~ Numerical Index 2N1869 -2N1983 al> MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS sje = = z z= GS | ce) REPLACE | PAGE Po |S] Ty | Vee | Vee | = Ire @ Ie Versan @ Ie 2) | We 1/5 | ment | numer | USE & 5 2 el h |B) 2ls =\a @ 25C | B} C | (volts) | (volts) |S | (min) (max) 5] (volts) = 3 s\s 2N1869 thru Thyristors, see Table on Page 1-154 2N1885 2N1886 S]N HPA 20W |] C 4175 60 60 0 20 80 0.54 1.0A 2,0M | T 2N1889 S| N | 2N3498 8-232 | RFA 800M | A | 200 100 80 R ]| 40 | 120 150M 150M 30 E 50M |T 2N1890 S| WN | 2N3499 8-232] RFA 800M | A | 200 100 80 R }100 | 300 150M 150M 50 E 60M | T 2N1891 GIN BMS 150M | A 85 25 15 0 25 100M 100M 5.0M |B 2N1892 G| P MSS 150M | A 85 30 15 0 40 | 200 10M 10M 30 E 5.0M |B 2N1893 S| N ] 2N3498 8-232] RFA 800M | A | 200 120 | 100 R 40 | 120 150M 150M 30 E 50M | T 2N1893A |S] N | 2N3498 8-232 | HPA 0.8W ] A | 200 140 80 0 40} 120] 0.154 0.154 30 E 100M | T 2N1894 S]N LPA 200 60 60 R 12 60 1.0A 1.04 2N1895 S|N LPA 200 80 80 R 12 60 1.0A 1.0A 2N1896 S|N LPA 200 60 60 |R | 45 | 135 1.0A 1.0A 25M | T 2N1897 S|N LPA 200 80 80 JR | 45} 135 L.OA 1.0A 25M | T 2N1898 S|N LPA 200 100 | 100 R 45 4135 1, 0A 0A 25M |T 2N1899 S/N PHS 125w }c | 150 140 50 0 10 30 10A 1QA 30M | T 2N1900 SN HPA 125wW | c | 150 140 30 Qo 18. LOA 1QA 50M | T 2N1L901L S|N PHS 125W | C | 150 140 5 0 20 60 LOA 10A 50M | T 2N1902 S|N PHS 125W | Cc | 150 140 50 0 10 30 LOA 1.0 10A 50M | T 2N1903 S|N HPA 125W 1C | 150 140 50 Oo }8.0 LOA 2.0 10A 50M | T 2N1904 S|N PHS 125W }C | 150 140 50 oO 20 60 LOA 1.0 LOA 50M} T 2N1905 G] P } 2N2832 7-91 LPA 30W } Cc | 100 100 50 0 50 | 150 1.0A 1.0 5.0A 30 ]E 2N1906 G | P } 2N2832 7-91 LPA 30W | c | 100 130 60 0 75 1 250 1.0A 5.0 5.0A SO YE 2N1907 G{P | 2N2832 7-91 HPA 60W | Cc } 100 100 40 0 1.0 I5A 10M | T 2N1907A |G|P HPA 60w | 100 40 30 1170 10A 0.7 10A 2.0/8 2NL908 G|P | 2N2833 7-921 HPA 60w 1c {100 130 50 0 1.0 154 10M |)T 2NLOO8A | G | P HPA 60W | C 130 50 0 30 1170 104A 0.7 10A 42.0 E 2N1909 thru Thyristors, see Table on Page 1-154 2N1916 2N1917 $|P CHP |0.25W | A [175 25 18.0 0 25 E 16M |T 2N1918 S{P CHP ,0,.25W |A |175 25 18.0 0 25 E 10M {T 2N1919 S|P CHP [0.25W [A |175 40 18 Q 0.003 1.0M |B 2N1920 SP CHP | 0.25W | A |175 40 18 Go 0.004 1.OM |B 2N1921. s|P CHP | 0.25W |A | 175 50 50 0 0,005 1.0M |B 2N1922 S| P CHP |0.25W |A |175 80 80 0 0.005 1.0M |B 2N1923 SYN AFA 750M ]A | 150 85 85 0 14.0 390 7.0 20M 28 E 2N1924 G]P 6-37 AFA 225M |A {100 60 | 40 R 34 65 20M 0.11 20M 30 E 1,0M |B 2N1925 G]P 6-37 AFA 225M [A $100 60 40 R 53 90 20M 0.1L 20M | 44 E 1.3M [B aNtoss GIP 6-37 AFA 225M |A | 100 60 40 R 72 1121 20M 0.11 20M 60 E 1.5M |B thru Thyristors, see Table on Page 1-154 2N1935 2N1936 SIN LPA 150W |C |175 125 60 oO 17.0 50 10A 0.75 10A 15 E 4.0M |T 2N1937 S|N LPA 150W |c |175 125 80 0 17.0 50 LOA 0.75 10A 15 E 4.0M |T 2N1940 G]P HPA 3.5W [Cc | 100 30 15 0 [5.0 40M 1.8 200M 2N1941 SIN AFA O.6W [A [175 45 30 R {| 30 [150 10M 1.5 5.0M | 40 E 60M |T 2N1942 GIP MSS O.2w fA 85 20 10 0 20 60 Q.2A 5.0M |B 2N1943 S|N AFA 800M |A | 200 60 60 0 30 90 200M 5.0 200M 12 E 2N1944 S|N MSS O.6W [A 175 20 20 R {150 |450 1.0M 100 E 60M | T 2N1945 SiN MSS 0.6W [A 1175 30 30 R ]150 | 450 1L.OM 100 E 60M {T 2N1946 S|N MSS O.6W [A 1175 40 40 R [150 |450 1.0M 100 E 60M |T 2N1947 S|N MSS 0.6W A |175 20 20 R 4500 | 800 O.1A 100 E 60M |T 2N1948 S|N MSS 0.6W [A |175 30 30 R [500 | 800 O.LA 100 E 60M |T 2N1949 S|N MSS 0.6W |A [175 40 } 40 R {500 | 800 O.1A 100 E 60M |T 2N1950 SIN MSS 0.6W JA [175 20 20 R {250 | 500 O.1A 75 E 60M /T 2N1951 S|N MSS O.6W FA 1175 30 30 R |250 | 500 O.1A 75 EB 60M {T 2N1952 S|N MSS O.6W }A 4175 49 ) 40 R {250 | 500 O.1A 75 \E 60M |T 2N1953 S|N AFA 0.6W [A 1175 20 20 Ss 15 {150 10M 28 E 40M |T 2N1954 GP | 2N651 6-20 MSS 200M |A | 100 60 20 0 30 [120 20M 0.3 20M 2N1955 G | P {| 2N1190 6-28 | MSS 200M |A {100 60 18 0 50 | 200 20M }0.175 20M 2N1956 G|P | 2N651 6-20 | MSS 200M |A |100 60 16 0 30 1120 20M [0.175 20M 2N1957 G | P | 2N1187 6-28 MSS 200M |A |100 60 14 0 30 120 20M |0.175 20M 2N1958 S |{N | 2N2537 8-151 | HSS 600M {A ]175 60 40 R 20 60 150M 0.45 150M 100M |T 2N1958A |S | N | 2N2537 8-151 | HSS 600M |A 1175 60 40 R 20 60 150M 0.45 150M LOOM |T 2N1959 S|N 8-100 | HSS 600M |A {175 60 40 R 4Q |120 150M 0.45 150M |1.0 E 2N1959A |S | N | 2N2537 8-15] | HSS 600M |A |175 60 40 R 40 1120 150M 0.45 150M 100M 2N1960 GIP HSS 150M }A |100 15 15 25 10M 0.16 10M 2N1961 G|P HSS 150M ]A [100 12 12 Ss 20 10M 0.20 10M 2N1962 S | N | 2N834 8-54 HSS 400M |A [175 40 20 R 20 60 10M 0.25 10M 200M |T 2N1963 S |N | 2N834 8-54 HSS 400M |A [175 30 15 R 25 10M 0.16 10M 200M |T 2N1964 S 1] N | 2N2539 8-15 RSS 400M |A |175 60 40 R 20 60 150M 0.45 150M 100M |T 2N1965 S LN | 2N2539 8-15 HSS O.4W ;A 1175 60 40 R 49 [120 [0.15A 0.45 [0.154 100M |[T 2N1966 GP SPP |0.12W }A 75 35 15 R 2N1967 GP SPP |0.12W JA 75 35 15 R 2N1968 G|P SFP |0.1L2W [A 75 35 18 R 2N1969 G|P MSS 150M |A 85 30 15 0 50 }200 200* 10M |B 2N1970 GIP 7-74 LPA 150W |C {100 100 50 B 17 40 5.0A 1.0 124 5.0K |E 2N1971 G | P |2N2140 7-78 LPA 100 80 | 40 0 25 60 O.5A 0.9 3,0A 15K |E 2N1972 S |N [2N2219 8-108 | RFA 600M {A |175 60 30 R {110 | 350 50M 2.0 50M 40 E 50M |T 2N1973 S |N | 2N2219 8-108 | AFA 800M |A |200 100 80 R 75 10M 1.2 50M 76 E 60M {T 2N1974 S |N | 2N3498 8-232 | AFA 800M |A |200 100 80 R 35 10M 1.2 50M 36 EB 50M 1T 2N1975 S |N | 2N3498 8-232 | AFA 800M |A }200 L100 80 R 15 LOM 1.2 50M 18 E 40M |T 2N1978 SIN HPA 30W |}C |200 60 40 R 20 500M 1.5 1.04 40M |T 2N1980 GIP 7-74 LPA 170W |c 1100 50 30 Q 50 [100 5.0A 0.5 5.0A 3.0K |E 2N1981 GIP 7-74 LPA 170W |Cc |100 70 40 0 50 | 100 5.04 0.5 5.04 3.0K {E 2N1982 G iP 7-74 LPA 170W jc |100 90 50 0 50 |100 5.04 0.5 5.04 3.0K JE 2N1983 S |N | 2N2218 7-808 | AFA 600M FA |150 50 25 0 70 E 40M |T 1-123GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS (SILICON) Switching and General Purpose Transistors Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N696 2N1991 2N2330 2N1983 2N697 | 2N2331 2N1984 2N718 2N1420 29 2N2195 30 2N2218 | 2N3133 2N2218 | 2N2800 2N2219 | 2N3134 2N2219 | 2N2801 2N2221 | 2N3135 2N2221 | 2N2837 2N2222 | 2N3136 2N2222 | 2N2838 2N3299 | 2N3133 2N3300 | 2N3134 2N3301 | 2N3135 39 2N3302 | 2N3136 49 2N758 2N3250 2N2218A| 2N3250 2N2194 | 2N2904 2N2192 | 2N3244 2N3506 2N795 2N3251 2N2219A! 2N3251 2N2218A} 2N2905 2N2193 | 2N3245 2N3507 2N760 MM4048 2N22214! 2N2219A) 2N2906 2N915 2N2222A 2N2221A] 2N2907 2N929 2N2224 2N2222A!| 2N3485 2N930 2N3946 2N3486 2N3946 2N3947 2N4890 59 2N3947 60 2N758A | 2N3798 2N910 2N3250A 2N656 2N2904A 2ZN759A | 2N3799 2N911 2N3251A 2N699 2N2905A 2N760A | 2N3250A 2N1990 2N2906A 2N929A | 2N3251A 2N2907A 2N9304 2N3485A MM2483 2N3486A 79 MM2484 80 2N739 2N3494 2N720A | 2N3494 2N720A 2N3019 Y 2N740 2N3496 2N1893 | 2N3496 2N3019 2N3020 99 2N2405 2N3020 100 2N4924 | 2N3495 2N3498 | 2N3495 2N3498 | 2N3634 \ 2N3497 2N3499 | 2N3497 2N3499 | 2N3635 2N4928 2N4924 | 2N9634 2N4924 2N3635 149 2N4928 150 2N3114 | 2N4929 2N3500 | 2N3635 2N3500 | 2N3636 2N4925 | 2N4930 2N3501 | 2N3637 2N3501 | 2N3637 2N4926 2N4925 | 2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NW Switching and General Purpose Transistors 2nN1983 (siticon) 2n1984 Veco =25V Pp = 600 mW Ik = 1.0A NPW silicon annular small-signal transistor. CASE 31 Collector connected to case (TO-5) MAXIMUM RATINGS Rating Symbol | Value Unit Collector-Emitter Voltage Voro 25 Vdc Collector-Base Voltage Vop 50 Vde Emitter-Base Voltage VER 5.0 Vde Collector Current Tn 1.0 Adc Total Device Dissipation @ Ty = 25C Ph 0.6 Watt Derate above 25C 4.8 mw/C Total Device Dissipation @T. = 25C Ph 2.0 Watts Derate above 25C 16 mw/C Operating and Storage Junction T., T -65 to +150 C J stg Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case P56 62.5 C/W Thermal Resistance, Junction to Ambient Oy4 208 C/W 8-102 Switching and General Purpose Transistors 2N1983, 2N1984 (continued) ELECTRICAL CHARACTERISTICS (Ty, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* BV * vde (IL, = 100 mAdc, I, = 0) CEO(sus) 25 - Cc B Collector-Emitter Sustaining Voltage* BV * Vde (L, = 100 mAde, R 2 10 ohms) CER(sus) 30 - Cc BE Collector Cutoff Current lapo pAdc Voz = 30 Vde. lp = 0) - 5.0 0 Wep = 30 Vde, Ip = 0, T, = 150 C) - 200 Emitter-Cutoff Current leBo uAde (Vn Bott) = 2.0 Vdc, Io = 0) - 100 ON CHARACTERISTICS Collector-Emitter Saturation Voltage Vor(sat) Vde MI, = 5.0 mAdc, I, = 0.5 mAdc) - - 0.25 Base-Emitter On Voltage Vv Vde = . i BE(on) . fo = 1.0 mAdc, Vor = 5.0 Vdc) 0.85 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fp MHz le = 50 mAdc, Vor = 10 Vdc, f = 20 MHz} 40 - Output Capacitance Cop pF (Voy = 10 Vae, I, = 0) - 45 Input Impedance ie k ohm (lg = 5.0 mAdc, Vor = 5.0 Vdc) 2N1983 - 2.0 2N1i984 - 1.2 Input Resistance ib ohm Ge = 1.0 mAdc, Vorp= 5.0 Vdc, f = 1,0 kHz) 20 30 1, = 5.0 mAdc, Vor = 5.0 Vdc, f= 1.0 kHz) 4.0 8.0 Voltage Feedback Ratio bap x 1074 Gg = 1,0 mAdc, Vor = 5.0 Vdc, f = 1.0 kHz) 2N1983 - 7.0 2N1984 - 5.0 Mg = 5.0 mAdc, Vor = 5.0 Vdc, f = 1.0 kHz) 2N1983 - 7.0 2N1984 - 5.0 Small~-Signal Current Gain fe - fi = 1.0 mAdc, Vor = 5.0 Vdc, f = 1.0 kHz) 2N1983 70 210 2N1984 35 100 (Ig = 5.0 mAde, Vor = 5.0 Vdc, f = 1.0 kHz) 2N1983 80 240 2N1984 40 120 Output Admittance h | - (Ig = 5.0 mAdc, Va_ = 5.0 Vde) 2N1983 oe - 200 2N1984 - 100 Output Admittance h b umho (ig = 1.0 mAdc, Vag = 5.0 Vdc, = 1.0 kHz) - 1.0 (Ig = 5.0 mAde, VQ, = 5.0 Vdc, f = 1.0 kHz) - 1.5 * Pulse Test: Pulse Width 5 300 ys, Duty Cycle S$ 2.0%. 8-103