BZX84B5V1LT1, BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT-23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. 3 Cathode Specification Features: 225 mW Rating on FR-4 or FR-5 Board Zener Breakdown Voltage Range - 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model Tight Tolerance Series Available (See Page 4) 3 1 2 SOT-23 CASE 318 STYLE 8 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL94 V-0 xxx MAXIMUM RATINGS Rating Total Power Dissipation on FR-5 Board, (Note 1) @ TA = 25C Derated above 25C Thermal Resistance - Junction-to-Ambient Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25C 25 C Derated above 25C Thermal Resistance - Junction to Ambient Junction and Storage Temperature Range Symbol 1 Anode Max Unit 225 18 1.8 556 mW mW/C C/W M * * * * * * http://onsemi.com xxx = Specific Device Code M = Date Code PD RJA PD RJA TJ, Tstg 300 2.4 417 mW mW/C C/W -65 to +150 C 1. FR-5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. ORDERING INFORMATION Device Package Shipping BZX84CxxxLT1 SOT-23 3000/Tape & Reel BZX84CxxxLT3 SOT-23 10,000/Tape & Reel BZX84BxxxLT1 SOT-23 3000/Tape & Reel BZX84BxxxLT3 SOT-23 10,000/Tape & Reel DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. The "T1" suffix refers to an 8 mm, 7 inch reel. The "T3" suffix refers to an 8 mm, 13 inch reel. Semiconductor Components Industries, LLC, 2003 September, 2003 - Rev. 4 1 Publication Order Number: BZX84C2V4LT1/D BZX84B5V1LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ C IF VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz http://onsemi.com 2 V BZX84B5V1LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS - BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) VZ2 (V) @ IZT2 = 1 mA (Note 3) Device Device Marking Min Nom Max ZZT1 () @ IZT1 = 5 mA Min Max ZZT2 () @ IZT2 = 1 mA BZX84C2V4LT1 Z11 2.2 2.4 2.6 100 1.7 2.1 600 BZX84C2V7LT1 Z12 2.5 2.7 2.9 100 1.9 2.4 BZX84C3V0LT1 Z13 2.8 3 3.2 95 2.1 2.7 BZX84C3V3LT1 Z14 3.1 3.3 3.5 95 2.3 BZX84C3V6LT1 Z15 3.4 3.6 3.8 90 BZX84C3V9LT1 Z16 3.7 3.9 4.1 90 BZX84C4V3LT1 W9 4 4.3 4.6 BZX84C4V7LT1 Z1 4.4 4.7 BZX84C5V1LT1 Z2 4.8 5.1 BZX84C5V6LT1 Z3 5.2 5.6 BZX84C6V2LT1 Z4 5.8 BZX84C6V8LT1 Z5 6.4 BZX84C7V5LT1 Z6 BZX84C8V2LT1 BZX84C9V1LT1 VZ3 (V) @ IZT3 = 20 mA (Note 3) Max Reverse Leakage Current VZ (mV/k) @ IZT1 = 5 mA Min Max ZZT3 () @ IZT3 = 20 mA Min Max C (pF) @ VR = 0 f = 1 MHz 2.6 3.2 50 50 1 -3.5 0 450 600 3 3.6 50 20 1 -3.5 0 450 600 3.3 3.9 50 10 1 -3.5 0 450 2.9 600 3.6 4.2 40 5 1 -3.5 0 450 2.7 3.3 600 3.9 4.5 40 5 1 -3.5 0 450 2.9 3.5 600 4.1 4.7 30 3 1 -3.5 -2.5 450 90 3.3 4 600 4.4 5.1 30 3 1 -3.5 0 450 5 80 3.7 4.7 500 4.5 5.4 15 3 2 -3.5 0.2 260 5.4 60 4.2 5.3 480 5 5.9 15 2 2 -2.7 1.2 225 6 40 4.8 6 400 5.2 6.3 10 1 2 -2.0 2.5 200 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 IR A @ VR Volts BZX84C10LT1 Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 BZX84C11LT1 Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 BZX84C12LT1 Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 BZX84C13LT1 Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 BZX84C15LT1 Y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 BZX84C16LT1 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 BZX84C18LT1 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1 Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1 Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1 Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 VZ1 Below @ IZT1 = 2 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA BZX84C27LT1 Y10 25.1 27 28.9 BZX84C30LT1 Y11 28 30 32 BZX84C33LT1 Y12 31 33 35 BZX84C36LT1 Y13 34 36 BZX84C39LT1 Y14 37 39 BZX84C43LT1 Y15 40 BZX84C47LT1 Y16 BZX84C51LT1 Y17 BZX84C56LT1 VZ2 Below @ IZT2 = 0.1 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA 80 25 28.9 80 27.8 32 80 30.8 38 90 41 130 43 46 44 47 48 51 Y18 52 BZX84C62LT1 Y19 BZX84C68LT1 Y20 BZX84C75LT1 Y21 Device VZ3 Below @ IZT3 = 10 mA Min Max ZZT3 Below @ IZT3 = 10 mA 300 25.2 29.3 45 300 28.1 32.4 50 35 325 31.1 35.4 33.8 38 350 34.1 36.7 41 350 37.1 150 39.7 46 375 50 170 43.7 50 54 180 47.6 54 56 60 200 51.5 58 62 66 215 64 68 72 240 70 75 79 255 Max Reverse Leakage Current VZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 0.05 21 24.4 29.4 70 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 41.5 70 0.05 27.3 33.4 41.2 45 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. http://onsemi.com 3 IR A @ BZX84B5V1LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS - BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ (Volts) @ IZT = 5 mA (Note 4) IR A VZ (mV/k) @ IZT = 5 mA Volts Min Max C (pF) @ VR =0, =0 f = 1 MHz 2 2 -2.7 1.2 225 1 2 -2 2.5 200 10 3 4 0.4 3.7 185 6.94 15 2 4 1.2 4.5 155 7.65 15 1 5 2.5 5.3 140 8.2 8.36 15 0.7 5 3.2 6.2 135 8.92 9.1 9.28 15 0.5 6 3.8 7 130 15.7 16 16.3 40 0.05 11.2 10.4 14 105 17.6 18 18.4 45 0.05 12.6 12.4 16 100 Device Marking Min Nom Max Max BZX84B5V1LT1 T11 5.00 5.1 5.20 60 BZX84B5V6LT1 T12 5.49 5.6 5.71 40 BZX84B6V2LT1 T13 6.08 6.2 6.32 BZX84B6V8LT1 T14 6.66 6.8 BZX84B7V5LT1 T15 7.35 7.5 BZX84B8V2LT1 T16 8.04 BZX84B9V1LT1 T17 BZX84B16LT1 T19 BZX84B18LT1 T20 Device Max Reverse Leakage Current ZZT () @ IZT = 5 mA (Note 4) VR @ 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C http://onsemi.com 4 BZX84B5V1LT1, BZX84C2V4LT1 Series 8 100 7 VZ, TEMPERATURE COEFFICIENT (mV/C) VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C) 1000 IZ = 1 mA 100 TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( ) 1000 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0.6 0C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 5 1.1 1.2 BZX84B5V1LT1, BZX84C2V4LT1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (A) TA = 25C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150C 0.1 0.01 0.001 +25 C 0.0001 -55 C 0.00001 0 10 Figure 5. Typical Capacitance 100 TA = 25C 10 1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 Figure 6. Typical Leakage Current I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 100 20 10 10 1 0.1 0.01 12 TA = 25C 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 6 90 BZX84B5V1LT1, BZX84C2V4LT1 Series PACKAGE DIMENSIONS SOT-23 TO-236AB CASE 318-09 ISSUE AH A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE http://onsemi.com 7 BZX84B5V1LT1, BZX84C2V4LT1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 BZX84C2V4LT1/D