NTE5562, NTE5564, NTE5566
Silicon Controlled Rectifiers (SCR)
35 Amp, TO48 Isolated Stud
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO−48 isolated stud
TO−48 type package designed for industrial and consumer applications such as power supplies, bat-
tery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM
NTE5562 200. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5564 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5566 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On−State Current (TC = +75°C), IT(RMS) 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge (Non−Repetitive) On−State Current, ITSM 300A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate−Trigger Current (3μs Max), IGTM 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate−Power Dissipation (IGT ≤ for 3μs Max), PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, PG(AV) 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Toper −40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction−to−Case, RthJC 1.6/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off−State Current IDRM,
IRRM
TJ = +100°C, Gate Open, VDRM &VRRM − − 2.0 mA
Maximum On−State Voltage (Peak) VTM TC = +25°C− − 1.6 V
DC Holding Current IHO TC = +25°C, Gate Open − − 50 mA
DC Gate Trigger Current IGT Anode Voltage = 12Vdc, RL = 30Ω,
TC =+ 25°C
− − 30 mA
DC Gate Controlled Turn−On Time TGT IGT = 150mA , tD+tR−2.5 −μs
Critical Rate of Rise of Off−State Voltage Critical
dv/dt
TC = +100°C, Gate Open −100 −V/μs
.562
(14.28)
Max
1.260
(32.0)
Max
.445
(11.3)
Max
.595
(15.1)
Max
Cathode
Anode
Gate
1/4−28 UNF−2A
Isolated Stud
