NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR) 35 Amp, TO48 Isolated Stud Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO-48 isolated stud TO-48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage & Reverse Voltage (TJ = +100C), VDRM, VRRM NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +75C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Peak Surge (Non-Repetitive) On-State Current, ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A Peak Gate-Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Peak Gate-Power Dissipation (IGT for 3s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Temperature Range, Toper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Symbol Test Conditions Min Typ Peak Off-State Current IDRM, IRRM TJ = +100C, Gate Open, VDRM &VRRM - - 2.0 mA Maximum On-State Voltage (Peak) VTM TC = +25C - - 1.6 V DC Holding Current IHO TC = +25C, Gate Open - - 50 mA DC Gate Trigger Current IGT Anode Voltage = 12Vdc, RL = 30, TC =+ 25C - - 30 mA DC Gate Controlled Turn-On Time TGT IGT = 150mA , tD+tR - 2.5 - s TC = +100C, Gate Open - 100 - V/s Critical Rate of Rise of Off-State Voltage Critical dv/dt Max Unit .562 (14.28) Max Cathode Anode Gate 1.260 (32.0) Max .595 (15.1) Max .445 (11.3) Max 1/4-28 UNF-2A Isolated Stud