SUMMARY
V(BR)DSS= 30V; RDS(ON)= 0.02 ;I
D= 8.5A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•Low profile SOIC package
APPLICATIONS
•DC - DC Converters
•Power Management Functions
•Disconnect switches
•Motor control
DEVICE MARKING
ZXMN
3A04D
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DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH QUANTITY
PER REEL
ZXMN3A04DN8TA 7’‘ 12mm 500 units
ZXMN3A04DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
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PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) RθJA 100 °C/W
Junction to Ambient (b)(e) RθJA 69 °C/W
Junction to Ambient (b)(d) RθJA 58 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 30 V
Gate Source Voltage VGS ⫾20 V
Continuous Drain Current (VGS=10V; TA=25°C)(b)(d)
(VGS=10V; TA=70°C)(b)(d)
(VGS=10V; TA=25°C)(a)(d)
ID8.5
6.8
6.5
A
Pulsed Drain Current (c) IDM 39 A
Continuous Source Current (Body Diode) (b) IS3.6 A
Pulsed Source Current (Body Diode)(c) ISM 39 A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor PD1.25
10 W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor PD1.81
14.5 W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor PD2.15
17.2 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 30 VID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 0.5 µAVDS=30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1.0 VID=250µA, VDS=V
GS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.02
0.03 Ω
ΩVGS=10V, ID=12.6A
VGS=4.5V, ID=10.6A
Forward Transconductance (3) gfs 22.1 SV
DS=15V,ID=12.6A
DYNAMIC (3)
Input Capacitance Ciss 1890 pF VDS=15V, VGS=0V,
f=1MHz
Output Capacitance Coss 349 pF
Reverse Transfer Capacitance Crss 218 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 5.2 ns
VDD =15V, ID=1A
RG=6.0Ω,V
GS=10V
Rise Time tr6.1 ns
Turn-Off Delay Time td(off) 38.1 ns
Fall Time tf20.2 ns
Gate Charge Qg19.9 nC VDS=15V,VGS=5V,
ID=6.5A
Total Gate Charge Qg36.8 nC VDS=15V,VGS=10V,
ID=6.5A
Gate-Source Charge Qgs 5.8 nC
Gate-Drain Charge Qgd 7.1 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.85 0.95 VT
J=25°C, IS=6.8A,
VGS=0V
Reverse Recovery Time (3) trr 18.4 ns TJ=25°C, IF=2.3A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 11 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
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Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uk.sales@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2002
DIM INCHES MILLIMETRES
MIN MAX MIN MAX
A 0.053 0.069 1.35 1.75
A1 0.004 0.010 0.10 0.25
D 0.189 0.197 4.80 5.00
H 0.228 0.244 5.80 6.20
E 0.150 0.157 3.80 4.00
L 0.016 0.050 0.40 1.27
e 0.050 BSC 1.27 BSC
b 0.013 0.020 0.33 0.51
c 0.008 0.010 0.19 0.25
⍜0⬚8⬚0⬚8⬚
h 0.010 0.020 0.25 0.50
PACKAGE DIMENSIONSPACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
