4N38X, 4N38AX 4N38, 4N38A OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01..22 Semko - Reference No. 9620076 01 Demko - Reference No. 305567 Dimensions in mm 2.54 7.0 6.0 1 2 6 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 3.35 0.26 DESCRIPTION The 4N38, 4N38A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High BVCEO (80V min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 80V 80V 6V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB90047m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 1.2 10 V V A IF = 10mA IR = 10A VR = 6V Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) 80 V IC = 1mA 80 6 V V nA nA IC = 100A IE = 100A VCE = 60V VCE = 60V Current Transfer Ratio (CTR) 20 % 10mA IF , 10V VCE V 20mA IF , 4mA IC VRMS VPK See note 1 See note 1 VIO = 500V (note 1) s s VCC = 10V , IC= 2mA, RL = 100 ( FIG 1) 50 20 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 1.0 5300 7500 Input-output Isolation Resistance RISO 5x1010 Turn-on Time Turn-off Time Note 1 Note 2 1.5 TEST CONDITION ton toff 5 5 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 100 tr Output tf Output 10% 10% 90% 90% FIG 1 7/12/00 DB90047m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 2.8 Relative current transfer ratio Collector power dissipation P C (mW) 200 150 100 50 2.4 2.0 1.6 1.2 0.8 VCE = 1V TA = 25C 0.4 0 0 -30 0 25 50 75 100 1 125 2 5 10 20 50 Forward current IF (mA) Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 80 1.4 Relative current transfer ratio Forward current I F (mA) 70 60 50 40 30 20 10 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25C 0.2 0 25 50 75 100 125 5 10 20 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature (V) Forward current IF (mA) IF = 10mA VCE = 10V 1.0 0.5 -30 2 Ambient temperature TA ( C ) 0 7/12/00 1 0 25 50 75 Ambient temperature TA ( C ) 100 Collector-emitter saturation voltage V 1.5 Relative current transfer ratio 0 CE(SAT) -30 50 0.28 0.24 IF = 20mA IC = 4mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB90047m-AAS/A1