IRANSYS ELECTRONICS 2N7002LT1 LIMITED 3 DRAIN FET Transistor N-Channel Enhancement GATE ; 2. SOURCE BQ Sg MAXIMUM RATINGS 5 Rating Symbol Value Unit SOT-23 Drain-Source Voltage Vpss 60 Vdc DrainGate Voltage (R@g = 1.0 MQ) VDGR 60 Vde Drain Current Continuous Tc = 25C ID +115 mAdc Continuous Tc = 100C ID +75 Current Pulsed(2) IDM +800 Gate-Source Voltage Continuous Ves +20 Vde Non-repetitive (tp < 50 ys) VGSM +40 Vpk THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,(3) Ta = 25C Pp 225 mW Derate above 25C 1.8 mWw/C Thermal Resistance, Junction to Ambient ReJA 556 C/W Total Device Dissipation Pp 300 mw Alumina Substrate, (4) Ta = 25C Derate above 25C 2.4 mw/rc Thermal Resistance, Junction to Ambient ReJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING | 2N7002LT1 = 702 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) | Characteristic Symbol Min Typ | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 _ _ Vdc (Vqas = 9, Ip = 10 pAdc) Zero Gate Voltage Drain Current Ty = 25C IDSs 1.0 pAdc (Vas = 0, Vps = 60 Vdc) Ty = 125C 500 GateBody Leakage Current, Forward IGSSF _ _ 100 nAdc (Vqgs = 20 Vdc) Gate-Body Leakage Current, Reverse IGSsSR _ _ 100 nAdc (Vqs = 20 Vdc) . The Power Dissipation of the package may result in a lower continuous drain current. 1 2. Pulse Test: Pulse Width < 300 is, Duty Cycle < 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.2N7002LT1 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(2) Gate Threshold Voltage VGS(th) 1.0 _ 2.5 Vde (VDs = V@s, Ip = 250 wAdc) On-State Drain Current ID(on) 500 _ _ mA (Vps 2 2.0 Vps(on). VGs = 10 Vde) Static Drain-Source On-State Voltage VDS\(on) Vde (Vas = 10 Vde, Ip = 500 mAdc) 3.75 (Vas = 5.0 Vde, Ip = 50 mAdc) 0.375 Static Drain-Source On-State Resistance DS(on) Ohms (Vas =10V, lp =500mAdc) Te = 25C _ _ 75 Toe = 125C 13.5 (Vqs = 5.0 Vde, Ip = 50 mAdc) Tc = 25C 7.5 Toe = 125C 13.5 Forward Transconductance OFS 80 _ _ mmhos (VDs 2 2.0 Vps(on); ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Ciss _ _ 50 pF (Vps = 25 Vde, Vas = 0, f= 1.0 MHz) Output Capacitance Coss _ _ 25 pF (Vps = 25 Vde, Vas = 0, f= 1.0 MHz) Reverse Transfer Capacitance Crgg 5.0 pF (Vps = 25 Vde, Vas = 0, f= 1.0 MHz) SWITCHING CHARACTERISTICS(2) TurnOn Delay Time (Vpp = 25 Vdc, ID = 500 mAdc, td(on) _ _ 20 ns Turn-Off Delay Time RG = 25 Q, RL = 50 Q, Vgen = 10 V) ta(off) _ _ 40 ns BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage Vsp _ _ -1.5 Vdc (Ig = 11.5 mAdc, Vag = 0 V) Source Current Continuous Is 115 mAdc (Body Diode) Source Current Pulsed ISM _ _ 800 mAdc 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.Ip, DRAIN CURRENT (AMPS) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(on) 2.0 18 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 -60 2N7002LT1 Ip, DRAIN CURRENT (AMPS) 10 20 30 40 50 60 70 80 90 10 0 10 20 30 40 50 60 70 80 90 10 Vps, DRAN SOURCE VOLTAGE (VOLTS) Vag, GATE SOURCE VOLTAGE (VOLTS) Figure 1. Ohmic Region Figure 2. Transfer Characteristics a 12 N = 1.05 Veg =10V = 44 Ip = 200 mA S| = 1.10 o xf. = 1.0 2 095 a a 09 x= tu 0.85 oc F 08 =e B 0.75 > 07 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140 T, TEMPERATURE (C) T, TEMPERATURE (C) Figure 3. Temperature versus Static Figure 4. Temperature versus Gate Drain-Source On-Resistance Threshold VoltagePACKAGE DIMENSIONS 2N7002LT1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2, CONTROLLING DIMENSION: INCH. <_ A 3, MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE yy | MATERIAL. STYLE 21: SOT-23 PIN1. GATE 2. SOURCE 3. DRAIN