BAS70-07
®
June 1999 - Ed: 2A
SMALL SIGNAL SCHOTTKY DIODE
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FO RWA RD V OLTAG E D RO P
LOW THE RM AL RE SISTA NCE
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
FEAT URES AND BENE FITS
Low turn-on and high breakdown voltage diodes
intended for
ultrafast switching and UHF detectors in hybrid mi -
cro circuits. Packaged in SOT-143, this device is
intended for surface mounting. Its dual inde-
pendent diodes configuration makes it very inter-
esting for applications where high integration is
searched.
DESCRIPTION
SOT-143
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 70 V
IFContinuous forward current 15 mA
IFSM S urge non repetitive forward current tp = 10ms 1 A
Ptot Power Dissipation (note 1) Tamb = 25° C 310 mW
Tstg Storage temperature range - 65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
TL Maximum temperature for soldering during 10s 260 °C
Note 1: Ptot is the total dissipation of both diodes.
ABSOLUTE RATINGS ( limiting v alues)
K1
K2
A1
A2
K1
A1
K2
A2
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient (*) 400 °C/W
(*) Mounted on epoxy board with recommended pad layout.
THERMA L RESISTANCE
* :
dPtot
dTj
< 1
Rth
(
j
−
a
) thermal runaway condition for a diode on its own heatsink
1/4
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
VF * Forward voltage drop Tj = 25°CI
F
= 1 mA 410 m V
IF = 10 mA 750 m V
IF = 15 mA 1 V
VBR Breakdown voltage Tj = 25°CI
R
= 10 µA70 V
I
R
** Reverse leakage current Tj = 25°CV
R
= 50 V 200 nA
VR = 70 V 10 µA
STAT IC ELECTRICAL CHARACTE RISTICS
Symbol Parameters Tests Conditions M in. Typ. Max. Unit
C Junction capacitance VR = 1 V F = 1 MHz 2 pF
trr Reverse recovery ti me IF = 10 mA Irr = 1 mA
IR = 10 mA R
L
= 100 Ω5ns
τ
Effective c arrier lif etime IF = 5 mA Krakauer method 100 ps
DYNAM IC CHA RACTERISTICS (Tj = 25 ° C)
0 1020304050607080
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18 PF(av)(W)
IF(av) (mA)
δ= 0.2 δ= 0.5
δ= 1
δ= 0.05
δ= 0.1
T
δ
=tp/T tp
Fig.1 : Average forward power dissipation versus
average forward c urrent.
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80 IF(mA)
Tamb(°C)
Fig.2 : Continuous forward current versus ambient
temperature.
Pulse test: * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
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1E-3 1E-2 1E-1 1E+0
0.00
0.05
0.10
0.15
0.20
0.25
0.30 IM(A)
Ta=50°C
Ta=25°C
Ta=100°C
t(s)
I
M
t
δ
=0.5
Fig.3 : Non repetitive surge peak forward current
versus overload duration (maximum v alues).
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
1E-3
1E-2
1E-1
1E+0
1E+1 IR(µA)
Tj=25°C
Tj=100°C
VR(V)
Fig.5 : Reverse leakage current versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
0.01
0.10
1.00 Zth(j-a)/Rth(j-a)
tp(s)
T
δ
=tp/T tp
δ= 0.1
δ= 0.2
δ= 0.5
Single pulse
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
0 25 50 75 100 125
1E-2
1E-1
1E+0
1E+1
1E+2 IR(µA)
VR=70V
Tj(°C)
Fig.6 : Reverse leakage current versus junction
tempe ratur e (typical val ue s).
1 10 100
0.1
1.0
2.0
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig.7 : Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1E-4
1E-3
1E-2
7E-2 IFM(A)
Tj=100°C
Typical values
Tj=25°C
Maximum values
Tj=25°C
Typical values
VFM(V)
Fig.8 : Forward voltage drop versus forward
current.
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© 1999 STMicroelectroni cs - Printed i n Italy - All rights rese rved.
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PACKAGE M E CHANI CAL DATA
SOT-143
A
L
C
D
E
H
e2 b
b1
e1
A1
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 0.8 1.2 0.0314 0.0472
A1 0.01 0.127 0.0004 0.005
b 0.35 0.6 0.014 0.024
b1 0.55 0.95 0.022 0.037
C 0.085 0.2 0.003 0.008
D 2.8 3.04 0.11 0.12
E 1.2 1.4 0.047 0.055
e1 1.90 Typ. 0.075 Typ.
e2 0.2 Typ. 0.008 Typ.
H 2.1 2.64 0.083 0.103
L 0.55 Typ. 0.022 Typ.
FOOTPRINT DIMENSIONS (millimeters)
Type Marking Package Weight Base qty Delivery mode
BAS70-07 D99 SOT -143 0.01g. 3000 Tape & reel
MARKING
1.92
0.95
2.25
1.1 0.65
0.2
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