MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54661P and M54661FP are four-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION COM COMMON 16 O4 OUTPUT4 1 15 IN4 INPUT4 OUTPUT1 O1 2 INPUT1 IN1 3 4 13 5 12 GND GND 11 IN3 INPUT3 INPUT2 IN2 6 FEATURES A High breakdown voltage (BV CEO 80V) A High-current driving (Ic(max) = 1.5A) A With clamping diodes A Driving available with NMOS IC output A Wide operating temperature range (Ta = -20 to +75C) VCC 14 NC 10 O3 OUTPUT3 7 OUTPUT2 O2 8 9 COM COMMON 16P4(P) Package type 16P2N-A(FP) NC : No connection CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification VCC Symbol OUTPUT 7K 1K 7.2K FUNCTION The M54661P and M54661FP each have four circuits, which are made of PNP transistors and NPN Darlington transistors. The input has 7k, and a spike-killer clamping diode is provided between the output pin (collector) and COM pin. All output transistor emitters are connected to the GND pin. Collector current is 1.5A maximum. The maximum collectoremitter voltage is 80V. The M54661FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS COM 7K INPUT 3K GND COM, VCC and GND are common for each circuit. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : (Unless otherwise noted, Ta = -20 ~ +75 C) Parameter VCC VCEO Supply voltage Collector-emitter voltage IC VI Collector current Input voltage VR Clamping diode reverse voltage IF Clamping diode forward current Pd Topr Power dissipation Operating temperature Tstg Storage temperature Conditions Output, H Current per circuit output, L Pulse Width 10ms, Duty Cycle 5% Pulse Width 100ms, Duty Cycle 5% Ta = 25C, when mounted on board Ratings 10 -0.5 ~ +80+ Unit V V 1.5 -0.5 ~ +30 A V 80+ 1.5 V 1.25 A W 1.92(P)/1.00(FP) -20 ~ +75 C -55 ~ +125 C + : When output voltage is less than -0.5V, the other circuits are to be used at 50V. Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol Parameter Supply voltage Output voltage Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) VCC VO IC (Unless otherwise noted, Ta = -20 ~ +75C) Limits typ min VCC = 5V, Duty Cycle P : no more than 4% FP : no more than 2% VCC = 5V, Duty Cycle P : no more than 18% FP : no more than 9% 5 6 0 -- 80 0 -- 1.25 0 -- 0.7 -- -- VCC V VCC-3.5 V "H" input voltage VCC -0.5 "L" input voltage 0 (Unless otherwise noted, Ta = -20 ~ +75C) Parameter Limits Test conditions V (BR) CEO Collector-emitter breakdown voltage ICEO = 100A ICC IR Supply current (one circuit coming on) VCC = 6V, V I = 0.5V VCC = 4V, V I = 0.5V, IC = 1.25A Collector-emitter saturation voltage VCC = 4V, V I = 0.5V, IC = 0.7A VI = VCC -3.5V Input current VI = 0V Clamping diode reverse current VR = 80V VF Clamping diode forward voltage IF = 1.25A, VCC open h FE DC amplification factor VCC = 4V, V CE = 4V, I C = 1A, Ta = 25C VCE (sat) II V V A VIL Symbol Unit 4 VIH ELECTRICAL CHARACTERISTICS max Unit min 80 typ+ -- max -- -- 4.6 7.5 mA -- -- -- -- 2.2 1.7 V -- -- -0.6 -- -- -- -0.95 100 -- 2.3 -- -- 4000 -- V mA A V -- -- + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton Parameter Turn-on time Turn-off time toff min CL = 15pF (note 1) Unit typ max -- 170 -- ns -- 4000 -- ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VCC VO Measured device INPUT 50% 50% RL OPEN OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 3.5VP-P(0.5 to 4V) (2) Input-output conditions : RL = 8.3, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 2.0 2.0 VCC = 4V VI = 0.5V Collector current Ic (A) Power dissipation Pd (W) M54661P 1.5 M54661FP 1.0 0.5 0 25 50 75 Ta = 25C 0.5 0 100 1.0 1.5 2.0 Duty-Cycle-Collector Characteristics (M54661P) Duty-Cycle-Collector Characteristics (M54661P) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 0 20 40 60 *VCC = 5V *Ta = 25C 80 1.0 0.5 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54661FP) Duty-Cycle-Collector Characteristics (M54661FP) 2.0 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 25C 1.5 1.0 0.5 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 75C 1.5 0 100 20 40 60 Duty cycle (%) 80 100 Collector current Ic (A) 0.5 Collector current Ic (A) 2.0 1.0 0 0.5 Output saturation voltage VCE (sat) (V) 1.5 0 0 Ta = -20C Ambient temperature Ta (C) 2.0 Collector current Ic (A) 1.0 Ta = 75C 0 Collector current Ic (A) 1.5 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 75C 1.5 1.0 0.5 0 0 20 40 60 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 105 1.6 VCC = 4V VCE = 4V VCC = 4V VCE = 4V 3 2 Collector current Ic (A) DC amplification factor hFE 7 5 Ta = 75C 104 7 5 Ta = 25C 3 2 Ta = -20C 103 7 5 1.2 0.8 Ta = 75C Ta = 25C 0.4 Ta = -20C 3 2 102 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 0 Collector current Ic (mA) 0 0.5 1.0 1.5 2.0 Supply voltage-Input voltage VCC-VI (V) Clamping Diode Characteristics Input Characteristics 2.0 -1.0 Forward bias current IF (A) VCC = 5V Input current II (mA) -0.8 -0.6 Ta = 25C Ta = -20C -0.4 Ta = 75C -0.2 0 0 1 2 3 4 5 Supply voltage-Input voltage VCC-VI (V) 1.5 1.0 Ta = 25C 0.5 Ta = 75C 0 0 0.5 Ta = -20C 1.0 1.5 2.0 Forward bias voltage VF (V) Supply Current Characteristics 10.0 Supply current Icc (mA) VI = 0.5V 8.0 Ta = 25C 6.0 Ta = -20C 4.0 Ta = 75C 2.0 0 0 2 4 6 8 10 Supply voltage VCC (V) Aug. 1999