M2716-1F1 - STMicroelectronics - Datasheet.Directory

AI00784B

A0-A10 Q0-Q7

VCC

M2716

VSS

VPP

Fig ure 1. L og ic Diag ra m

M2716

NMOS 16K (2K x 8) UV EPROM

2048 x 8 ORGANIZATION

525mW Max AC TIVE POW E R, 132mW M a x

STANDBY POWER

ACC ESS TIM E:

– M2716-1 is 350ns

– M2716 is 450ns

SINGLE 5V SUPPL Y VOLTAGE

ST ATIC-NO CLOCKS REQUIRED

INPUT S and OUTP UT S TT L COMPATIBLE

D URING BOTH REA D and PROGR AM

MODES

THREE-STATE OU TPUT with TIED-OR-

CAPABILITY

EXTENDED TEMPERATURE RANGE

PROGRAMMING VOLTAGE: 25V

DESCRIPTION

The M2716 is a 16,384 bit UV erasable and elec-

trically programmable memory EPROM, ideally

suited for applications where fast turn around and

pattern experimentation are important require-

ments.

The M2716 is housed in a 24 pin W indow Ceramic

Frit-Seal Dual-in-Line package. The transparent lid

allows the user to expose the chip to ultraviolet light

to eras e the bit pattern. A new pattern can then b e

w ritten t o the devic e by following the programm i ng

procedure.

A0 - A10 Address Inputs

Q0 - Q7 Data Outputs

EP Chip Enable / Program

G Output Enable

VPP Program Supply

VCC Supply Voltage

VSS Ground

Table 1. Sign al Names

FDIP24W (F)

July 1994 1/9

VSS

A10

VPP

VCC

AI00785

M2716

A5 A9

Fi gure 2. DIP Pin Connecti o ns

Symbol Parameter Value Unit

TAAmbient Operating Temperature grade 1

grade 6 0 to 70

–40 to 85 °C

TBIAS Temperature Under Bias grade 1

grade 6 –10 to 80

–50 to 95 °C

TSTG Storage Temperature –65 to 125 °C

VCC Supply Voltage –0.3 to 6 V

VIO Input or Output Voltages –0.3 to 6 V

VPP Program Supply –0.3 to 26.5 V

PDPower Dissipation 1.5 W

Note: Except for the rat ing "Operating Temperature Range", stresses a bove those l ist ed in the Table "Absolute Max imum Rati ngs " may cause

permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those

indi cated in the Operating sect ions of t hi s specification is not implied. Expos ure to Absolut e Maximum Rati ng conditions for extended periods

may affect device reliability. Refer also t o the SGS-THOMSON SURE Program and other relevant quality documents.

Table 2. Absol ute Maxim um Ratin g s

DEVI CE OPERATION

The M2716 has 3 modes of operation in the normal

sys tem environment. T hese are show n in Table 3.

Read Mode. The M2716 read operation requires

that G = VIL, EP = VIL and that addresses A0-A10

have b een stabilized. Valid data will appear on th e

output pins after time tAVQV, tGLQV or tELQV (see

Switching Time Waveforms) depending on which is

limiting.

Deselect Mode. The M2716 is deselected by mak-

ing G = VIH. This mode is independe nt of EP and

the condition of the addresses. The outputs are

Hi-Z when G = VIH. This allows tied-OR of 2 or more

M2716’s for memory expansion.

Standby Mode (Power Down). The M2716 may

be powered down to the standby m ode by mak ing

EP = VIH. This is indep endent of G and automat-

ically put s the o utputs in the Hi- Z state. The power

is reduced to 25% (132 mW max) of the normal

operating power. V CC and VPP must be maint ained

at 5V . Access time at power up remains either tAVQV

or tELQV (see Sw itching T i m e W avefor ms ).

Programming

The M2716 is shipped from SGS-THOMSON com-

pletely erased. All bits will be at “1" level (output

high) in this initial state and after any full erasure.

Table 3 shows the 3 programming modes.

Program Mode. The M2716 is programmed by

introducing “0"s into the desired locations. This is

done 8 bits (a byte) at a time. Any individual address,

se q uent i a l ad d res s es , or a dd re ss es c hos en at ra n-

dom may be programmed. Any or all of the 8 bits

associated with an address location may be pro-

grammed with a single program pulse applied to the

EP pin. All input voltage levels including the program

puls e on chip enable are TTL compatibl e.

The programming sequence is: with VPP = 25V , VCC

= 5V, G = VIH and EP = VIL, an addres s is select e d

and the desired data word is applied to the output

pins (VIL = “0" and VIH = ”1" for both address and

data). After the address and data signals are stable

the program pin is pulsed from VIL to VIH with a

2/9

M2716

pulse width between 45ms and 55ms. Multiple

pulses are not needed but will not cause device

damage. No pins should be left open. A high level

(VIH or higher) must not b e maintained longer t ha n

tPHPL (max) on the program pin during program-

ming. M2716’s may be programmed in parallel in

this mode.

Program Verify Mode. The programming of the

M2716 may be verified either one byte at a time

during the program ming (as shown in Figure 6) or

by reading all of the bytes out at the end of the

programming sequence. This can be done with

VPP = 25V or 5V in either case. VPP must be at 5V

for all operating modes and can be maintained at

25V for all programming modes.

Pro gram In hibi t Mode. The program inhibit m o de

allows several M2716’s to be programmed simul-

taneously with different data for each one by con-

trolling which ones receive the program pulse. All

similar inputs of the M2716 may be paralleled.

Pulsing the program pin (from VIL to VIH) will pro-

gram a unit while inhibiting the program pulse to a

unit will keep it from being programmed and keep-

ing G = VIH will put it s outputs in the Hi-Z state.

ERAS URE O PER ATIO N

The M2716 is erased by expos ure to high intensity

ultraviolet light through the transparent window.

This exposure discharges the floating gate to its

initial state through induced photo current. It is

recommended that the M2716 be kept out of direct

sunlight. The UV content of s unlight may cause

a partial eras ure of some bit s in a relativ ely short

period of tim e.

An ultraviolet source of 2537 Å yielding a total

integrated dosage of 15 watt-seconds/cm 2 power

rating is used. The M2716 to be erased sh ould be

placed 1 inch away from the lamp and no filters

should be used.

An erasure system should be calibrated peri-

odically. The erasure time is increased by the

square of the distance (if the distance is doubled

the erasure time goes up by a factor of 4) . Lamps

lose intensity as they age, it is therefore important

to periodic ally c heck t hat t he U V s ys tem is in good

order.

This will ensure that the EPROMs are being com-

pletely erased. Incomplete erasure will cause

symptoms that can be misleading. Prog rammers,

components , and system designs have been erro-

neously suspected when incomplete erasure was

the basic problem.

DEVI CE OPERATION (cont’d)

Mode EP GV

PP Q0 - Q7

Read VIL VIL VCC Data Out

Program VIH Pulse VIH VPP Data In

Verify VIL VIL VPP or VCC Data Out

Program Inhibit VIL VIH VPP Hi-Z

Deselect X VIH VCC Hi-Z

Standby VIH XV

CC Hi-Z

Note: X = VIH or VIL.

Table 3. Operating Modes

3/9

M2716

AI00827

2.4V

0.45V

2.0V

0.8V

Figure 3. AC Test ing Input O utp ut W avefo r m s

Input Rise and Fall Times ≤ 20ns

Input Pulse Voltages 0.45V to 2.4V

Input and Output Timing Ref. Voltages 0.8V to 2.0V

AC MEASUREMENT CONDITIONS

AI00828

1.3V

OUT

CL = 100pF

CL includes JIG capacitance

3.3kΩ

1N914

DEVICE

UNDER

TEST

Fi gure 4. AC Testing Load Ci rcui t

Note that Output Hi-Z is defined as the point where data

is no longer driven.

Symbol Parameter Test Condition Min Max Unit

CIN Input Capacitance VIN = 0V 6 pF

COUT Output Capacitance VOUT = 0V 12 pF

Note: 1. Sampled only, not 100% tested.

Table 4. Cap acit ance (1) (TA = 2 5 °C, f = 1 MHz )

Symbol Parameter Test Condition Min Max Unit

ILI Input Leakage Current 0 ≤ VIN ≤ VCC ±10 µA

ILO Output Leakage Current VOUT = VCC, EP = VCC ±10 µA

ICC Supply Current EP = VIL, G = VIL 100 mA

ICC1 Supply Current (Standby) EP = VIH, G = VIL 25 mA

IPP Program Current VPP = VCC 5mA

IL Input Low Voltage –0.1 0.8 V

VIH Input High Voltage 2 VCC + 1 V

VOL Output Low Voltage IOL = 2.1mA 0.45 V

VOH Output High Voltage IOH = –400µA 2.4 V

Note: 1. VCC must be applied simultaneously with or before VPP and removed simult aneously or after VPP.

Table 5. Read Mode DC Characteristi cs (1)

(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)

4/9

M2716

AI00786

tAXQX

tEHQZ

DATA OUT

A0-A10

Q0-Q7

tAVQV

tGHQZ

tGLQV

tELQV

VALID

Hi-Z

Figure 5. Read Mod e AC Waveforms

Symbol Alt Parameter Test Condition M2716 Unit

-1 blank

Min Max Min Max

tAVQV tACC Address Valid to Output Valid EP = VIL, G = VIL 350 450 ns

tELQV tCE Chip Enable Low to Output Valid G = VIL 350 450 ns

tGLQV tOE Output Enable Low to Output Valid EP = VIL 120 120 ns

tEHQZ (2) tOD Chip Enable High to Output Hi-Z G = VIL 0 100 0 100 ns

tGHQZ (2) tDF Output Enable High to Output Hi-Z EP = VIL 0 100 0 100 ns

tAXQX tOH Address Transition to Output Transition EP = VIL, G = VIL 00ns

Notes: 1. VCC must be applied simultaneously with or before VPP and removed simult aneously or after VPP.

2. Sampled only, not 10 0% tested.

Table 6. Read Mo de AC Charact eristi cs (1)

(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)

Symbol Parameter Test Condition Min Max Unit

ILI Input Leakage Current VIL ≤ VIN ≤ VIH ±10 µA

ICC Supply Current 100 mA

IPP Program Current 5 mA

IPP1 Program Current Pulse EP = VIH Pulse 30 mA

VIL Input Low Voltage –0.1 0.8 V

VIH Input High Voltage 2 VCC + 1 V

Note: 1. VCC must be applied simultaneously with or before VPP and removed simult aneously or after VPP.

Table 7. Program ming Mode DC Characterist ics (1)

(TA = 25 °C; V CC = 5V ± 5%; VPP = 25V ± 1V)

5/9

M2716

Symbol Alt Parameter Test Condition Min Max Units

tAVPH tAS Address Valid to Program High G = VIH 2µs

tQVPH tDS Input Valid to Program High G = VIH 2µs

tGHPH tOS Output Enable High to Program

High 2µs

tPL1PL2 tPR Program Pulse Rise Time 5 ns

tPH1PH2 tPF Program Pulse Fall Time 5 ns

tPHPL tPW Program Pulse Width 45 55 ms

tPLQX tDH Program Low to Input Transition 2 µs

tPLGX tOH Program Low to Output Enable

Transition 2µs

tGLQV tOE Output Enable to Output Valid EP = VIL 120 ns

tGHQZ tDF Output Enable High to Output Hi-Z 0 100 ns

tPLAX tAH Program Low to Address Tr ansition 2 µs

Notes: 1. VCC must be applied simultaneously with or before VPP and remov ed si multaneously or aft er VPP.

2. Sampled only, not 100% tested.

Table 8. Prog rammi ng Mode AC Ch aracteri stics (1)

(TA = 25 °C; VCC = 5V ± 5%; VPP = 25V ± 1V)

AI00787

tGLQV

PROGRAM

DATA IN

A0-A10

Q0-Q7 DATA OUT

tAVPH

tQVPH

tGHPH

tPLQX

tPLGX

tPHPL

tPLAX

tGHQZ

VERIFY

VALID

Figure 6. Progr ammi ng and Verify Modes AC W avefo r ms

6/9

M2716

Speed and VCC T olerance

-1 350 ns, 5V ±10%

blank 450 ns, 5V ±5%

Package

F FDIP24W

Temperature Range

1 0 to 70 °C

6 –40 to 85 °C

Exam ple: M2716 -1 F 1

OR D ERI NG I NF OR MATION S CH EM E

For a list of available options (Speed, VCC T olerance, Package, etc...) refer to the current Memory Shortform

catalogue.

For fur ther information on any aspect of this device, please contact S GS-THOM SON Sales O ffice nearest

to you.

7/9

M2716

FDIPW-a

B1 B e1

E1 E

CαeA

∅

Symb mm inches

Typ Min Max Typ Min Max

A 5.71 0.225

A1 0.50 1.78 0.020 0.070

A2 3.90 5.08 0.154 0.200

B 0.40 0.55 0.016 0.022

B1 1.17 1.42 0.046 0.056

C 0.22 0.31 0.009 0.012

D 32.30 1.272

E 15.40 15.80 0.606 0.622

E1 13.05 13.36 0.514 0.526

e1 2.54 – – 0.100 – –

e3 27.94 – – 1.100 – –

eA 16.17 18.32 0.637 0.721

L 3.18 4.10 0.125 0.161

S 1.52 2.49 0.060 0.098

∅7.11 – – 0.280 – –

α4°15°4°15°

N24 24

FDIP24W

Drawing is not to scale

FDIP24W - 24 pin Ceramic Frit-seal DIP, with window

8/9

M2716

Information furnished is believed to b e accurate an d r eliable. However, SGS-THOMSON Microelectronics assumes no responsibility fo r the

consequences of use o f such information nor for any infringement of patents or other rights of third parties which may result from its use. No

license is granted by implication or ot herwise under any patent o r pat ent rights of SGS-THOMSON Microelect ronic s. Specif ications mentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express

written approval of SGS-THOMSON Mic roelectronics .

SGS-THOMSON Microelect ro nics GROUP OF COMPANIES

Australia - Brazil - China - France - Germany - Hong Kong - Italy - J apan - Korea - Malaysia - Malt a - Morocco - Th e Netherlan ds -

Singapore - Spain - S weden - Switz erland - Taiwan - Thailand - United Kingdom - U.S.A.

9/9

M2716