 mA
Base Current (DC) –IB50 mA
Power Dissipation Ptot 250 mW
Maximum Junction Temperature Tj150 °C
Storage Temperature Range TSTG –65 to +150 °C
Thermal Resistance, Junction to Ambient Air RθJA 500(1) °C/W
Note:
(1) Mounted on FR-4 printed-ciruit board.
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
Pin Configuration
1. Base 2. Emitter
3. Collector
BCW61 Series
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88171
209-May-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Symbol Min. TYP. Max. Unit
DC Current Gain
at –VCE = 5 V, –IC = 10 µA BCW61A hFE ––––
at –VCE = 5 V, –IC = 10 µA BCW61B hFE 30 –––
at –VCE = 5 V, –IC = 10 µA BCW61C hFE 40 –––
at –VCE = 5 V, –IC = 10 µA BCW61D hFE 100 –––
at –VCE = 5 V, –IC = 2 mA BCW61A hFE 120 –220 –
at –VCE = 5 V, –IC = 2 mA BCW61B hFE 180 –310 –
at –VCE = 5 V, –IC = 2 mA BCW61C hFE 250 –460 –
at –VCE = 5 V, –IC = 2 mA BCW61D hFE 380 –630 –
at –VCE = 1 V, –IC = 50 mA BCW61A hFE 60 –––
at –VCE = 1 V, –IC = 50 mA BCW61B hFE 80 –––
at –VCE = 1 V, –IC = 50 mA BCW61C hFE 100 –––
at –VCE = 1 V, –IC = 50 mA BCW61D hFE 110 –––
Collector-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA –VCEsat 60 –250 mV
at –IC = 50 mA, –IB = 1.25 mA –VCEsat 120 –550 mV
Base-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA –VBEsat 600 –850 mV
at –IC = 50 mA, –IB = 1.25 mA –VBEsat 680 –1050 mV
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA –VBE 600 650 750 mV
at –VCE = 5 V, –IC = 10 µA–VBE –550 –mV
at –VCE = 1 V, –IC = 50 mA –VBE –720 –mV
Collector-Emiter Cut-off Current
at –VCE = 32 V, VEB=0 –ICES ––20 nA
at –VCE = 32 V, VEB=0, TA = 150°C––20 µA
Emitter-Base Cut-off Current
at –VEB = 4 V, IC=0 –IEBO ––20 nA
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz fT100 ––MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHZ, IE=0 CCBO –4.5 –pF
Emitter-Base Capacitance
at –VEB = 0.5 V, f = 1 MHZ, IC=0 CEBO –11 –pF
Noise Figure
at –VCE = 5 V, –IC= 200 µA, RS= 2 kΩ, f = 100 kHZ, B = 200Hz
F–26dB
Small Signal Current Gain BCW60A –200
at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZBCW60B –260
BCW60C hfe –330
BCW60D –520
Tur n-on Time at RL= 990Ω(see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA ton –85 150 ns
Tur n-off Time at RL= 990Ω(see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA toff –480 800 ns
BCW61 Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88171 www.vishay.com
09-May-02 3
10%
90%
90%
90%
10%
10%
toff
tstf
tdtr
ton
INPUT
OUTPUT
Fig. 1 - Switching Waveforms
