RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°CIF(AV) 50 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 400 Amps.
Current Squared Time at t < 8.3 ms. I2t660 A2S
Maximum Forward Voltage per Diode at IF = 25 Amps. VF1.1 Volts
Maximum DC Reverse Current Ta = 25 °CIR10 µA
at Rated DC Blocking Voltage Ta = 100 °CIR(H) 200 µA
Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W
Operating Junction Temperature Range TJ10 °C
Storage Temperature Range TSTG - 40 to + 150 °C
Notes :
1. Thermal Resistance from junction to case with units mounted on heatsink. UPDATE : AUGUST 3, 1998
RATING
RBV25
Dimensions in millimeters
C3 4.9 ±
3.9 ±
∅ 3.2 ± 0.1
11 ± 0.2
17.5 ± 0.5
20 ± 0.3
0.7 ± 0.1
1.0 ± 0.1
2.0 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
7.5
±0.2
13.5 ± 0.3