Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54661P/FP
4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54661P and M54661FP are four-circuit collector-current-
synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
ÁHigh breakdown voltage (BV CEO ≥ 80V)
ÁHigh-current driving (Ic(max) = 1.5A)
ÁWith clamping diodes
ÁDriving available with NMOS IC output
ÁW ide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54661P and M54661FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 7kΩ, and a spike-killer clamping diode is pro-
vided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collector-
emitter voltage is 80V.
The M54661FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
V
A
V
V
W
°C
°C
10
–0.5 ~ +80+
1.5
–0.5 ~ +30
80+
1.5
1.25
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
IFA
+ : When output voltage is less than –0.5V, the other circuits are to be used at 50V.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
VCC
VCEO
IC
VI
VR
Pd
Topr
Tstg
Symbol Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Pulse Width ≤ 10ms, Duty Cycle ≤ 5%
Pulse Width ≤ 100ms, Duty Cycle ≤ 5%
Ta = 25°C, when mounted on board
Ratings Unit
Clamping diode forward current
7K
1K
7.2K 3K
7K
GND
COM
VCC
INPUT OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
COM, VCC and GND are common for each circuit.
1
O1←
IN1→
IN2→
O2←
COM COMMON
V
CC
COM COMMON
NC
GNDGND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O3
←IN3
←IN4
→O4
OUTPUT4
INPUT4
INPUT3
OUTPUT3
OUTPUT1
INPUT1
INPUT2
OUTPUT2
16P4(P)
Package type 16P2N-A(FP)
NC : No connection
Aug. 1999
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54661P/FP
4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
mA
6
80
VCC
VCC–3.5
5
—
—
—
4
0
VCC–0.5
0
V
mA
µA
V
—
Symbol UnitParameter Test conditions Limits
min typ+max
V
V
V
V
IC
0
0
—
—
1.25
0.7 A
VCE (sat)
II
80
—
—
—
—
—
—
—
4000
—
4.6
—
—
—
—
—
—
—
—
7.5
2.2
1.7
–0.6
–0.95
100
2.3
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
ton
toff
—
—170
4000 —
—
Symbol UnitParameter Test conditions Limits
min typ max
VCC
VO
VIH
VIL
Symbol Parameter min typ max Unit
Limits
Supply voltage
Output voltage
“H” input voltage
“L” input voltage
Collector current
(Current per 1 cir-
cuit when 4 circuits
are coming on si-
multaneously)
VCC = 5V, Duty Cycle
P : no more than 18%
FP : no more than 9%
VCC = 5V, Duty Cycle
P : no more than 4%
FP : no more than 2%
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
(BR) CEO
ICC
IR
VF
hFE
ICEO = 100µA
VCC = 6V, VI = 0.5V
VCC = 4V, VI = 0.5V, IC = 1.25A
VCC = 4V, VI = 0.5V, IC = 0.7A
VI = VCC–3.5V
VI = 0V
VR = 80V
IF = 1.25A, VCC open
VCC = 4V, VCE = 4V, IC = 1A, Ta = 25°C
Collector-emitter breakdown voltage
Supply current (one circuit coming on)
Clamping diode reverse current
Clamping diode forward voltage
DC amplification factor
Collector-emitter saturation voltage
Input current
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Turn-on time
Turn-off time CL = 15pF (note 1)
PG
50ΩC
L
OPEN
V
CC
V
O
R
L
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
I
= 3.5V
P-P
(0.5 to 4V)
(2) Input-output conditions : R
L
= 8.3Ω, V
O
= 10V, V
CC
= 4V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Measured device
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
Aug. 1999
TYPICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54661P/FP
4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54661FP
M54661P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
V
CC
= 4V
V
I
= 0.5V
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
0
0.5
1.0
Ta = –20°C
Ta = 25°C
Ta = 75°C
1.5
2.0
0.5 1.0 1.5 2.0
Collector current Ic (A)
Duty-Cycle-Collector Characteristics
(M54661P)
Duty cycle (%)
0
0
0.5
1.0
1.5
2.0
➀
➁
➂
➃
20 40 60 80 100
Collector current Ic (A)
Duty cycle (%)
0
0
0.5
1.0
1.5
2.0
➀
➁
➂
➃
20 40 60 80 100
Collector current Ic (A)
Duty cycle (%)
0
0
0.5
1.0
1.5
2.0
➀
➁
➂
➃
20 40 60 80 100
Collector current Ic (A)
Duty cycle (%)
0
0
0.5
1.0
1.5
2.0
➀
➁➂
➃
20 40 60 80 100
Collector current Ic (A)
Duty-Cycle-Collector Characteristics
(M54661P)
Duty-Cycle-Collector Characteristics
(M54661FP) Duty-Cycle-Collector Characteristics
(M54661FP)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 5V
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 5V
•Ta = 75°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 5V
•Ta = 75°C
•V
CC
= 5V
•Ta = 25°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54661P/FP
4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
10
1
V
CC
= 4V
V
CE
= 4V
Ta = 25°C
Ta = 75°C
Ta = –20°C
5
3
2
7
10
5
5
3
2
7
10
4
5
3
2
7
10
3
10
2
10
2
23 57
10
3
23 57
10
4
23 57
DC amplification factor h
FE
Grounded Emitter Transfer Characteristics
Supply voltage-Input voltage V
CC
–V
I
(V)
0
V
CC
= 4V
V
CE
= 4V
Ta = 75°C
Ta = –20°C
Ta = 25°C
0.4
0.8
1.2
1.6
00.5 1.0 1.5 2.0
Collector current Ic (A)
Input Characteristics
Supply voltage-Input voltage V
CC
–V
I
(V)
0
Ta = 25°C
V
CC
= 5V
Ta = 75°C
Ta = –20°C
–0.4
–0.2
–0.6
–0.8
–1.0
012345
Input current I
I
(mA)
Supply Current Characteristics
Supply voltage V
CC
(V)
0
Ta = 25°C
V
I
= 0.5V
Ta = 75°C
Ta = –20°C
4.0
2.0
6.0
8.0
10.0
0246810
Supply current Icc (mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
0
0
0.5
1.0
Ta = –20°C
Ta = 25°C
Ta = 75°C
1.5
2.0
0.5 1.0 1.5 2.0
Forward bias current I
F
(A)
