PMD16K60 PMD16K80 PMD16K100
MAXIMUM RATINGS: (TC=25°C) SYMBOL PMD17K60 PMD17K80 PMD17K100 UNITS
Collector-Base Voltage VCBO 60 80 100 V
Collector-Emitter Voltage VCEO 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 20 A
Peak Collector Current ICM 40 A
Continuous Base Current IB 500 mA
Power Dissipation PD 200 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 0.875 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICER V
CE=Rated VCEO, RBE=1.0kΩ 1.0 mA
ICER V
CE=Rated VCEO, RBE=1.0kΩ, TC=150°C 5.0 mA
IEBO V
EB=5.0V 2.0 mA
BVCEO IC=100mA (PMD16K60, 17K60) 60 V
BVCEO I
C=100mA (PMD16K80, 17K80) 80 V
BVCEO I
C=100mA (PMD16K100, 17K100) 100 V
VCE(SAT) I
C=10A, IB=40mA 2.0 V
VBE(SAT) I
C=10A, IB=40mA 2.8 V
VBE(ON) V
CE=3.0V, IC=10A 2.8 V
hFE V
CE=3.0V, IC=10A (PMD16K series) 1.0K 20K
hFE V
CE=3.0V, IC=10A (PMD17K series) 800 20K
hfe V
CE=3.0V, IC=7.0A, f=1.0kHz 300
fT V
CE=3.0V, IC=7.0A, f=1.0MHz 4.0 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 400 pF
PMD16K SERIES NPN
PMD17K SERIES PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PMD16K, PMD17K
series types are complementary silicon Darlington power
transistors, manufactured by the epitaxial base process,
mounted in a hermetically sealed metal package, and
designed for power switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
R1 (26-November 2012)
www.centralsemi.com
PMD16K SERIES NPN
PMD17K SERIES PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2
www.centralsemi.com
R1 (26-November 2012)
