2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Publication Order Number:
NDS7002A/D
© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Features
High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
Ordering Information
Part Number Marking Package Packing Method Min Order Qty /
Immediate Pack
Qty
2N7000 2N7000 TO-92 3L Bulk 10000 / 1000
2N7000-D74Z 2N7000 TO-92 3L Ammo 2000 / 2000
2N7000-D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7000-D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000
NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000
Description
These N-channel enhancement mode field effect transis-
tors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while providing rugged, reliable, and fast
switching performance. They can be used in most
applications requiring up to 400 mA DC and can deliver
pulsed currents up to 2 A. These products are
particularly suited for low-voltage, low-cur-rent
applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
1. Source 2. Gate 3. Drain
TO-92
1
2N7002/NDS7002A
S
D
G
SOT-23
(TO-236AB)
S
D
G
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Value Unit
2N7000 2N7002 NDS7002A
VDSS Drain-to-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS 1 M 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40
ID Maximum Drain Current - Continuous 200 115 280 mA
Maximum Drain Current - Pulsed 500 800 1500
PD Maximum Power Dissipation Derated above 25°C 400 200 300 mW
3.2 1.6 2.4 mW/°C
TJ, TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes,
1/16-inch from Case for 10 Seconds 300 °C
Symbol Parameter Value Unit
2N7000 2N7002 NDS7002A
RJA Thermal Resistance, Junction to Ambient 312.5 625 417 °C/W
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Off Characteristic s
BVDSS
Drain-Source Breakdown
Voltage VGS = 0 V, ID = 10 AAll 60 V
IDSS Zero Gate Voltage Drain
Current
VDS = 48 V, VGS = 0 V 2N7000 1 A
VDS = 48 V, VGS = 0 V,
TC = 125°C
1mA
VDS = 60 V, VGS = 0 V 2N7002
NDS7002A
1A
VDS = 60 V, VGS = 0 V,
TC = 125°C
0.5 mA
IGSSF Gate - Body Leakage,
Forward
VGS = 15 V, VDS = 0 V 2N7000 10 nA
VGS = 20 V, VDS = 0 V 2N7002
NDS7002A 100 nA
IGSSR Gate - Body Leakage,
Reverse
VGS = -15 V, VDS = 0 V 2N7000 -10 nA
VGS = -20 V, VDS = 0 V 2N7002
NDS7002A -100 nA
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V
VDS = VGS, ID = 250 A2N7002
NDS7002A 12.12.5
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 500 mA
2N7000 1.2 5
VGS = 10 V,
ID = 500 mA, TC = 125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V,
ID = 500 mA
2N7002 1.2 7.5
VGS = 10 V,
ID = 500 mA, TC = 100°C 1.7 13.5
VGS = 5 V,
ID = 50 mA 1.7 7.5
VGS = 5 V,
ID = 50 mA, TC = 100°C 2.4 13.5
VGS = 10 V,
ID = 500 mA
NDS7002A 1.2 2
VGS = 10 V,
ID = 500 mA, TC = 125°C 23.5
VGS = 5 V,
ID = 50 mA 1.7 3
VGS = 5 V,
ID = 50 mA, TC = 125°C 2.8 5
VDS(ON) Drain-Source On-Voltage VGS = 10 V,
ID = 500 mA
2N7000 0.6 2.5 V
VGS = 4.5 V,
ID = 75 mA 0.14 0.4
VGS = 10 V,
ID = 500 mA
2N7002 0.6 3.75
VGS = 5.0 V,
ID = 50 mA 0.09 1.5
VGS = 10 V,
ID = 500 mA
NDS7002A 0.6 1
VGS = 5.0 V,
ID = 50 mA 0.09 0.15
ID(ON) On-State Drain Current VGS = 4.5 V,
VDS = 10 V
2N7000 75 600 mA
VGS = 10 V,
VDS 2 VDS(on)
2N7002 500 2700
VGS = 10 V,
VDS 2 VDS(on)
NDS7002A 500 2700
gFS Forward
Transconductance
VDS= 10 V,
ID = 200 mA
2N7000 100 320 mS
VDS 2VDS(ON),
ID = 200 mA
2N7002 80 320
VDS 2VDS(ON),
ID = 200 mA
NDS7002A 80 320
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Note:
1. Pulse test : Pulse Width 300 μs, Duty Cycel 2 %.
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All 20 50 pF
Coss Output Capacitance All 11 25
Crss Reverse Transfer
Capacitance All 4 5
ton Turn-On Time VDD = 15 V, RL = 25 ,
ID = 500 mA,
VGS= 10 V, RGEN = 25
2N7000
10
ns
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS= 10 V,
RGEN = 25
2N7002
NDS7002A 20
toff Turn-Off Time VDD = 15 V, RL = 25 ,
ID = 500 mA, VGS= 10 V,
RGEN = 25
2N7000
10
ns
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS= 10 V,
RGEN = 25
2N7002
NDS7002A 20
Drain-Source Diode Characterist ics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward
Current
2N7002 115 mA
NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward
Current
2N7002 0.8 A
NDS7002A 1.5
VSD Drain-Source Diode
Forward Voltage
VGS = 0 V,
IS = 115 mA(1)
2N7002 0.88 1.5 V
VGS = 0 V,
IS = 400 mA(1)
NDS7002A 0.88 1.2
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
2N7000 / 2N7002 / NDS7002A
01 45
0
0.5
1
1.5
2
V
23
, DRAIN-SOURCE VOLTAGE (V
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
= 10VVGS
VDS
D
5.0
6.0
-50 -25 0 25 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
J
VGS
= 10V
D
I = 500mA
-50 -25 0 25 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERAT URE (°C)
th
V , N250$/,=(D
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D
I = 1 mA
DS
V = VGS
0 0 .4 0 .8 1 .2 1 .6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
GS
V =4.0V
D
7.0
4.5
10
5.0
6.0
9.0
8.0
0 0.4 0.8 1.2 1.6 2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
J
T = 125°C
25°C
-55°C
D
V V V
GS
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
02 810
0
0.4
0.8
1.2
1.6
2
46
, GATE TO SOURCE VOLTAGE (VVV
VV = 109
DS
GS
J
T = -55°C 25°C
125°C
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continued)
2N7000 / 2N7002 / NDS7002A
-50 -25 0 25 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEM PERATURE (°C)
BV'66 NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
D
I = 250µA
0.2 0.41.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V
0.6 0 .8 1 1.2
, BODY DIODE FORWA RD VOLTAGE (V)
S
I , REVERSE DRAIN CURRENT (A)
VV GS
 9
J
T = 125°C
VSD
25°C
-55°C
00.4 1 .6 2
0
2
4
6
8
10
0.81.2
g
Q , *ATE CHARGE (nC)
V , GA E-SOURCE VOLTAGE (V)VGS
D
I =500mA
DS
V = 25V
115mA
280mA
123 3050
1
2
5
10
20
40
60
51020
VVDS , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Ciss
f = 1 MHz
GS
V = 0V
CC oss
Crss
G
D
S
VDD
RL
V
V
IN
OUT
VGS
DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature
Figure 8. Body Diode Forward Voltage Variation with
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11.6ZLWFKLQJ7HVW&LUFXLW Figure 12. Switching Waveforms
0..
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continued)
0.0001 0.10.001 0.01 1 10 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
1
t , TIME (sec)
r(t), NORMALIZED EFFECTIVETRANSIENT
THERMAL RESISTANCE
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0.01
0.02
0.05
0.1
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0.5
1
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r(t), NORMALIZED EFFECTIVETRANSIENT
THERMAL RESISTANCE
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Safe Operating Area
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7
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