SPECIFICATION (TENTATIVE) DEVICE NAME ; Power MOSFET TYPE NAME : 2SK263801MR SPEC. No. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co.Ltd CHECKED DWG.NO, fiz Y 0257-R-004a. Construction . Outview . Scope This specifies Fuji power MOSFET 25K 2638-0 1MR . Application TO-220F . Absolute maximum ratings for switching Outview See to 5/12 page N-channel enhancement mode power MOSFET at Tc=25C (unless otherwise specified) Description Symbol | Characteristics [| Unit Remarks Drain-source voltage Vos 450 V Continuous Drain current lo = 10 A Pulsed drain current | oputee = 40 A Gate-source voltage Vas = 30 V Repetitive or non-repetitive| | ar 10 A TchsS 150C Avalanche energy Eas 86. 2 mJ | See page 12/12 xX Maximum power dissipation Po 50 W Operating and storage Toh 150 *C temperature range T ate -55 ~ +150 C 6. Electrical characteristics Static ratings *% Lat. 58mH, Vec=45V at Tc#25C (unless otherwise specified) Characteristics Description Symbo | Conditions Unit Min. Typ, Max. Drain-source lo =I1mA breakdown voltage | B Voss | Vos=OV 450 V Gate threshold lo =1mA voltage Vas(th) | Vos=Ves 3.5 4.0 4.5 V Zero gate voltage Foss Vos 450V | Tent 25C 10 500 nA drain current Ves= OV | oss T en=l25C 0.2 1.0 mA Gate-sourc Ves230V leakage current Gss Vos= OV 10 100 nA Drain-source on- lo = 5A state resistance Ros(on) | Ves=10 V 0.58] 0.65 Q we . . Z Fuji Electric Co,Ltd. g Ho 0257- R-003aDynamic ratings Characteristics Description Symbo | Conditions Unit Min. Typ. Max. . Forward ln = 5A transconductance gis Vos=25 V 3. 0 6.0 5 Input capacitance | Ciss 950 1450 pF V os =25V Output capacitance | Coss Voes= OV 180 210 pF t =I1MHz Reverse transfer capacitance | Crss 80 120 pF t d(on) 25 40 ns Turn-on time co =300V tr Voes= 10V 10 110 ns lo = 10A td(off) | Res= 10Q 70 110 ns Turn-off time tf 50 80 ns Reverse dicde Characteristics Description Symboa | Conditions Unit Min. Typ. Max. Avalanche L=100 42H, Ten=25C capabi lity lav * See Figl and 2 10 A Diode forward le =2% | or on-vol tage Vso Ves=OV, Ten=250 1.1 1.65 V Reverse recovery le =lor time tere Ves =0V 400 ns -dl-/dt=100A/us Reverse recovery Ten =25C6 charge Q-- 5.0 ut . Thermal resistance Characteristics Description Symbo| Condi tions Unit Min. Typ. Max. R then-c 2.5 | C/W Therma! resistance Rthen-a 62.5 | C/W Fuji Electric Co,Ltd. 3 Wii Y 0257-R-003aFig.1 Jest circuit 9 L | al | ke D.U.T , tL e Vec Se Vec=1/10 4 Ves L= 100uH 1 pulse 777 PIT C77 Fig.2 Operating waveforms 0 Ves AYV Vos 0 lo Fuji Electric Co Lid. z Ay. Y 0257-R-003aFUJI POWER MOS FET TYPE : 2SK2638-OIMR Note 1. Guaranteed mark of avalanche ruggedness. 100.5 ve 4 520.2, o2 ; 2.7402 _ 2 | | oe hr rm ds ee Trade- . Mark cv -@ CS 0 = | \ me) a 7 Type vi 2 Name Z 4 & oi | = K?5638 Note. 0783 Lot No. ae la ] 7) 1.2%0.2 > a eel Ee 0 "4 | ff |B Bf jyes02 S Il Ee Ys nO | | oi 0.740.2 0.6 *3? 2.54+40.2 | | |. 254402 2.740.2 | T O CONNECTION , @) DRAIN @ SouRCcE DIMENSIONS ARE IN MILLIMETERS. BiG NO. Fuji Electric Co.,Ltd. Sf = 2 = fone 6257-R-003ai Power Dissipation PD=f (Tc) 70 PD [W) 0 a 50 100. +150 Te [C] Safe operating area ID=f (VDS) :D=0. 01, Tc=25C tee ntaneenap scenes ID [A] 10 SEES 107! Ps ie: A Po 10 10! 102 10 VBS [V] Fuji Electric Co.,Ltd. DAG. NO SS NM Y 0257-R-003a1 Typical output characteristics ID=f (VDS) :80us pulse test, Tc=25C 30 iD [A] 5 SVE ov 0 10 20 VDS [V] Typical transfer characteristic {D=f (VGS) :80us pulse test, VDS=25V, Tch=25C 1D [AJ VGS [V] Fuji Electric Co.,Ltd. DWG. NO. Vi 0257-R-003aTypical forward transconductance efs=f (iD) :80us pulse test, VDS=25V, Tch=25C cedawintuinns ee eee efs [s] 10 ot 107! 10 10! D fA] Typical drain-source on-state resistance RDS (on) =F (1D): 80us pulse test, Te=25C 5 I : : : po: : : : VGS=-" chebeseedeeneebenenaconns| i anes senses daneateseeatenss i : sy" vay] eS 4 eft s wv = 2 ; a 0 0 5 10 15 20 25 ID [A] . s | Fuji Electric Co.,Ltd. g cy, a Y 0257-R-003aDrain-source on-state resistance RDS (on) =f (Tch) : 1D=5A, VGS=10V RDS (on) [2] -50 0 50 100 150 Tch [C] Gate threshold voltage VG@S (th) =f (Tch) : [D=1mA, VDS=VGS 6.09 Seo eo VG$ (th) [] 0. 0 50 9 50 100 150 2 OHG. NO. Fuji Electric Co.,Ltd. Y 0257-R-003aTypical gate charge characteristic VGS=f (Qg) : |D=10A, Tc=25C 400 t cc=360 350 300 250) 95 40 60 80 100 120 Qg [nC] Typical capacitances C=f (VDS) :VGS=0V, FT=1tMHz 107! 10 VBS [V] Fuji Electric Co.,Ltd. Vit 0257-R-003aForward characteristic of reverse of diode us pules te |F=f (VSD) : 80 10" ox 1 0 mn IF [A] | 0"! a 00 0.2 0 Transient thermal Zthch=f (t) parameter :D=t/T 4 06 08 1.0 VSD [V] impedande 10! oS oO Zthch-c [K/W] 1971 10.02. 1074 107 3 107? 107! 10 10! Fuji Electric Co.,Ltd. ONG. NO. A Y 0257-R-003ai Eas [mJ] Avalanche energy derating 100 Eas=f (starting Tch) :Vec=45V, | ,y=10A 0 60 499 Starting Toh [C] 150 DWG. NO. Fuji Electric Co.,Ltd. {2 12 Y 0257-R-003a