Low-Noise, Low-Distortion
INSTRUMENTATION AMPLIFIER
APPLICATIONS
● PROFESSIONAL MICROPHONE PREAMPS
● MOVING-COIL TRANSDUCER AMPLIFIERS
● DIFFERENTIAL RECEIVERS
● BRIDGE TRANSDUCER AMPLIFIERS
FEATURES
●LOW NOISE: 1nV/√Hz at 1kHz
●LOW THD+N: 0.002% at 1kHz, G = 100
●WIDE BANDWIDTH: 800kHz at G = 100
●WIDE SUPPLY RANGE: ±4.5V to ±18V
●HIGH CMR: > 100dB
●GAIN SET WITH EXTERNAL RESISTOR
●SO-14 SURFACE-MOUNT PACKAGE
DESCRIPTION
The INA163 is a very low-noise, low-distortion, mon-
olithic instrumentation amplifier. Its current-feedback
circuitry achieves very wide bandwidth and excellent
dynamic response over a wide range of gain. It is ideal
for low-level audio signals such as balanced low-
impedance microphones. Many industrial, instrumen-
tation, and medical applications also benefit from its
low noise and wide bandwidth.
Unique distortion cancellation circuitry reduces distor-
tion to extremely low levels, even in high gain. The
INA163 provides near-theoretical noise performance
for 200Ω source impedance. Its differential input, low
noise, and low distortion provide superior performance
in professional microphone amplifier applications.
The INA163’s wide supply voltage, excellent output
voltage swing, and high output current drive allow its
use in high-level audio stages as well.
The INA163 is available in a space-saving SO-14
surface-mount package, specified for operation over
the –40°C to +85°C temperature range.
A1
A2
A3
6kΩ6kΩSense
8
9
10
14 11 6
4
3
12
5
6kΩ6kΩ
VIN−
VIN+
RG
1
VO2
VO1
V+ V−
INA163
G = 1 + 6000
RG
3kΩ
3kΩVO
Ref
INA163
SBOS177D – NOVEMBER 2000 – REVISED MAY 2005
www.ti.com
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 2000–2005, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
INA163
SBOS177D
2www.ti.com
V
O
2
NC
GS2
V+
Ref
V
O
Sense
V
O
1
NC
GS1
V
IN−
V
IN+
V−
NC
NC = No Internal Connection
14
13
12
11
10
9
8
1
2
3
4
5
6
7
PRODUCT PACKAGE-LEAD DESIGNATOR MARKING
INA163UA SO-14 Surface Mount D INA163UA
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this document, or see the TI web site
at www.ti.com.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to ob-
serve proper handling and installation procedures can
cause damage.
ESD damage can range from subtle performance deg-
radation to complete device failure. Precision integrated
circuits may be more susceptible to damage because
very small parametric changes could cause the device
not to meet its published specifications.
Power Supply Voltage ....................................................................... ±18V
Signal Input Terminals, Voltage(2) .................. (V–) – 0.5V to (V+) + 0.5V
Current(2) .................................................... 10mA
Output Short-Circuit to Ground ............................................... Continuous
Operating Temperature ..................................................–55°C to +125°C
Storage Temperature .....................................................–55°C to +125°C
Junction Temperature.................................................................... +150°C
Lead Temperature (soldering, 10s)............................................... +300°C
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals
that can swing more than 0.5V beyond the supply rails should be current
limited to 10mA or less.
ABSOLUTE MAXIMUM RATINGS(1)
PACKAGE/ORDERING INFORMATION(1)
PIN CONFIGURATION
Top View
INA163
SBOS177D 3
www.ti.com
INA163UA
PARAMETER CONDITIONS MIN TYP MAX UNITS
GAIN
Range 1 to 10000 V/V
Gain Equation(1) G = 1 + 6k/RG
Gain Error, G = 1 ±0.1 ±0.25 %
G = 10 ±0.2 ±0.7 %
G = 100 ±0.2 %
G = 1000 ±0.5 %
Gain Temp Drift Coefficient, G = 1 ±1±10 ppm/°C
G > 10 ±25 ±100 ppm/°C
Nonlinearity, G = 1 ±0.0003 % of FS
G = 100 ±0.0006 % of FS
INPUT STAGE NOISE
Voltage Noise RSOURCE = 0Ω
fO = 1kHz 1nV/√Hz
fO = 100Hz 1.2 nV/√Hz
fO = 10Hz 2nV/√Hz
Current Noise
fO = 1kHz 0.8 pA/√Hz
OUTPUT STAGE NOISE
Voltage Noise, fO = 1kHz 60 nV/√Hz
INPUT OFFSET VOLTAGE
Input Offset Voltage VCM = VOUT = 0V 50 + 2000/G 250 + 5000/G µV
vs Temperature TA = TMIN to TMAX 1 + 20/G µV/°C
vs Power Supply VS = ±4.5V to ±18V 1 + 50/G 3 + 200/G µV/V
INPUT VOLTAGE RANGE
Common-Mode Voltage Range VIN+ – VIN– = 0V (V+) – 4 (V+) – 3V
VIN+ – VIN– = 0V (V–) + 4 (V–) + 3 V
Common-Mode Rejection, G = 1 VCM = ±11V, RSRC = 0Ω70 80 dB
G = 100 100 116 dB
INPUT BIAS CURRENT
Initial Bias Current 212µA
vs Temperature 10 nA/°C
Initial Offset Current 0.1 1 µA
vs Temperature 0.5 nA/°C
INPUT IMPEDANCE Differential 60 2MΩ pF
Common-Mode 60 2MΩ pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB, G = 1 3.4
G = 100 800 kHz
Slew Rate 15 V/µs
THD+Noise, f = 1kHz G = 100 0.002 %
Settling Time, 0.1% G = 100, 10V Step 2 µs
0.01% G = 100, 10V Step 3.5 µs
Overload Recovery 50% Overdrive 1 µs
OUTPUT
Voltage RL = 2kΩ to Gnd (V+) – 2 (V+) – 1.8 V
(V–) + 2 (V–) + 1.8 V
Load Capacitance Stability 1000 pF
Short-Circuit Current Continuous-to-Common ±60 mA
POWER SUPPLY
Rated Voltage ±15 V
Voltage Range ±4.5 ±18 V
Current, Quiescent IO = 0mA ±10 ±12 mA
TEMPERATURE RANGE
Specification –40 +85 °C
Operating –40 +125 °C
θ
JA 100 °C/W
NOTE: (1) Gain accuracy is a function of external RG.
ELECTRICAL CHARACTERISTICS: VS = ±15V
TA = +25°C and at rated supplies, VS = ±15V, RL = 2kΩ connected to ground, unless otherwise noted.
INA163
SBOS177D
4www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = 5V, VCM = 1/2 VS, RL = 25kΩ, CL = 50pF, unless otherwise noted.
GAIN vs FREQUENCY
Gain (dB)
70
60
50
40
30
20
10
0
−10
−20
Frequency (Hz)
10k 100k 1M 10M
G = 1000
G = 100
G = 10
G = 1
NOISE VOLTAGE (RTI) vs FREQUENCY
Frequency (Hz)
10 100 1k 10k
1k
100
10
1
G = 500 G = 1000
G = 100
G = 10
G = 1
Noise (RTI) (nV/√Hz)
CURRENT NOISE SPECTRAL DENSITY
10
1 10 100 1k 10k
Frequency (Hz)
0.1
1
Current Noise Density (pA/√Hz)
COMMON- MODE REJECTION vs FREQUENCY
Input Referred CMR (dB)
140
120
100
80
60
40
20
0
Frequency (Hz)
10 1M100 1k 10k 100k
G = 1000
G = 100
G = 10
G = 1
POWER-SUPPLY REJECTION vs FREQUENCY
Power-Supply Rejection (dB)
140
120
100
80
60
40
20
0
Frequency (Hz)
11M10 100 1k 10k 100k
G = 10
G = 100, 1000
G = 1
0.1
0.01
0.001
0.0001
THD+N (%)
THD+N vs FREQUENCY
Frequency (Hz)
20 100 1k 10k 20k
V
O
= 5Vrms
R
L
= 10kΩ
G = 10
G = 1
G = 100
G = 1000
INA163
SBOS177D 5
www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, VS = 5V, VCM = 1/2 VS, RL = 25kΩ, CL = 50pF, unless otherwise noted.
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 1)
20mV/div
2.5µs/div
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
V+
(V+) − 2
(V+) − 4
(V+) − 6
(V−) + 6
(V−) + 4
(V−) + 2
V−0 102030405060
Output Current (mA)
Output Voltage to Rail (V)
SETTLING TIME vs GAIN
Settling Time (µs)
Gain
1 10 100 1000
10
8
6
4
2
0
20V Step
0.01%
0.1%
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 100)
20mV/div
10µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 1)
5V/div
2.5µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 100)
5V/div
2.5µs/div
INA163
SBOS177D
6www.ti.com
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for
operation. Power supplies should be bypassed with
0.1µF tantalum capacitors near the device pins. The
output Sense (pin 8) and output Reference (pin 10)
should be low-impedance connections. Resistance of
a few ohms in series with these connections will
degrade the common-mode rejection of the INA163.
GAIN-SET RESISTOR
Gain is set with an external resistor, RG, as shown in
Figure 1. The two internal 3kΩ feedback resistors are
laser-trimmed to 3kΩ within approximately ±0.2%. Gain
is:
GR
G
=+16000
The temperature coefficient of the internal 3kΩ resis-
tors is approximately ±25ppm/°C. Accuracy and TCR
of the external RG will also contribute to gain error and
FIGURE 1. Basic Circuit Connections.
temperature drift. These effects can be inferred from
the gain equation. Make a short, direct connection to
the gain set resistor, RG. Avoid running output signals
near these sensitive input nodes.
NOISE PERFORMANCE
The INA163 provides very low-noise with low-source
impedance. Its 1nV/√Hz voltage noise delivers near-
theoretical noise performance with a source imped-
ance of 200Ω. The input stage design used to achieve
this low noise, results in relatively high input bias
current and input bias current noise. As a result, the
INA163 may not provide the best noise performance
with a source impedance greater than 10kΩ. For source
impedance greater than 10kΩ, other instrumentation
amplifiers may provide improved noise performance.
A1
A2
A3
6kΩ6kΩSense
8
9
10
14 6
111
4
3
12
5
6kΩ6kΩ
VIN−
VIN+
RG
V+
V−V+
V−
INA163
G = 1 + 6000
RG
3kΩ
3kΩVO
VO
Sometimes Shown in
Simplified Form:
NOTE: (1) NC = No Connection.
Ref
0.1µF
0.1µF
RGINA163
GAIN RG
(V/V) (dB) ( Ω )
10NC
(1)
2 6 6000
5 14 1500
10 20 667
20 26 316
50 34 122
100 40 61
200 46 30
500 54 12
1000 60 6
2000 66 3
INA163
SBOS177D 7
www.ti.com
FIGURE 3. Offset Voltage Adjustment Circuit.
FIGURE 2. Input Stabilization Network.
V+
V−
V
O
8
4
3
12
5
11
610 9
V
IN−
V
IN+
INA163
47Ω
47Ω
1.2µH
1.2µH
INPUT CONSIDERATIONS
Very low source impedance (less than 10Ω) can cause
the INA163 to oscillate. This depends on circuit layout,
signal source, and input cable characteristics. An input
network consisting of a small inductor and resistor, as
shown in Figure 2, can greatly reduce any tendency to
oscillate. This is especially useful if a variety of input
sources are to be connected to the INA163. Although
not shown in other figures, this network can be used as
needed with all applications shown.
INA163
V+
V−
VOV+
150Ω
10kΩ150Ω
100µA
100µA
8
4
3
12
RG
510
11
6
9
V−
OPA237
+15V
−15V
V
O
±250mA
Output Drive
BW
BUF634 connected
for wide bandwidth.
8
11
6
4
510 9
INA163 BUF634
Sense
FIGURE 4. Buffer for Increase Output Current.
OFFSET VOLTAGE TRIM
A variable voltage applied to pin 10, as shown in
Figure 3, can be used to adjust the output offset voltage.
A voltage applied to pin 10 is summed with the output
signal. An op amp connected as a buffer is used to
provide a low impedance at pin 10 to assure good
common-mode rejection.
OUTPUT SENSE
An output sense terminal allows greater gain accuracy
in driving the load. By connecting the sense connection
at the load, I • R voltage loss to the load is included
inside the feedback loop. Current drive can be in-
creased by connecting a buffer amp inside the feed-
back loop, as shown in Figure 4.
INA163
SBOS177D
8www.ti.com
R
5
2.2k
R
6(2)
5
R
7(3)
1k
A
1
INA163
+47 F
R
3
47k
R
2
6.8k
R
1
6.8k
Phantom Power
+48V
+
+
R
4
2.2k
C
1(1)
47 F60V
C
2(1)
47 F 60V
A2
OPA134
0.1 F
+15V
0.1 F
0.1 F1M
V
O
15V
Optional DC
Output Control Loop
89
10
1
2
3
Female XLR
Connector
NOTES: (1) Use non-polar capacitors if phantom
power is to be turned off. (2) R
6
sets maximum gain.
(3) R
7
sets minimum gain.
1N4148
15V
1N4148
FIGURE 5. Phantom-Powered Microphone Preamplifier.
MICROPHONE AMPLIFIER
Figure 5 shows a typical circuit for a professional
microphone input amplifier. R1 and R2 provide a cur-
rent path for conventional 48V phantom power source
for a remotely located microphone. An optional switch
allows phantom power to be disabled. C1 and C2 block
the phantom power voltage from the INA163 input
circuitry. Non-polarized capacitors should be used for
C1 and C2 if phantom power is to be disabled. For
additional input protection against ESD and hot-plug-
ging, four INA4148 diodes may be connected from the
input to supply lines.
R4 and R5 provide a path for input bias current of the
INA163. Input offset current (typically 100nA) creates a
DC differential input voltage that will produce an output
offset voltage. This is generally the dominant source of
output offset voltage in this application. With a maxi-
mum gain of 1000 (60dB), the output offset voltage can
be several volts. This may be entirely acceptable if the
output is AC-coupled into the subsequent stage. An
alternate technique is shown in Figure 5. An inexpen-
sive FET-input op amp in a feedback loop drives the
DC output voltage to 0V. A2 is not in the audio signal
path and does not affect signal quality.
Gain is set with a variable resistor, R7, in series with
R6. R6 determines the maximum gain. The total resis-
tance, R6 + R7, determines the lowest gain. A special
reverse-log taper potentiometer for R7 can be used to
create a linear change (in dB) with rotation.
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
INA163UA ACTIVE SOIC D 14 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
INA163UA/2K5 ACTIVE SOIC D 14 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
INA163UA/2K5E4 ACTIVE SOIC D 14 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
INA163UAE4 ACTIVE SOIC D 14 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-3-260C-168 HR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 16-Feb-2009
Addendum-Page 1
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
INA163UA/2K5 SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA163UA/2K5 SOIC D 14 2500 367.0 367.0 38.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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