LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 1 of 6
2N3506U4 thru 2N3507AU4
Availa ble on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/349
Qualified Levels:
JAN, JANTX and
JANTXV
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The
U4 package is hermetically sealed and provides a low profile for minimizing board height.
The 'A' version maintains it's forward current transfer ratio, hFE, at low temperature at higher
collector-emitter voltage. These devices also available in TO-5 and TO-39 packages.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
U4 Package
Also available in:
TO-39 package
(leaded)
2N3506 – 2N3507A
TO-5 package
(long-leaded)
2N3506L – 2N3507AL
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3506U4 through 2N3507U4 series.
• RoHS compliant versions available (commercial grade only).
• Vce(sat) = 0.5 V @ Ic = 500 mA
• Rise time tr = 30 ns max @ IC = 1 .5 A, IB1 = 150 mA
• Fall time tf = 35 ns max @ IC = 1 .5 A, IB1 = IB2 = 150 mA
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3506U4 2N3507U4 Unit
Collector-Emitter Voltage VCEO 40 50 V
Collector-Base Voltage VCBO 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 3.0 A
Total Power Dissipation
@ TA = +25 °C (1)
@ TC = +10 0 °C (2) PD 1.0
5.0 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Notes: 1. Derate linearly 5.71 mW/°C for TA > +25 °C.
2. Vce = 40 V.
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 2 of 6
2N3506U4 thru 2N3507AU4
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid.
• TERMINALS: Gold over nickel plated surface mo unt term ina tions.
• MARKING: Part number, Date Code, Manufacturer’s ID.
• POLARITY: See package dimensions.
• TAPE & REEL option: Standard per EIA-481D.
• WEIGHT: .125 grams (125 milligrams).
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3506 A U4 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = commercial
JEDEC type number
(see Electrical Characteristics
table)
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Maintains hFE @ -55°C
SYMBOLS & DEFINITIONS
Symbol
Definition
C
obo
common-base open-circ uit outp ut capacitance
I
C
collector current, dc
I
CEO
collector cutoff current, base open
I
CEX
collector cutof f current , circuit bet w een base and emitter
IEBO
emitter cutoff current, collector open
hFE
common-emitter static forward current transfer ratio
VBE
base-emitter voltage, dc
VCE
collector-emitter voltage, dc
VCEO
collector-emitter voltage, base open
VCBO
collector-emitter voltage, emitter open
V
EB
emitter-base voltage, dc
V
EBO
emitter-base voltage, collector open
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 3 of 6
2N3506U4 thru 2N3507AU4
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Voltage 2N3506U4
IC = 10 mA 2N3507U4 V(BR)CEO 40
50 V
Collector-Emitter Cutoff Current
ICEX
1.0
1.0
µA
V
CE
= 40 V
V
CE
= 60 V
2N3506U4
2N3507U4
Collector-Base Breakdown Voltage
IC = 100 µA 2N3506U4
2N3507U4 V(BR)CBO
60
80 V
Emitter-Base Breakdown Voltage
IE = 10 µA V(BR)EBO 5 V
ON CHARACTERISTICS (3)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1 V 2N3506U4
2N3507U4 hFE 50
35 250
175
Forward-Current Transfer Ratio
IC = 1.5 A, VCE = 2 V 2N3506U4
2N3507U4 hFE 40
30 200
150
Forward-Current Transfer Ratio
IC = 2.5 A, VCE = 3 V 2N3506U4
2N3507U4 hFE 30
25
Forward-Current Transfer Ratio
IC = 3.0 A, VCE = 5 V 2N3506U4
2N3507U4 hFE 25
20
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1.0 V @ -55 °C 2N3506U4
2N3507U4 hFE 25
17
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 2.0 V @ -55 °C 2N3506AU4
2N3507AU4 hFE 25
17
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VCE(sat) 0.5 V
Collector-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA VCE(sat) 1.0 V
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA VCE(sat) 1.5 V
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VBE(sat) 1.0 V
Base-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA VBE(sat) 0.8 1.3 V
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA VBE(sat) 2.0 V
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 4 of 6
2N3506U4 thru 2N3507AU4
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted)
DYNAMIC CHAR ACTERIST ICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
IC = 100 mA, VCE = 5 V, f = 20 MHz |hfe| 3.0 15
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 40 pF
Input Capacitance
VEB = 3.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 300 pF
SWITCHING CHAR ACTERISTICS (4)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Delay Time
IC = 1.5 A, IB1 = 150 mA td 15 ns
Rise Time
IC = 1.5 A, IB1 = 150 mA tr 30 ns
Storage Time
IC = 1.5 A, IB1 = IB2 = 150 mA ts 55 ns
Fall Time
IC = 1.5 A, IB1 = IB2 = 150 mA tf 35 ns
NOTES: (3) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
(4) Consult MIL-PRF-19500/349 for add itio nal information.
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 5 of 6
2N3506U4 thru 2N3507AU4
GRAPHS
0
1
2
3
4
5
6
25 50 75 100 125 150 175 200 225
===================
Vce = 4V
Vce = 15V
Vce = 60V
===================
Legend
(Top to Bottom)
TC (oC) (Case)
FIGURE 1
Temperature-Power Derating Curve
NOTES: Thermal Resistance Junction to Case = 7.0 oC/W
Case mounted to infinite s i nk.
TIME (s)
FIGURE 2
Maximum Thermal Impedance (RӨJC)
DC Operation Maximum Rating (W)
THETA (oC/W)
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 6 of 6
2N3506U4 thru 2N3507AU4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information
only.
3. In accordance with ASME Y14.5M, diameters are
equivalent to Φx symbology.
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
0.215
0.225
5.46
5.72
BW
0.145
0.155
3.68
3.94
CH
0.049
0.075
1.24
1.91
LH
0.02
0.51
LW1
0.135
0.145
3.43
3.68
LW2
0.047
0.057
1.19
1.45
LL1 0.085 0.125 2.16 3.17
LL2 0.045 0.075 1.14 1.90
LS1 0.070 0.095 1.78 2.41
LS2 0.035 0.048 0.89 1.21
Q1
0.03
0.070
0.76
1.78
Q2
0.02
0.035
0.51
0.88
TERMINAL
1
COLLECTOR
2
BASE
3
EMITTER