PMD16K SERIES PMD17K SERIES NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, mounted in a hermetically sealed metal package, and designed for power switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance PMD16K60 SYMBOL PMD17K60 VCBO 60 VCEO 60 PMD16K80 PMD17K80 80 80 PMD16K100 PMD17K100 UNITS 100 V 100 5.0 V 20 A ICM IB 40 A 500 mA 200 W PD TJ, Tstg -65 to +200 C JC 0.875 C/W ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICER VCE=Rated VCEO, RBE=1.0k ICER VCE=Rated VCEO, RBE=1.0k, TC=150C MAX 1.0 UNITS mA 5.0 mA 2.0 mA IEBO VEB=5.0V BVCEO IC=100mA (PMD16K60, 17K60) IC=100mA (PMD16K80, 17K80) 60 V BVCEO 80 V BVCEO IC=100mA (PMD16K100, 17K100) 100 VCE(SAT) IC=10A, IB=40mA IC=10A, IB=40mA VBE(SAT) VBE(ON) hFE hFE hfe VCE=3.0V, IC=10A VCE=3.0V, IC=10A (PMD16K series) VCE=3.0V, IC=10A (PMD17K series) fT VCE=3.0V, IC=7.0A, f=1.0kHz VCE=3.0V, IC=7.0A, f=1.0MHz Cob VCB=10V, IE=0, f=1.0MHz V VEBO IC V 2.0 V 2.8 V 2.8 V 1.0K 20K 800 20K 300 4.0 MHz 400 pF R1 (26-November 2012) PMD16K SERIES PMD17K SERIES NPN PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (26-November 2012) w w w. c e n t r a l s e m i . c o m