DATA SH EET
Product specification
Supersedes data of 1996 Oct 02 2003 Sep 26
DISCRETE SEMICONDUCTORS
BLF346
VHF power MOS transistor
M3D058
2003 Sep 26 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
FEATURES
•High power gain
•Easy power control
•Good thermal stability
•Gold metallization ensures excellent reliability.
APPLICATIONS
•Linear amplifier applications in television transmitters
and transposers.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119A flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the General Section of the
associated Data Handbook for further information.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PINNING - SOT119A
PIN DESCRIPTION
1 source
2 source
3 gate
4 drain
5 source
6 source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM268
2
4
65
3
1
QUICK REFERENCE DATA
RF performance in a linear amplifier.
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak synchronization level.
MODE OF
OPERATION f
(MHz) VDS
(V) ID
(A) Th
(°C) PL
(W) Gp
(dB) dim
(dB) (1)
Class-A 224.25 28 3 70 >24 >14 −52
25 typ. 30 typ. 16.5 −52
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Sep 26 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −13 A
Ptot total power dissipation Tmb ≤25 °C−130 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from junction to
mounting base Tmb =25°C; Ptot = 130 W 1.35 K/W
Rth mb-h thermal resistance from mounting
base to heatsink Tmb =25°C; Ptot = 130 W 0.2 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDSon.
(2) Tmb =25°C.
handbook, halfpage
10−1102
1
10
110
(1)
50
ID
(A)
VDS (V)
MRA931
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0 50 100 150
200
150
50
0
100
MGG104
Ptot
(W)
Th (°C)
(1)
(2)
2003 Sep 26 4
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID=50mA 65 −−V
I
DSS drain-source leakage current VGS = 0; VDS =28V −−2.5 mA
IGSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage VDS = 10 V; ID=50mA 2 −4.5 V
∆VGS gate-source voltage difference
of matched pairs VDS = 10 V; ID=50mA −−100 mV
gfs forward transconductance VDS = 10 V; ID=5A 3 4.2 −S
R
DSon drain-source on-state resistance VGS = 10 V; ID=5A −0.2 0.3 Ω
IDSX on-state drain current VGS = 10 V; VDS =10V −22 −A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −225 −pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −180 −pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −25 −pF
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
2003 Sep 26 5
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
Fig.4 Temperature coefficient of gate-source
voltageasafunctionofdraincurrent;typical
values.
VDS =10V.
handbook, halfpage
2
−6
−2
0
−4
MGG105
10−210−1110
T.C.
(mV/K)
ID (A)
Fig.5 Drain current as a function of gate-source
voltage; typical values.
VDS = 10 V; Tj=25°C.
handbook, halfpage
0 5 10 20
40
30
10
0
20
15
MGG106
VGS (V)
ID
(A)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
ID= 5 A; VGS =10V.
handbook, halfpage
0
340
280
220
160 30 150
MGG107
60 90 120
RDS on
(mΩ)
Tj (°C)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
0
200
400
600
800
010203040
C
(pF)
Cis
Cos
(V)VDS
MRA930
2003 Sep 26 6
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
300
100
0
200
MGG108
30 VDS (V)
Crs
(pF)
APPLICATION INFORMATION
RF performance in a linear amplifier (common source class-A circuit).
Rth mb-h = 0.2 K/W; ZL= 1.1 + j0.2 Ωunless otherwise specified.
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak synchronization level.
Ruggedness in class-A operation
The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: VDS = 28 V; f = 225 MHz at rated output power.
MODE OF
OPERATION f
(MHz) VDS
(V) ID
(A) Th
(°C) Po sync
(W) Gp
(dB) dim
(dB) (1)
Class-A 224.25 28 3
70 >24 >14 −52
25 typ. 30 typ. 16.5 −52
70 typ. 20 typ. 14.5 −55
25 typ. 22 typ. 15 −55
2003 Sep 26 7
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
Fig.9 Intermodulation distortion as a function of
peak synchronized output power.
handbook, halfpage
0 10203040
−50
−70
−55
MGG109
−65
−60
dim
(dB)
Po sync (W)
(1) (2)
(1) Th=70°C.
(2) Th=25°C.
Fig.10 Test circuit for class-A operation at f = 225 MHz.
handbook, full pagewidth
MGG113
C5
C7
R2
R1
R3
R4
C8
R5
C9
C6
DUT
L6 C13
C12
C11 C15
C14
C10
L4 L7
L2 L3
C4C2
C3
BLF346
50 Ω
output
C16
L8
50 Ω
input
C1
L1 L5
VDS
VB
2003 Sep 26 8
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
List of components (see Figs 10 and 11).
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board with epoxy fibre-glass dielectric (εr= 4.5); thickness
1⁄16 inch.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 film dielectric trimmer 2 to 18 pF 2222 809 09003
C2 multilayer ceramic chip capacitor;
note 1 10 pF, 500 V
C3, C15, C16 film dielectric trimmer 4 to 40 pF 2222 809 08002
C4, C5 multilayer ceramic chip capacitor;
note 1 56 pF, 500 V
C6, C12 multilayer ceramic chip capacitor;
note 1 680 pF, 500 V
C7, C8, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C10, C11 multilayer ceramic chip capacitor;
note 1 43 pF, 500 V
C13 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C14 multilayer ceramic chip capacitor;
note 1 27 pF, 500 V
L1 4 turns enamelled 0.7 mm copper
wire 42.4 nH length 4 mm;
int. dia. 3 mm;
leads 2 ×5mm
L2 stripline; note 2 50 Ωlength 49 mm;
width 2.8 mm
L3, L4 stripline; note 2 31 Ωlength 11.5 mm;
width 6 mm
L5 2 turns enamelled 1.5 mm copper
wire 18.7 nH length 8 mm;
int. dia. 4 mm;
leads 2 ×5mm
L6 grade 3B Ferroxcube RF choke 4312 020 36642
L7 stripline; note 2 31 Ωlength 40 mm;
width 6 mm
L8 3 turns enamelled 1.5 mm copper
wire 28.8 nH length 8 mm;
int. dia. 4 mm;
leads 2 ×5mm
R1 metal film resistor 1 kΩ, 0.4 W 2322 151 71002
R2 metal film resistor 100 kΩ, 0.4 W 2322 151 71004
R3 10 turns cermet potentiometer 100 Ω
R4 metal film resistor 316 kΩ, 0.4 W 2322 153 53161
R5 metal film resistor 10 Ω, 0.4 W 2322 153 51009
2003 Sep 26 9
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
Fig.11 Component layout for 225 MHz class-A test circuit.
Dimensions in mm.
The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized, to serve as a ground plane. Earth
connections are made by means of copper straps and hollow rivets.
handbook, full pagewidth
strap
strap
strap
strap
rivet
rivet
rivet
rivet
rivet
rivet
rivet
rivet
mounting
screws
(8×)
C1
C3
L3 L4
L1 L8
L2 L7
L5
C2
C16
C15
C14
C5 C11
C10
C4
C6
C7
R1
R2 C8 C9
C12
C13
R5
R3 +VDS
L6
150
70
MGG114
2003 Sep 26 10
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
Fig.12 Input impedance as a function of frequency
(series components); typical values.
Class-A operation; VDS = 28 V; ID= 3 A; PL= 30 W; Th=70°C.
handbook, halfpage
160 180 200 220 240
4
2
−6
−4
−2
MGG110
0
Zi
(Ω)ri
xi
f (MHz)
Fig.13 Load impedance as a function of frequency
(series components); typical values.
Class-A operation; VDS = 28 V; ID= 3 A; PL= 30 W; Th=70°C.
handbook, halfpage
160 180 200 220 240
2
0
MGG111
1
ZL
(Ω)
f (MHz)
RL
XL
Fig.14 Definition of MOS impedance.
handbook, halfpage
MBA379
ZiZL
Fig.15 Power gain as a function of frequency;
typical values.
Class-A operation; VDS = 28 V; ID= 3 A; PL= 30 W; Th=70°C.
handbook, halfpage
160 180 200 220 240
20
16
MGG112
12
8
4
0
f (MHz)
Gp
(dB)
2003 Sep 26 11
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
BLF346 scattering parameters
VDS = 28 V; ID= 3000 mA; note 1.
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
100 0.91 −178.9 2.12 67.7 0.01 −0.6 0.88 −177.3
105 0.91 −179.0 2.01 66.6 0.01 −0.4 0.88 −177.4
110 0.92 −179.1 1.91 65.5 0.01 −0.1 0.88 −177.4
115 0.92 −179.2 1.81 64.5 0.01 0.2 0.88 −177.4
120 0.92 −179.3 1.72 63.5 0.01 0.5 0.89 −177.4
130 0.92 −179.5 1.56 61.5 0.01 1.3 0.89 −177.5
140 0.92 −179.7 1.43 59.6 0.01 2.5 0.89 −177.5
150 0.93 −179.9 1.31 58.0 0.01 4.1 0.90 −177.6
160 0.93 180.0 1.21 56.3 0.01 6.0 0.90 −177.7
170 0.93 179.8 1.12 54.7 0.01 8.2 0.90 −177.8
180 0.93 179.5 1.04 53.0 0.01 10.5 0.91 −177.9
190 0.93 179.3 0.97 51.2 0.01 13.0 0.91 −178.0
200 0.94 179.1 0.91 49.6 0.01 15.7 0.91 −178.1
225 0.94 178.5 0.77 46.1 0.01 23.9 0.92 −178.5
250 0.95 178.0 0.66 43.3 0.01 33.6 0.93 −178.9
275 0.95 177.4 0.58 40.1 0.01 43.6 0.94 −179.3
300 0.95 176.7 0.50 37.5 0.01 51.8 0.94 −179.7
350 0.96 175.5 0.40 33.5 0.01 65.7 0.95 179.4
400 0.97 174.8 0.32 30.6 0.01 74.5 0.96 178.4
450 0.97 173.6 0.27 27.7 0.01 80.0 0.97 177.4
500 0.98 172.5 0.22 25.8 0.02 83.0 0.97 176.4
600 0.99 170.3 0.16 24.0 0.02 86.7 0.98 174.6
700 1.00 168.2 0.13 24.7 0.03 88.5 0.99 172.8
800 1.05 165.0 0.10 27.6 0.03 90.1 0.99 170.9
900 1.03 158.5 0.09 31.5 0.04 91.0 1.00 168.9
1000 1.00 156.6 0.08 38.7 0.04 92.1 1.00 167.1
2003 Sep 26 12
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT119A 99-03-29
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 6 leads SOT119A
U2
H
A
F
A
bM
w3
b1
b2
p
w1AB
M M M
D
1DU
3
Q
c
q
U
1
C
B
1
2
3
4
5
6
e
M M
C
w
2
H
1
UNIT A
mm
Db
5.59
5.33 0.15
0.10 12.86
12.59 6.48 21.97
21.21 6.48
6.22 12.32
12.07
7.39
6.32
ceU
2
0.2518.42
qw
1
0.250.51
w3
w2
U3
H1
18.55
18.28
U1
24.89
24.64
4.07
3.81
b2
b1
5.34
5.08
p
3.30
3.05
Q
4.57
4.06
FH
12.83
12.57
D1
2.54
2.29
inches 0.220
0.210 0.006
0.004 0.505
0.496 0.255 0.865
0.835 0.255
0.245 0.485
0.475
0.291
0.249 0.0100.725 0.0100.020
0.730
0.720 0.980
0.970
0.160
0.150
0.210
0.200 0.130
0.120 0.180
0.160
0.505
0.495 0.100
0.090
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2003 Sep 26 13
Philips Semiconductors Product specification
VHF power MOS transistor BLF346
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor atanyotherconditions above thosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/05/pp14 Date of release: 2003 Sep 26 Document order number: 9397 750 11601
