DATA SH EET
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 28
DISCRETE SEMICONDUCTORS
BFR53
NPN 2 GHz wideband transistor
1997 Oct 28 2
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
FEATURES
•Very low intermodulation distortion
•Very high power gain.
APPLICATIONS
•Thick and thin-film circuits.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 SOT23.
f
page
MSB003
Top view
12
3
Marking code: N1.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter −18 V
VCEO collector-emitter voltage open base −10 V
ICM peak collector current f >1 MHz −100 mA
Ptot total power dissipation Ts≤85 °C−250 mW
Cre feedback capacitance IC= 2 mA; VCE = 5 V; f = 1 MHz;
Tamb =25°C0.9 −pF
fTtransition frequency IC= 25 mA; VCE = 5 V; f = 500 MHz;
Tj=25°C2−GHz
GUM maximum unilateral power gain IC= 30 mA; VCE = 5 V; f = 800 MHz;
Tamb =25°C10.5 −dB
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter −18 V
VCEO collector-emitter voltage open base −10 V
VEBO emitter-base voltage open collector −2.5 V
ICcollector current (DC) −50 mA
ICM peak collector current f >1 MHz −100 mA
Ptot total power dissipation Ts≤85 °C (note 1) −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
1997 Oct 28 3
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and .
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts≤85 °C; note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =10V −−50 nA
hFE DC current gain IC= 25 mA; VCE = 5 V; see Fig.2 25 −−
I
C
= 50 mA; VCE = 5 V; see Fig.2 25 −−
C
ccollector capacitance IE=i
e= 0; VCB = 5 V; f = 1 MHz;
see Fig.3 −0.9 −pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz −1.5 −pF
Cre feedback capacitance IC= 2 mA; VCE = 5 V; f = 1 MHz;
Tamb =25°C−0.9 −pF
fTtransition frequency IC= 25 mA; VCE = 5 V; f = 500 MHz;
see Fig.4 −2−GHz
GUM maximum unilateral power gain
(note 1) IC= 30 mA; VCE = 5 V; f = 800 MHz;
Tamb =25°C; see Fig.5 −10.5 −dB
F noise figure IC= 2 mA; VCE = 5 V; f = 500 MHz;
Tamb =25°C; see Fig.6 −−5dB
G
UM 10 log S21 2
1S
11 2
–
1S
22 2
–
-------------------------------------------------------------- dB
˙
=
1997 Oct 28 4
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
Fig.2 DC current gain as a function of collector
current; typical values.
VCE = 5 V; Tj=25°C.
handbook, halfpage
I (mA)
C
MEA458
0
100
80
60
50 50 100
FE
h
70
90
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
IE=i
e= 0; f = 1 MHz; Tj=25°C.
handbook, halfpage
MEA457
016
2.0
0
1.6
20
1.2
0.4
Cc
(pF)
VCB (V)
4
0.8
812
Fig.4 Transition frequency as a function of
collector current; typical values.
VCE = 5 V; f = 500 MHz; Tj=25°C.
handbook, halfpage
I (mA)
C
MEA459
0
2.2
1.8
1.4
1.0 50
T
f
(GHz)
25
Fig.5 Gain as a function of frequency;
typical values.
IC= 30 mA; VCE = 5 V; Tamb =25°C.
handbook, halfpage
MEA455
0
20
30
102103104
10
f (MHz)
gain
(dB)
I S I
12 2
GUM
1997 Oct 28 5
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
Fig.6 Minimum noise figure as a function of
collector current; typical values.
VCE = 5 V; f = 500 MHz; GS= 20 mS; BS is tuned; Tamb =25°C.
handbook, halfpage
MEA460
0
10
03010 20
F
(dB)
5
40
I (mA)
C
Fig.7 Circles of constant noise figure; typical values.
IC= 2 mA; VCE = 5 V; f = 500 MHz; Tamb =25°C.
handbook, halfpage
02040 80
0
MEA456
60 G (mS)
S
BS
(mS)
100
50
−50
F = 5.5 dB3.3 3.5
4.0 4.5 5.0
1997 Oct 28 6
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
Fig.8 Common emitter input reflection coefficient (S11).
IC= 30 mA; VCE = 5 V; Zo=50Ω; Tamb =25°C.
handbook, full pagewidth
MEA461
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
0.5 800
500 10.2 1052
1000 MHz
100
300 ∞
Fig.9 Common emitter forward transmission coefficient (S21).
IC= 30 mA; VCE = 5 V; Tamb =25°C.
handbook, full pagewidth
ϕ
ϕ
0o
30o
60o
90o
120o
150o
180o
150o
120o
90o60o
30o
MEA463
300
25 15
100
500
1000 MHz
5
1997 Oct 28 7
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
Fig.10 Common emitter reverse transmission coefficient (S12).
IC= 30 mA; VCE = 5 V; Tamb =25°C.
handbook, full pagewidth
MEA464
ϕ
ϕ
0o
30o
60o
90o
120o
150o
180o
150o
120o
90o60o
30o
1000 MHz
0.100.05
100
300
800
0.15
500
Fig.11 Common emitter output reflection coefficient (S22).
IC= 30 mA; VCE = 5 V; Zo=50Ω; Tamb =25°C.
handbook, full pagewidth
MEA462
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j ∞
10.2 10520.5
1000
MHz
500 100
300800
1997 Oct 28 8
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
PACKAGE OUTLINES
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1997 Oct 28 9
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Oct 28 10
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
NOTES
1997 Oct 28 11
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFR53
NOTES
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Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 28 Document order number: 9397 750 02896
