ALPHA IND/ SEMICONDUCTOR USE D MM 0585443 0001301 Tbl MMALP Microwave Abrupt Tuning Diodes and Chips Features Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage Meet All MiIL-STD-750 Requirements Types m@ DVH6700 Series Mm CVH2000 Series 07-14 Description Alpha abrupt-junction tuning varactors have an epi- taxial, mesa design and a high density silicon dioxide passivation. This passivation, in conjunction with other processes, results in high reliability, low leakage current, and low post-tuning drift. To minimize series resistance and provide chips capable of being bonded to in a wide variety of packages using conventional bonding tech- niques, tightly controlled metallization on the top and back surfaces of the chip is utilized. Variations from square root law are minimized while maintaining high tuning ratios and highest Q by a careful selection of epitaxial silicon and by anode diffusions that are computer controlled. All diodes are available in a wide selection of packages or in chip form. See Section 8 for a complete section of standard packages. Applications Tuning diodes are offered in a large selection of ca- pacitance ranges. Alpha also has hyperabrupt tuning diodes for those applications requiring larger capaci- tances, wider tuning ranges, and linear frequency versus voltage tuning at slightly lower Q. Fortuning applications above Ku-band, Alpha has a series of GaAs tuning diodes with exceptionally high Q. Silicon abrupt junction tuning varactors are ideally suited for frequency tuning applications through Ku- band. They may also be used for tuning filters, phase shifters, oscillators, upconverters and low order multi- pliers. Typical C, (total capacitance - includes package) and C, (junction capacitance) curves are shown in Figures 1 and 2. DVH 6700 = oo ND C,Total CapacitancepF 4. 2 VappApplied VoltageVolts Figure 1. Total Capacitance vs. Applied VoltageALPHA IND/ SEMICONDUCTOR WBE D MM 0585443 0001302 978 MBALP 7-07-/9 Microwave Abrupt Tuning Diodes and Chips CVH 2000 C,Junction Capacitance pF : 6810 20 VappApplied VoltageVolts 40 6080100 Figure 2. Junction Capacitance vs. Applied Voltage Diode Q is dependent on several factors. Highest Q is obtained from low breakdown voltage and low capaci- tance diodes; Q decreases as either breakdown voitage or capacitance is increased. In addition, Q, being an inverse function of capacitance and series resistance, increases with reverse bias. Typical Q vs. reverse bias curves for several diodes of different C, values are shown in Figure 3. Atypical schematic representation of a packaged High Q tuning varactor is shown in Figure 4. Usually the L, (package series inductance) and C, (package parallel capacitance) can be designed into most circuits. The junction capacitance of abrupt junc- tion diodes is given by the following equation. C(V) = C,(1 + We)r Where: C(V) = Junction capacitance at reverse voltage, V Co = Junction capacitance at V=0 V = Applied reverse voltage @ = Contact potential of the diode=0.8V n = Slope of C-V curve when plotted on log-log n= .47 for actual devices: n=.50 for the ideal case. The total capacitance of a packaged diode is thus C,(V) = C, + C(V) where C, is the package stray capaci- tance. If C(V) is large compared with C,, no degradation of the diode tuning ratio due to package parasitics is observed. However, if C, and CV) are of the same order, a substantial decrease in tuning ratio will occur. This is clearly seen by comparing the C, and C, vs. voltage curves in Figures 1 and 2. See Application Note 80000 in Section 7 for sug- gested handling and bonding procedures for diode chips. 40 C,, = 0.6 pF 20 10 ao Chq = 15 pF a A Ls Cp, = 39 pF _i_ et i >it 2h 1 .8F 6 4 .2r a 10 20. 30. 405060 VappAppliedVoltage Figure 3. Typical Q vs. Applied Voltage Abrupt Junction Tuning Diode Q Normalized to Q at V=4 Vdc Package inductance Package capacitance Diode junction capacitance Diode series resistance 2OLPL tot Wit Figure 4. Typical Schematic Representation of a Packaged Tuning VaractorALPHA IND/ SEMICONDUCTOR Microwave Abrupt Tuning Diodes and Chips 4W8E D MM 0585443 0001303 434 MBALPT-07-!9 Extra High Q DVH6700 Series Maximum Ratings Parameter Symbol Value Units Reverse Voitage Va Same as V,,| Volts Device Dissipation at T,=25C 250 mw Operating Temperature) T,, -65 to +150 C Storage Temperature Range Tug -65 to +200 C Odering information 6700 Series Example: Desired Device Specification V,,=45V C,,=3.3 pF Pkg=135 Resultant Type Number DVH6742-11 Tuning diodes are available which exceed the V, and C, values specified on this table. Please contact an Alpha representative at 617-935-5150 for additional information. Breakdown Voltage 30 Volt Series 45 Volt Series 60 Volt Series 90 Volt Series DVH6730 099-001 Pkg | DVH6740 099-001 Pkg | DVH6760 099-001 Pkg | DVH6790 099-001 Pkg DVH6731 023-001 Pkg | DVH6741 023-001 Pkg | DVH6761 023-001 Pkg | DVH6791 023-001 Pkg DVH6732 = 135-001 Pkg | DVH6742 = =135-001 Pkg | DVH6762 135-001 Pkg | DVH6792 135-001 Pkg DVH6700 DVH6733 168-001 Pkg | DVH6743 168-001 Pkg | DVH6763 168-001 Pkg | DVH6793 168-001 Pkg Extra High Q DVH6734 168-801 Pkg | DVH6744 168-801 Pkg | DVH6764 168-801 Pkg | DVH6794 168-801 Pkg DVH3811 = 130-011 Pkg | DVH3812 130-011 Pkg | DVH3813 130-011 Pkg | DVH3814 130-011 Pkg DVH3821 =. 247-001 Pkg | DVH3822 247-001 Pkg | DVH3823 247-001 Pkg | DVH3824 247-001 Pkg Suffix Qa, Q Q? Q,? C,,(pF)" | Number Crof Crag 50 MHz Ci fC,,4, | 50 MHz Cr Cre 50 MHz Cre! Cra0 50 MHz 0.4 01 2.2 5000 2.3 3000 0.6 02 2.7 5000 2.8 3000 0.8 03 3.2 4800 3.3 2800 3.8 2100 42 1000 1.0 04 3.5 4800 3.9 2800 43 2100 47 1000 1.2 0& 3.8 4600 4.3 2600 46 2100 5.2 900 15 07 40 4400 46 2400 5.1 2000 5.7 900 1.8 08 41 4200 49 2300 .4 2000 6.2 900 2.2 09 41 4000 5.1 2200 5.6 2000 6.5 850 2.7 10 4.2 3800 5.2 2200 5.8 1900 6.8 850 3.3 11 42 3600 5.3 2100 6.0 1800 7.1 850 3.9 13 4.2 3400 5.4 2000 6.2 1700 7.3 800 47 14 4.2 3200 5.4 2000 6.4 1600 7.5 800 5.6 15 4.3 3000 5.5 1900 6.6 1500 77 800 6.8 16 43 2800 5.6 1800 6.7 1400 78 750 8.2 17 43 2600 5.7 1700 68 1300 7.9 750 10 19 44 2400 5.8 1600 68 1200 8.0 750 12 20 44 2200 5.8 1500 69 1100 8.1 700 15 21 4.4 2000 5.9 1400 7.0 1000 8.2 700 18 22 4.4 1800 6.0 1300 7.0 1000 22 23 45 1600 6.0 1200 7.0 950 27 25 4.5 1400 6.0 1100 7.0 950 33 26 45 1400 6.0 1000 39 27 45 1200 Notes: 1. Capacitance tolerance is +10% except 420% for 0.4 and 0.6 pF, 009 package diodes measured in shielded holder, C,, = 0.07 pF. 2. Q specified V,=4 V, 50 MHz equivalent from 1 GHz or 100 MHz measurement. 3. Minimum V,, (breakdown voltage) at10 microamps. 4, For 099-001 Packages. 4-5ALPHA IND/ SEMICONDUCTOR 4BE D MM 0585443 9001304 770 MB ALP 7-07-/9 Microwave Tuning Diodes and Chips Extra High Q CVH2000 Series Chips Maximum Ratings Parameter Symbol Value Units Reverse Voltage Va Same as V,,| Volts Device Dissipation at T,=25C 250 mW Operating Temperature| T,, -65 to +150 C Storage Temperature Range Tag -65to +200 | C Ordering Information 2000 Series Example: Desired Chip Specification C, - 4 Volts=8.2 pF V,,=60 Volts Resultant Part Number CVH-2060-17 TYPE CVH2030 TYPE CVH2045 TYPE CVH2060 TYPE CVH2090 CVH2000 30 Volt Series 45 Volt Series 60 Volt Series 90 Volt Series Extra High Q tuning ratio tuning ratio tuning ratio tuning ratio Chips 4:5:1 min 6:1 min 7.5:1 min 8.7:1 min c,-4V Suffix Chip Chip Chip Chip (pF) Number Style Q,* Style Q,?) Style Q,7) Style a7) 0.4 01 150-801 5000 150-801 3000 0.6 02 150-801 5000 150-801 3000 0.8 03 150-801 4800 150-801 2800 150-801 2100 150-801 1000 1.0 04 150-801 4800 150-801 2800 150-801 2100 150-801 1000 1.2 05 150-801 4600 150-801 2600 150-801 2100 150-801 900 1.5 07 150-801 4400 150-801 2400 150-801 2000 150-802 900 1.8 08 150-801 4200 150-801 2300 150-801 2000 150-802 850 2.2 09 150-801 4000 150-801 2200 150-802 2000 150-802 850 27 10 150-801 3800 150-802 2200 150-802 1900 150-802 850 3.3 11 150-802 3600 150-802 2100 150-802 1800 150-802 850 3.9 13 150-802 3400 150-802 2000 150-802 1700 150-802 800 47 14 150-802 3200 150-802 2000 150-802 1600 150-802 800 5.6 15 150-802 3000 150-802 1900 150-802 1500 150-802 800 68 16 150-802 2800 150-802 1800 150-802 1400 150-802 750 8.2 17 150-802 2600 150-802 1700 150-802 1300 150-803 750 10 19 150-802 2400 150-802 1600 150-802 1200 150-803 750 12 20 150-802 2200 150-802 1500 150-803 1100 150-803 700 15 21 150-803 2000 150-803 1400 150-803 1000 150-803 700 18 22 150-803 1800 150-803 1300 150-803 1000 22 23 150-803 1600 150-803 1200 150-803 950 27 25 150-803 1400 150-803 1100 150-803 950 33 26 150-803 1400 150-803 1000 150-805 900 39 27 150-803 1200 150-803 1000 150-805 900 Notes: 1. Capacitance tolerance is +10% except for +20% for suffix numbers 01, 02, and 28. 2. Q specified V,=4 V, 50 MHz equivalent from 1 GHz or 100 MHz measurement. 3. Minimum V,, (breakdown voltage) at 10 microamps. 4. Tuning ratio equals the capacitance at 0 Volts divided by the capacitance at the specified breakdown voltage. 4-6