BC 350 BC 351 BC 352 applications. VCE(sat) @ High Breakdown Voitage BVoEQ = 20, 30, 45 Vde (Min) @ | @ Low Output Capacitance Cop = 4.0 pF (Max) @ Vop = 10 Vde Complementary to NPN BC 347, BC 348, BC 349 c c @ Low Collector-Emitter Saturation Voitage = 0.25 Vde (Max) @ ! PNP SILICON ANNULAR TRANSISTORS = 1.0 mAdc = 10 mAdc @ One-Piece, Injection-Molded Unibloct Package . . . designed for general purpose use in audio, radio, and tetevision PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ambient Rating Symboi Type Vaiue Unit BC 350 45 Collector- Emitter Voltage Voeo BC 351 30 Vde BC 352 20 Emitter-Base Voltage Ver 5.0 Vde Collector Current - Continuous le 100 mAdc Total Device Dissipation T An 25C Pp 300 mw Derate above 25C 2.73 mwW/?Cc Operating and Storage Junction T lst 55 to +135 c Temperature Range 6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to 6 SA 0.367 C/mW { -e al ola Leads to fit into 3 T 048 DIA HOLE (TYP) ) F 3 : ~T CASE BHT) 13.92) All dimensions in MiltimetersBC 350 BC 351 BC 352 ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol Type Min. Max, Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BV. CEO BC350 45 Vde Wg = 1.0 mAdc, I = 0) BC351 30 BC352. 20 Collector-Base Breakdown Voltage BVcRo BC350 30 Ig = 100 pAdc, I. = 0) BC351 40 Vde BC352 30 Emitter-Base Breakdown Voltage BVEB oO 5 Vde dy = 100 pAdc, Ia = 0) Collector Cutoff Current I nAdc (V_. = 20V, 1, = 0) CBO 100 CB E ON CHARACTERISTICS DC Current Gain hep cee Ug = 2.0 mAdc, Vog = 5 Vde 40 450 Collector-Emitter Saturation Voltage Vers 0 0.25 Vde (1, = 10 mAdc, I, = 1.0 mAdc) a Cc B DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fp 125 - MHz (y= 5.0 mAde, Vap = 10 Vdc, f= 100 MHz) Output Capacitance Cop - 4.0 pF (Von = 10 Vdc, 1, = 0, f = 100 kHz) FIGURE 1 SIMPLIFIED AC EQUIVALENT CIRCUIT (Common Emitter) BASE b Ccb COLLECTOR L | (hfe + 1) re Imp e ; V/gc 7 Co Note: FIGURE 2 SMALL SIGNAL CURRENT GAIN Data is presented in terms of the equivalent circuit shown in 700 Figure 1. Values for its components may be found or calculated as follows: f= 4.0 kHz , . : Ta, = 25C fy See Figure 8 Cob = Cop 0.2 pF (See Figure 6) te = 26 mV/l_E 9m = 1/re 1 Gc = (hfe + 1) hop (See Figures 2 & 7} Ce ay ft fe Co = 0.2 pF Low frequency h parameters may be found from: hie = th + (hte +t) re hg = See Figure 2 hre = Negligible Noe = (hfe + 1) hop 5 07 10 20 ~3.0 50 7.0 10 Ic, COLLECTOR CURRENT (mAdc} hfe. SMALL SIGNAL CURRENT GAINBC 350 BC 351 BC 352 FIGURE 3 NORMALIZED DC CURRENT GAIN FIGURE 4 SATURATION AND ON VOLTAGES 20 1.0 Vce=10V 0.9 Ta = 25C 2 15 Ta = 259C VBE (sat) Ic/ig = 10 = 0.8 o & _ a 10 @ 07 VBE(on) @VcE = 10 V oa _ 3 Ss 0.6 g o7 3 05 a = N05 a o4 a > = S03 $ 0.2 = 03 , VCE (sat) @ te/lp = 10 2 Ot 3 0.2 0 0.2 05 = 4102.0 5.0 10 20 50 6100 200 U1 0.2 03 050710 2030 507.010 20 30 50 70 100 ig, COLLECTOR CURRENT (mAdc} ig, COLLECTOR CURRENT (mAdc} FIGURE 5 CURRENT-GAINBANDWIDTH PRODUCT FIGURE 6 ~ CAPACITANCES = 400 = Cit 300 o a a _ Q we = = Ta = 259C = nf ec ao a 2 z = Qo z = a x I oo z oC a 3 2 2 ua oc oc a oo 1 05 1.0 20 3.0 50 10 2030 50 04 06 0810 40 6.0 ip, COLLECTOR CURRENT (mAde) Vp, REVERSE VOLTAGE (VOLTS) FIGURE 7 OUTPUT ADMITTANCE FIGURE 8 ~ BASE SPREADING RESISTANCE VcE=10V f= 1.0kHz Ta = 25C nN a = 5 3 o hob, QUTPUT ADMITTANCE (OHMS) BASE SPREADING RESISTANCE (OHMS) Th: oS ic, COLLECTOR CURRENT (mAdc) Ic, COLLECTOR CURRENT (mAdc)BC 350 BC 351 BC 352 BC 350, BC 351, BC 352 can be supplied in 4 different hee ranges as follows Characteristic Symbol Type Min Max DC Current Gain hep BC350 (Ic = 2mA, Vor =S5V) BC351 40 450 BC352 BC350L BC351L 40 120 BC352L BC350A BC351A 110 220 BC352A BC350B BC351B 200 450 BC352B